一款全CMOS结构低功耗亚阈带隙基准源
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摘要
基于CSMC 0.18μm工艺,设计了一款全CMOS结构的带隙基准源电路。电路正常工作时,所有MOS管均处于亚阈工作状态,从而保证了整个带隙基准电路芯片具有极低的功耗。在电压输出方面,通过分压降低负温度系数(CTAT)电压同时降低相应的正温度系数(PTAT)电压,使输出电压小于1 V。在温度系数方面,通过对CTAT电压进行分压降低负温度系数,配合级联PTAT电路,使温度系数能够精确可调。再经由PTAT电压调整管,极大改善了输出温度特性,得到较低的温度系数。后仿真结果表明该基准输出电压为495 mV,整体工作电流仅为8 nA,温度系数为4.86×10~(-6),工作温度为-50~150℃。该设计应用于低压差线性稳压器芯片中,芯片测试结果表明其性能良好。
An all-CMOS-structure band-gap reference circuit based on CSMC 0. 18 μm process was designed. When the circuit was working normally,all MOSFETs of the proposed circuit were in the subthreshold working status,thus ensuing extremely low power consumption of the bandgap reference circuit chip. In terms of the voltage output,the complementary proportional to absolute temperature( CTAT)voltage was reduced by dividing the voltage while lowering the corresponding proportional to the absolute temperature( PTAT) voltage,so that the output voltage was less than 1 V. In terms of the temperature coefficient,the negative temperature coefficient was reduced by dividing the CTAT,and the cascaded PTAT circuit was coordinated to make the temperature coefficient accurately adjustable. The post-simulation results show that the output reference voltage of the bandgap reference is 495 m V,the overall operating current is only 8 n A,the temperature coefficient is 4. 86×10~(-6),and the operating temperature range is-50-150 ℃. The design was applied to a low dropout linear regulator chip,and the chip test results show that its performance is good.
An all-CMOS-structure band-gap reference circuit based on CSMC 0. 18 μm process was designed. When the circuit was working normally,all MOSFETs of the proposed circuit were in the subthreshold working status,thus ensuing extremely low power consumption of the bandgap reference circuit chip. In terms of the voltage output,the complementary proportional to absolute temperature( CTAT)voltage was reduced by dividing the voltage while lowering the corresponding proportional to the absolute temperature( PTAT) voltage,so that the output voltage was less than 1 V. In terms of the temperature coefficient,the negative temperature coefficient was reduced by dividing the CTAT,and the cascaded PTAT circuit was coordinated to make the temperature coefficient accurately adjustable. The post-simulation results show that the output reference voltage of the bandgap reference is 495 m V,the overall operating current is only 8 n A,the temperature coefficient is 4. 86×10~(-6),and the operating temperature range is-50-150 ℃. The design was applied to a low dropout linear regulator chip,and the chip test results show that its performance is good.
引文
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[3]刘锡锋,居水荣,石径,等.一款高精度低功耗电压基准的设计与实现[J].半导体技术,2017,42(11):820-826.LIU X F,JU S R,SHI J,et al.Design and implemen-tation of a voltage reference with high precision and low power consumption[J].Semiconductor Technology,2017,42(11):820-826(in Chinese).
[4]ZHAO G Y,YE M,ZHAO Y Q,et al.A high order curvature compensated bandgap volgate reference with a novel error amplifier[J]Journal of Circuit Systems and Computer,2017,26(9):1750127-1-1750127-5.
[5]BANBA H,SHIGA H,UMEZAWA A,et al.A CMOS bandgap reference circuit with sub-1-V operation[J].Solid-State Circuits,1999,34(5):670-674.
[6]KWON Y J,BONG J H,KIM D H,et al.Sub-1-Voutput CMOS bandgap reference circuit with small area and low power consumption[J].LEICE Electron Express,2009,6(3):161-166.
[7]LEE K K,LANDE T S,HFLIGER P D.A sub-μW bandgap reference circuit with an iinherent curvaturecompensation property[J].IEEE Transactions on Circuits&Systems:I,2015,62(1):1-9.
[8]ZHU Z,HU J,WANG Y.A 0.45 V,nano-watt 0.033%line sensitivity MOSFET-only sub-threshold voltage reference with no amplifiers[J].IEEE Transactions on Circuits&Systems I,2016,63(9):1370-1380.
[9]UENO K,HIROSE T,ASAI T,et al.A 300 n W,15 ppm/℃,20 ppm/V CMOS voltage reference circuit consisting of sub-threshold MOSFETs[J].IEEE Journal of Solid-State Circuits,2009,44(7):2047-2054.
[10]DUAN Q Z,ROH J J.A 1.2 V 4.2 ppm/℃high order curvature-compensated CMOS bandgap reference[J].IEEE Transactions on Circuits and Systems,2014,62(3):662-670.
[11]CHARALAMBOS M A,JULIUS G.A 0.75-V 4-μW15 ppm/℃190℃temperature range voltage reference[J].International Journal of Circuit Theory and Applications,2016,44:1029-1038.