基于关断电流最大变化率的压接式IGBT模块结温提取方法
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摘要
压接式绝缘栅极双极性晶体管(IGBT)模块因优越的电气性能和封装设计,受到柔性直流输电等大功率应用场合的青睐,其模块可靠性也成为大功率应用场合研究的重点,而IGBT模块结温是影响器件可靠性的重要因素。基于压接式IGBT模块双脉冲测试平台,介绍一种基于关断电流最大变化率的压接式IGBT模块结温提取方法,分析压接式IGBT芯片结温和模块关断电流最大变化率间单调变化关系,并利用压接式IGBT模块封装结构固有的寄生电感有效获取关断电流最大变化率的信息,以此来反推模块结温特性。最后通过压接式IGBT双脉冲测试平台验证了通过模块关断电流最大变化率进行压接式IGBT结温提取的可行性。
Press-pack insulated gate bipolar transistor(IGBT) modules are characterized by advanced electric property and package design,which draws much attention from high power application such as voltage-source-converter based high-voltage-direct-current(VSC-HVDC) transmission.The reliability of IGBT modules becomes the research focus for power devices in high power application and junction temperature monitoring is closely relative to reliability analysis.Based on press-pack IGBT double-pulse test platform,this paper introduced a junction temperature extraction method with maximum collector current falling rate(diC/dt)max.And the inherent monotonic relationship between IGBT chip temperature and maximum collector current falling rate was explored.Considering the package features of press-pack IGBT modules,the intrinsic parasitic inductance within module was utilized to obtain maximum collector current falling rate and the temperature characteristics was deduced as well.Finally the experimental verification was performed by the press-pack IGBT double-pulse test platform to confirm the feasibility of proposed junction temperature extraction method with maximum collector current falling rate.
Press-pack insulated gate bipolar transistor(IGBT) modules are characterized by advanced electric property and package design,which draws much attention from high power application such as voltage-source-converter based high-voltage-direct-current(VSC-HVDC) transmission.The reliability of IGBT modules becomes the research focus for power devices in high power application and junction temperature monitoring is closely relative to reliability analysis.Based on press-pack IGBT double-pulse test platform,this paper introduced a junction temperature extraction method with maximum collector current falling rate(diC/dt)max.And the inherent monotonic relationship between IGBT chip temperature and maximum collector current falling rate was explored.Considering the package features of press-pack IGBT modules,the intrinsic parasitic inductance within module was utilized to obtain maximum collector current falling rate and the temperature characteristics was deduced as well.Finally the experimental verification was performed by the press-pack IGBT double-pulse test platform to confirm the feasibility of proposed junction temperature extraction method with maximum collector current falling rate.
引文
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[16]Storasta L,Kopta A,Feller L,et al.4500V IGBT Hi Pak module rated at 1200 A,a new milestone with SPT+technology[C]//Proceedings of the Power Conversion and Intelligent Motion Conference,Nümberg,Germany,2009:420-424.
[17]Pfaffenlehner M,Biermann J,Schaeffer C,et al.New3300V chip generation with a trench IGBT and an optimized field stop concept with a smooth switching behavior[C]//Proceedings of the 6th International Symposium on Power Semiconductor Devices and ICs,2004:107-110.
[18]Baliga B J.Fundamentals of power semiconductor devices[M].New York:Springer Verlag,2008.
[19]孙鹏飞,罗皓泽,董玉斐,等.基于关断延迟时间的大功率IGBT模块结温提取方法研究[J].中国电机工程学报,2015,35(13):3366-3372.Sun Pengfei,Luo Haoze,Dong Yufei,et al.Junction temperature extraction of high power IGBT module based on turn-off delay time[J].Proceedings of the CSEE,2015,35(13):3366-3372.
[20]Kraus R,Hoffmann K.An analytical model of IGBTs with low emitter efficiency[C]//Proceedings of the5th International Symposium on Power Semiconductor Devices and ICs,1993:30-34.
[21]Schumann J,Eckel H G.Charge carrier extraction IGBT model for circuit simulators[C]//2012 15th International IEEE Power Electronics and Motion Control Conference(EPE/PEMC),Novi Sad,2012:1-7.
[22]Baliga B J.Advanced High voltage power device concepts[M].New York:Springer,2012.
[23]Khanna V.Insulated gate bipolar transistor IGBT theory and design[M].Wiley-IEEE Press,2003.
[2]温家良,葛俊,潘艳,等.直流电网用电力电子器件发展与展望[J].电网技术,2016,40(3):663-669.Pan Jialiang,Ge Jun,Pan Yan,et al.Development and expectation of power electronic devices for DC grid[J].Power System Technology,2016,40(3):663-669.
[3]赵东元,刘江.压接式IGBT在电力系统应用特性分析[J].电力电子技术,2015,49(12):46-48.Zhao Dongyuan,Liu Jiang.Application analysis of the press-pack IGBT in the power electronic field[J].Power Electronics,2015,49(12):46-48.
