基于ADS下FBAR的设计与仿真
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摘要
现代无线通信技术推进了高频元件的相关发展,微纳技术的迅速发展和新型功能材料的出现以及压电薄膜制备技术的日益成熟使高性能频率控制器件的微型化成为可能。本文主要通过对FBAR的结构以及原理做介绍,设计出一款上下0.3 um厚的钼材料电极,1 um ALN压电薄膜和2.5 um的二氧化硅衬底的空气隙型薄膜体声波谐振器,采用MBVD模型对其进行理论推导,并在ADS软件下搭建电路仿真,得到S参数曲线,进而算出有效机电耦合系数为3.65%、串、并联谐振因子分别为1579.33和555.02,有效机电耦合系数与品质因数Q值得乘积最高可以达到57.65。数据表明该FBAR性能较好,其带宽较大,插入损耗较低,达到了FBAR设计的标准。
Modern wireless communication technology has promoted the development of high-frequency components. The rapid development of micro-nano technology and the emergence of new functional materials and the maturity of piezoelectric film preparation technology have made it possible to miniaturize high-performance frequency control devices. This paper mainly introduces the structure and principle of FBAR, and designs an air-gap film bulk acoustic resonator with 0.3 μm thick molybdenum material electrode, 1 um ALN piezoelectric film and2.5 um silicon dioxide substrate, using MBVD. The model is theoretically deduced, and the circuit simulation is built under ADS software to obtain the S-parameter curve. Then the effective electromechanical coupling coefficient is calculated to be 3.65%, the series and parallel resonance factors are 1575.33 and 555.02, respectively. The effective electromechanical coupling coefficient and quality factor Q The product worthworthy can reach 57.65. The data shows that the FBAR has better performance, its bandwidth is larger, and the insertion loss is lower, reaching the standard of FBAR design.
Modern wireless communication technology has promoted the development of high-frequency components. The rapid development of micro-nano technology and the emergence of new functional materials and the maturity of piezoelectric film preparation technology have made it possible to miniaturize high-performance frequency control devices. This paper mainly introduces the structure and principle of FBAR, and designs an air-gap film bulk acoustic resonator with 0.3 μm thick molybdenum material electrode, 1 um ALN piezoelectric film and2.5 um silicon dioxide substrate, using MBVD. The model is theoretically deduced, and the circuit simulation is built under ADS software to obtain the S-parameter curve. Then the effective electromechanical coupling coefficient is calculated to be 3.65%, the series and parallel resonance factors are 1575.33 and 555.02, respectively. The effective electromechanical coupling coefficient and quality factor Q The product worthworthy can reach 57.65. The data shows that the FBAR has better performance, its bandwidth is larger, and the insertion loss is lower, reaching the standard of FBAR design.
引文
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[2]K.M.Lakin.“Thin Film Resonator Technology”[C].Proceedings of the 2003IEEE Int.Freq.Cont.Sym.and PDAE-xhibition Jointly with the 17th Euro.Freq.and Time Forum.2003.
[3]李丽,郑升灵,王胜福,李丰,李宏军.高性能AlN薄膜体声波谐振器的研究[J].半导体器件,2013.06.
[4]汤亮,郝震宏,乔东海.薄膜体声波谐振器(FBAR)谐振特性的模拟分析[C].中国科学院声学研究所微机电实验室,北京,2006.10.
[5]赵丽坤,高杨,韩超.FBAR有效机电耦合系数的影响因素分析[J].压电与声光,2017.02.
[6]K.M.Lakin“Review of The Thin Film Resonator Technology”[C],Proc.of RAWCON,2003.
[7]Richard C.Ruby,Yogesh Desai,Donald R.Bradbury.“SBARstructure and method of fabric cation of SBAR FBAR film processing techniques for the manufacturing of SBAR/FBARfilter”[P].US patent,US 6060818.2000.5.
[8]吴勇.新型薄膜体声波谐振器(FBAR)技术研究[D].浙江:浙江大学,2017.
[9]于小利.薄膜体声波谐振器的时域有限差分模拟[D].南京:南京大学,2012.
[10]Larson lii,J.D.,etal.Modified Butterworth-Van Dyke circuit for FBAR resonatorsand automated measurement system.in Proc.2000 IEEE Ultrasonic Symposium.2000.San Juan.p.863.868.
[11]贾乐,高杨,韩超.体声波谐振器MASON模型改进的方法[J].压电与声光,2018.03.