Fabrications and characterizations of high performance 1.2 kV,3.3 kV, and 5.0 kV class 4H–SiC power SBDs
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摘要
In this paper, 1.2 kV, 3.3 kV, and 5.0 kV class 4H–SiC power Schottky barrier diodes(SBDs)are fabricated with three N-type drift layer thickness values of 10 μm, 30 μm, and 50 μm, respectively. The avalanche breakdown capabilities,static and transient characteristics of the fabricated devices are measured in detail and compared with the theoretical predictions. It is found that the experimental results match well with the theoretical calculation results and are very close to the 4H–SiC theoretical limit line. The best achieved breakdown voltages(BVs) of the diodes on the 10 μm, 30 μm, and 50 μm epilayers are 1400 V, 3320 V, and 5200 V, respectively. Differential specific-on resistances(R_(on-sp)) are 2.1 m?·cm~2,7.34m?·cm~2, and 30.3 m?·cm~2, respectively.
In this paper, 1.2 kV, 3.3 kV, and 5.0 kV class 4H–SiC power Schottky barrier diodes(SBDs)are fabricated with three N-type drift layer thickness values of 10 μm, 30 μm, and 50 μm, respectively. The avalanche breakdown capabilities,static and transient characteristics of the fabricated devices are measured in detail and compared with the theoretical predictions. It is found that the experimental results match well with the theoretical calculation results and are very close to the 4H–SiC theoretical limit line. The best achieved breakdown voltages(BVs) of the diodes on the 10 μm, 30 μm, and 50 μm epilayers are 1400 V, 3320 V, and 5200 V, respectively. Differential specific-on resistances(R_(on-sp)) are 2.1 m?·cm~2,7.34m?·cm~2, and 30.3 m?·cm~2, respectively.
In this paper, 1.2 kV, 3.3 kV, and 5.0 kV class 4H–SiC power Schottky barrier diodes(SBDs)are fabricated with three N-type drift layer thickness values of 10 μm, 30 μm, and 50 μm, respectively. The avalanche breakdown capabilities,static and transient characteristics of the fabricated devices are measured in detail and compared with the theoretical predictions. It is found that the experimental results match well with the theoretical calculation results and are very close to the 4H–SiC theoretical limit line. The best achieved breakdown voltages(BVs) of the diodes on the 10 μm, 30 μm, and 50 μm epilayers are 1400 V, 3320 V, and 5200 V, respectively. Differential specific-on resistances(R_(on-sp)) are 2.1 m?·cm~2,7.34m?·cm~2, and 30.3 m?·cm~2, respectively.
引文
[1]Kaji N,Niwa H,Suda J and Kimoto T 2015 IEEE Trans.Electron Dev.62 373
[2]Sung W,Van Brunt E,Baliga B J and Huang A Q 2011 IEEE Electron Dev.Lett.32 880
[3]Song Q W,Yuan H,Han C,Zhang Y M,Tang X Y,Zhang Y M,Guo H,Zhang Y M,Jia R X and Wang Y H 2015 Sci.China-Tech.Sci.581369
[4]Song Q W,Zhang Y M,Zhang Y M and Tang X Y 2012 Diamond Relat.Mater.22 42
[5]Wang Y,Yu C,Miao Z and Shan M G 2015 IET Power Electron.8 672
[6]Yuan H,Tang X Y,Zhang Y M,Zhang Y M,Song Q W,Yang F and Wu H 2014 Chin.Phys.B 23 057102
[7]Zhao J H,Alexandrov P and Li X 2003 IEEE Electron Dev.Lett.24402
[8]Nakamura T,Miyanagi T,Kamata I,Jikimoto T and Tsuchida H 2005IEEE Electron Dev.Lett.26 99
[9]Wahab Q,Kimoto T,Ellison A,Hallin C,Tuominen M,Yakimova R,Henry A,Bergman J P and Janzen E 1998 Appl.Phys.Lett.72 26
[10]Morisette D T,Cooper J A,Melloch M R,Dolny G M,Shenoy P M,Zafrani M and Gladish J 2001 IEEE Trans.Electron Dev.48 349