[4]窦泽春,Rupert Stevens,忻兰苑,等.新型压接式IGBT模块的结构设计与特性分析[J].机车电传动,2016(1):10-13.Dou Zechun,Rupert Stevens,Xin Lanyuan,et al.Design and characteristic analyss of novel presscontact IGBT module[J].Electric Drive for Locomotives,2016(1):10-13.
[5]邓二平,赵志斌,张朋,等.压接型IGBT器件内部压力分布[J].电工技术学报,2017,32(6):201-208.Deng Erping,Zhao Zhibing,Zhang Peng,et al.Clamping force distribution within press pack IGBTs[J].Transactions of China Electrotechnical Society,2017,32(6):201-208.
[6]李辉,刘盛权,冉立,等.大功率并网风电机组变流器状态监测技术综述[J].电工技术学报,2016,31(8):1-10.Li Hui,Liu Shengquan,Ran Li,et al.Overview of condition monitoring technologies of power converter for high power grid-connected wind turbine generator system[J].Transactions of China Electrotechnical Society,2016,31(8):1-10.
[7]Choi U M,Blaabjerg F,Lee K B.Study and handling methods of power IGBT module failures in power electronic converter systems[J].IEEE Transactions on Power Electronics,2015,30(5):2517-2533.
[8]赖伟,陈民铀,冉立,等.老化实验条件下的IGBT寿命预测模型[J].电工技术学报,2016,31(24):173-180.Lai Wei,Chen Minyou,Ran Li,et al.IGBT lifetime model based on aging experiment[J].Transactions of China Electrotechnical Society,2016,31(24):173-180.
[9]Fabis P M,Shum D,Windischmann H.Thermal modeling of diamond-based power electronics packaging[C]//Fifteenth IEEE Semiconductor Thermal Measurement and Management Symposium,1999:98-104.
[10]Sundaramoorthy V K,Bianda E,Bloch R,et al.Simultaneous online estimation of junction temperature and current of IGBTs using emitterauxiliary emitter parasitic inductance[C]//International Exhibition and Conference for Power Electronics,Intelligent Motion,Renewable Energy and Energy Management,2014:1-8.
[11]Luo H,Li W,He X.Online high-power P-i-N diode chip temperature extraction and prediction method with maximum recovery current di/dt[J].IEEE Transactions on Power Electronics,2015,30(5):2395-2404.
[12]Perpi?àX,Serviere J F,Saiz J,et al.Temperature measurement on series resistance and devices in power packs based on on-state voltage drop monitoring at high current[J].Microelectronics Reliability,2006,46(9):1834-1839.
[13]Xiang D,Ran L,Tavner P,et al.Condition monitoring power module solder fatigue using inverter harmonic identification[J].IEEE Transactions on Power Electronics,2012,27(1):235-247.
[14]Wang Zhiqiang,Shi Xiaojie,Tolbert Leon M,et al.A di/dt feedback based active gate driver for smart switching and fast overcurrent protection of IGBT modules[J].IEEE Transactions on Power Electronics.2014,29(7):3720-3732.
[15]Dugal F,Tsyplakov E,Baschnagel A,et al.IGBT press-packs for the industrial market[C]//International Exhibition and Conference for Power Electronics,Intelligent Motion,Renewable Energy and Energy Management,2012:1-8.
[16]Storasta L,Kopta A,Feller L,et al.4500V IGBT Hi Pak module rated at 1200 A,a new milestone with SPT+technology[C]//Proceedings of the Power Conversion and Intelligent Motion Conference,Nümberg,Germany,2009:420-424.
[17]Pfaffenlehner M,Biermann J,Schaeffer C,et al.New3300V chip generation with a trench IGBT and an optimized field stop concept with a smooth switching behavior[C]//Proceedings of the 6th International Symposium on Power Semiconductor Devices and ICs,2004:107-110.
[18]Baliga B J.Fundamentals of power semiconductor devices[M].New York:Springer Verlag,2008.
[19]孙鹏飞,罗皓泽,董玉斐,等.基于关断延迟时间的大功率IGBT模块结温提取方法研究[J].中国电机工程学报,2015,35(13):3366-3372.Sun Pengfei,Luo Haoze,Dong Yufei,et al.Junction temperature extraction of high power IGBT module based on turn-off delay time[J].Proceedings of the CSEE,2015,35(13):3366-3372.
[20]Kraus R,Hoffmann K.An analytical model of IGBTs with low emitter efficiency[C]//Proceedings of the5th International Symposium on Power Semiconductor Devices and ICs,1993:30-34.
[21]Schumann J,Eckel H G.Charge carrier extraction IGBT model for circuit simulators[C]//2012 15th International IEEE Power Electronics and Motion Control Conference(EPE/PEMC),Novi Sad,2012:1-7.
[22]Baliga B J.Advanced High voltage power device concepts[M].New York:Springer,2012.
[23]Khanna V.Insulated gate bipolar transistor IGBT theory and design[M].Wiley-IEEE Press,2003.