量子点发光二极管在大电压下的失效研究
|
摘要
作为下一代照明光源和显示器件,量子点发光二极管的失效研究对提高其可靠性,促进其进入市场应用具有重要的价值和意义。对量子点发光二极管器件施加7 V恒压电压,使其快速失效,平均中位寿命为4 h,寿命为45 h。主要的失效形式为电流密度和亮度急剧下降,最终不再发光,并且在器件表面出现黑色斑点。可能的失效机制为Al电极等功能层发生了化学反应或者在界面出现了脱层,导致电荷无法注入,使器件失效。
As the next generation device for lighting and display,the research on the failure of quantum dot light-emitting diode( QLED) has important value and significance to improve its reliability and promote its application in market. By applying a constant voltage of 7 V to the QLED device,it can be found that the large voltage causes the device to fail quickly. The average median life of the QLED is 4 h and the life is 45 h. The main failure mode is that the current density and brightness of the QLED devices drop sharply,eventually no longer emitting light,and some black spots appear on the surface of the device. The possible failure mechanism is a chemical reaction in functional layers such as the Al electrode or delamination at the interface,resulting the device failure due to the inability of inject charge.
As the next generation device for lighting and display,the research on the failure of quantum dot light-emitting diode( QLED) has important value and significance to improve its reliability and promote its application in market. By applying a constant voltage of 7 V to the QLED device,it can be found that the large voltage causes the device to fail quickly. The average median life of the QLED is 4 h and the life is 45 h. The main failure mode is that the current density and brightness of the QLED devices drop sharply,eventually no longer emitting light,and some black spots appear on the surface of the device. The possible failure mechanism is a chemical reaction in functional layers such as the Al electrode or delamination at the interface,resulting the device failure due to the inability of inject charge.
引文
[1]Shang Y Q,Ning Z J.Colloidal quantum dots surface and device structure engineering for high performance light emitting diodes[J].National Science Review,2017,4(2):170-183.
[2]Kim S,Kim T,Kang M,et al.Highly luminescent InP/Ga P/ZnS nanocrystals and their application to white light-emitting diodes[J].Journal of the American Chemical Society,2012,134(8):3804-3809.
[3]Chen B,Zhong H,Wang M,et al.Integration of CuInS2-based nanocrystals for high efficiency and high colour rendering white light-emitting diodes[J].Nanoscale,2013,5(8):3514-3519.
[4]Li X M,Wu Y,Zhang S L,et al.CsPbX3quantum dots for lighting and displays:Room-temperature synthesis,photoluminescence superiorities,underlying origins and white light-emitting diodes[J].Advanced Functional Materials,2016,26(15):2435-2445.
[5]Dai X,Zhang Z,Jin Y,et al.Solution-processed,high-performance light-emitting diodes based on quantum dots[J].Nature,2015,515:96-99.
[6]郑代顺,钱可元,罗毅.大功率发光二极管的寿命试验及其失效分析[J].半导体光电,2005,26(2):87-91.
[7]肖诗满,彭泽亚,李少平.LED典型失效机理[J].半导体技术,2011,36(3):242-246.
[8]薛正群,黄生荣,张保平,等.Ga N基白光发光二极管失效机理分析[J].物理学报,2010,59(7):5002-5009.
[9]杨少华,吴福根,张春华.白光LED的失效机理分析[J].半导体光电,2009,30(6):857-859.
[10]刘婕,张善端.LED主要失效模式综述[C].上海照明科技及应用趋势论坛论文集,2011:36-38.
[11]雷志锋,冯敬东.LED失效及其原因分析[C].第十二届全国可靠性物理学术讨论会论文集,2007:56-60.
[12]路国光,李玲,杨少华,等.LED常见失效模式及机理研究[C].中国电子学会第十四届青年学术年会论文集,2008:148-151.
[13]王亚盛,张丽燕,刁生进.大功率LED加速寿命试验及问题分析[J].半导体技术,2009,34(10):986-990.
[14]Hsu Y C,Lin Y K,Chen M H,et al.Failure mechanisms associated with lens shape of high-power LED modules in aging test[J].IEEE Transactions on Electron Devices,2008,55(2):689-694.
[2]Kim S,Kim T,Kang M,et al.Highly luminescent InP/Ga P/ZnS nanocrystals and their application to white light-emitting diodes[J].Journal of the American Chemical Society,2012,134(8):3804-3809.
[3]Chen B,Zhong H,Wang M,et al.Integration of CuInS2-based nanocrystals for high efficiency and high colour rendering white light-emitting diodes[J].Nanoscale,2013,5(8):3514-3519.
[4]Li X M,Wu Y,Zhang S L,et al.CsPbX3quantum dots for lighting and displays:Room-temperature synthesis,photoluminescence superiorities,underlying origins and white light-emitting diodes[J].Advanced Functional Materials,2016,26(15):2435-2445.
[5]Dai X,Zhang Z,Jin Y,et al.Solution-processed,high-performance light-emitting diodes based on quantum dots[J].Nature,2015,515:96-99.
[6]郑代顺,钱可元,罗毅.大功率发光二极管的寿命试验及其失效分析[J].半导体光电,2005,26(2):87-91.
[7]肖诗满,彭泽亚,李少平.LED典型失效机理[J].半导体技术,2011,36(3):242-246.
[8]薛正群,黄生荣,张保平,等.Ga N基白光发光二极管失效机理分析[J].物理学报,2010,59(7):5002-5009.
[9]杨少华,吴福根,张春华.白光LED的失效机理分析[J].半导体光电,2009,30(6):857-859.
[10]刘婕,张善端.LED主要失效模式综述[C].上海照明科技及应用趋势论坛论文集,2011:36-38.
[11]雷志锋,冯敬东.LED失效及其原因分析[C].第十二届全国可靠性物理学术讨论会论文集,2007:56-60.
[12]路国光,李玲,杨少华,等.LED常见失效模式及机理研究[C].中国电子学会第十四届青年学术年会论文集,2008:148-151.
[13]王亚盛,张丽燕,刁生进.大功率LED加速寿命试验及问题分析[J].半导体技术,2009,34(10):986-990.
[14]Hsu Y C,Lin Y K,Chen M H,et al.Failure mechanisms associated with lens shape of high-power LED modules in aging test[J].IEEE Transactions on Electron Devices,2008,55(2):689-694.