[11]Huang R H,Chen G,Bai S,Li R,Li Y and Tao Y H 2014 Mater.Sci.Forum.778–780 800
[12]Vassilevski K,Nikitina I,Horsfall A,Wright N G,O’Neill A G,Hilton K P,Munday A G,Hydes A J,Uren M J and Johnson C M 2007 Mater.Sci.Forum.556–557 873
[13]Song Q W,Zhang Y M,Zhang Y M,Zhang Q and Lu H L 2010 Chin.Phys.B 19 087202
[14]Song Q W,Zhang Y M,Han J S,Tanner P,Dimitrijev S,Zhang Y M,Zhang Y M,Tang X Y and Guo H 2013 Chin.Phys.B 22 027302
[15]Trentin A,Zanchetta P,Wheeler P and Clare J 2012 IET Power Electron.5 1873
[16]Ying W,Likun X and Kun D 2014 IET Power Electron.7 325
[17]Zhao J H,Li X,Tone K,Alexandrov P,Pan M and Weiner M 2003Solid-State Electron.47 377
[18]Kimoto T 2015 Jpn.J.Appl.Phys.54 040103
[19]Kimoto T,Urushidani T,Kobayashi S and Matsunami Hiroyuki 1993IEEE Electron Dev.Lett.14 548
[20]Wadaa K,Uchida K,Kimura R,Sakai M,Hatsukawa S,Hiratsuka K,Hirakata N and Mikamura Y 2014 Mater.Sci.Forum.778–780 915
[21]Bartolf H,Sundaramoorthy V,Mihaila A,Berthou M,Godignon P and Millán J 2014 Mater.Sci.Forum.778 795
[22]Song Q W,Zhang Y M,Zhang Y M,Chen F P and Tang X Y 2011Chin.Phys.B 20 057301
[23]Baliga B J 2009 Advanced power rectifier concepts(New York:Springer Science+Business Media,LLC)pp.45–48
[2]Sung W,Van Brunt E,Baliga B J and Huang A Q 2011 IEEE Electron Dev.Lett.32 880
[3]Song Q W,Yuan H,Han C,Zhang Y M,Tang X Y,Zhang Y M,Guo H,Zhang Y M,Jia R X and Wang Y H 2015 Sci.China-Tech.Sci.581369
[4]Song Q W,Zhang Y M,Zhang Y M and Tang X Y 2012 Diamond Relat.Mater.22 42
[5]Wang Y,Yu C,Miao Z and Shan M G 2015 IET Power Electron.8 672
[6]Yuan H,Tang X Y,Zhang Y M,Zhang Y M,Song Q W,Yang F and Wu H 2014 Chin.Phys.B 23 057102
[7]Zhao J H,Alexandrov P and Li X 2003 IEEE Electron Dev.Lett.24402
[8]Nakamura T,Miyanagi T,Kamata I,Jikimoto T and Tsuchida H 2005IEEE Electron Dev.Lett.26 99
[9]Wahab Q,Kimoto T,Ellison A,Hallin C,Tuominen M,Yakimova R,Henry A,Bergman J P and Janzen E 1998 Appl.Phys.Lett.72 26
[10]Morisette D T,Cooper J A,Melloch M R,Dolny G M,Shenoy P M,Zafrani M and Gladish J 2001 IEEE Trans.Electron Dev.48 349
[11]Huang R H,Chen G,Bai S,Li R,Li Y and Tao Y H 2014 Mater.Sci.Forum.778–780 800
[12]Vassilevski K,Nikitina I,Horsfall A,Wright N G,O’Neill A G,Hilton K P,Munday A G,Hydes A J,Uren M J and Johnson C M 2007 Mater.Sci.Forum.556–557 873
[13]Song Q W,Zhang Y M,Zhang Y M,Zhang Q and Lu H L 2010 Chin.Phys.B 19 087202
[14]Song Q W,Zhang Y M,Han J S,Tanner P,Dimitrijev S,Zhang Y M,Zhang Y M,Tang X Y and Guo H 2013 Chin.Phys.B 22 027302
[15]Trentin A,Zanchetta P,Wheeler P and Clare J 2012 IET Power Electron.5 1873
[16]Ying W,Likun X and Kun D 2014 IET Power Electron.7 325
[17]Zhao J H,Li X,Tone K,Alexandrov P,Pan M and Weiner M 2003Solid-State Electron.47 377
[18]Kimoto T 2015 Jpn.J.Appl.Phys.54 040103
[19]Kimoto T,Urushidani T,Kobayashi S and Matsunami Hiroyuki 1993IEEE Electron Dev.Lett.14 548
[20]Wadaa K,Uchida K,Kimura R,Sakai M,Hatsukawa S,Hiratsuka K,Hirakata N and Mikamura Y 2014 Mater.Sci.Forum.778–780 915
[21]Bartolf H,Sundaramoorthy V,Mihaila A,Berthou M,Godignon P and Millán J 2014 Mater.Sci.Forum.778 795
[22]Song Q W,Zhang Y M,Zhang Y M,Chen F P and Tang X Y 2011Chin.Phys.B 20 057301
[23]Baliga B J 2009 Advanced power rectifier concepts(New York:Springer Science+Business Media,LLC)pp.45–48