Y_2O_3/Si界面电学特性研究
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摘要
为了研究不同退火温度对Y2O3/Si界面电学特性的影响,对Y2O3/Si界面做快速热退火处理。用C-V和I-V方法对Al/Y2O3/Si/Al MOS电容进行电学特性测试。结果表明:界面态密度随着退火温度升高而减小,此外,经400℃退火后,MOS电容有最大的击穿场强(5 MV/cm),这是由于在400℃退火条件下陷阱密度减小,界面特性改善;由于Y2O3的结晶温度低,在500℃下Y2O3结晶,形成漏电路径,导致漏电流增加,击穿场强减小,在600℃时击穿电场仅有1.5MV/cm;由以上结果可以得出,随着退火温度的增加,界面陷阱密度会减小,但高温(>500℃)会使Y2O3结晶,导致漏电流增大,击穿电场减小。
To study the electrical properties of Y2O3/Si interface,a rapid thermal annealing(RTA)process for the Y2O3/Si interface is described and its effect on the material's electrical properties(C-Vand I-V measurements)is investigated.Results show that the interface state density(Dit)is reduced as the RTA temperature increases.The MOS capacitors show the largest breakdown electric field(Efb)(5MV/cm)after RTA at 400℃ due to the improved interface quality.However,once the RTA temperature reaches 500 ℃ or higher,a large leakage current density and lower Efbvalue(1.5 MV/cm at 600 ℃)are obtained due to leakage routes generated by the crystallization of Y2O3.We can conclude that as the RTA temperature increases the interface state density reduces,but at the high temperature(>500℃)will cause the leakage current to increase and breakdown field to decrease by the crystallization of the Y2O3.
To study the electrical properties of Y2O3/Si interface,a rapid thermal annealing(RTA)process for the Y2O3/Si interface is described and its effect on the material's electrical properties(C-Vand I-V measurements)is investigated.Results show that the interface state density(Dit)is reduced as the RTA temperature increases.The MOS capacitors show the largest breakdown electric field(Efb)(5MV/cm)after RTA at 400℃ due to the improved interface quality.However,once the RTA temperature reaches 500 ℃ or higher,a large leakage current density and lower Efbvalue(1.5 MV/cm at 600 ℃)are obtained due to leakage routes generated by the crystallization of Y2O3.We can conclude that as the RTA temperature increases the interface state density reduces,but at the high temperature(>500℃)will cause the leakage current to increase and breakdown field to decrease by the crystallization of the Y2O3.
引文
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[3]DAS K C,GHOSH S P,TRIPATHY N,et al.Effect of post-deposition annealing on the structural and electrical properties of RF sputtered hafnium oxide thin films[C]//IOP Conference Series:Materials Science and Engineering.[S.l.]:IOP Publishing,2016:012015.
[4]PRASHER R,DASS D,VAID R.Improved structural and electric characterstics of Al/ALD-HfO2/Ge MOScapacitor by germanium dioxide and germanium oxynitride as interfacial Layer[J].ECS Transactions,2015,66(4):315-321.
[5]LI N,HARMON E S,HYLAND J,et al.Properties of InAs metal-oxide-semiconductor structures with atomic-layer-deposited Al2O3 dielectric[J].Applied Physics Letters,2008,92(14):143507.
[6]XIAO-YAN T,QING-WEN S,YU-MING Z,et al.Investigation of a 4H-SiC metal-insulation-semiconductor structure with an Al2O3/SiO2stacked dielectric[J].Chinese Physics B,2012,21(8):087701.
[7]WANG Y,JIA R,LI C,et al.Electric properties of La2O3/SiO2/4H-SiC MOS capacitors with different annealing temperatures[J].AIP Advances,2015,5(8):087166.
[8]CHANG C Y,ICHIKAWA O,OSADA T,et al.Impact of La2O3interfacial layers on InGaAs metal-oxide-semiconductor interface properties in Al2O3/La2O3/InGaAs gate stacks deposited by atomic-layer-deposition[J].Journal of Applied Physics,2015,118(8):085309.
[9]QUAH H J,CHEMONG K Y.Effects of annealing time on the electrical properties of the Y2O3gate on silicon[J].Journal of Experimental Nanoscience,2015,10(1):19-28.
[10]RASTOGI A C,DESU S B.Current conduction and dielectric behavior of high k-Y2O3films integrated with Si using chemical vapor deposition as a gate dielectric for metal-oxide-semiconductor devices[J].Journal of electroceramics,2004,13(1/2/3):121-127.
[11]OSTEN H J,LAHA A,CZERNOHORSKY M,et al.Introducing crystalline rare‐earth oxides into Si technologies[J].Physica Status Solidi(a),2008,205(4):695-707.
[12]QUAH H J,LIM W F,WIMBUSH S C,et al.Electrical properties of pulsed laser deposited Y2O3gate oxide on 4H-SiC[J].Electrochemical and Solid-State Letters,2010,13(11):H396-H398.
[13]MAHATA C,DAS T,MALLIK S,et al.Flatband voltage characteristics of Hf-incorporated Y2O3/strained-Si gate stacks with Au,Pt,and Ni metal gates[J].Electrochemical and Solid-State Letters,2011,14(2):H80-H83.
[14]LI C X,XU H X,XU J P,et al.Effects of annealing gas species on the electrical properties and reliability of Ge MOS capacitors with high-k Y2O3gate dielectric[C]//Electron Devices and Solid-State Circuits,2009.EDSSC 2009.IEEE,2009:243-246.
[15]QUAH H J,CHEONG K Y.Effects of post-deposition annealing ambient on Y2O3gate deposited on silicon by RF magnetron sputtering[J].Journal of Alloys and Compounds,2012,529(29):73-83.
[16]WANG X J,ZHANG L D,ZHANG J P,et al.Effects of post-deposition annealing on the structure and optical properties of Y2O3 thin films[J].Materials Letters,2008,62(26):4235-4237.
[17]TERMAN L M.An investigation of surface states at a silicon/silicon dioxide interface employing metal-oxidesilicon diodes[J].Solid-State Electron,1962,5(5):285-299.