室温生长AZO/Al_2O_3叠层薄膜晶体管性能研究
|
摘要
针对目前大多数氧化物薄膜晶体管都需要采用热退火工艺来提高其性能不利于其在柔性显示器件中应用这一问题,提出了一种采用室温工艺制备的新型TFT器件,无需退火处理即可获得较好的器件性能。该器件采用脉冲激光沉积技术制备的AZO/Al_2O_3叠层结构作为沟道层。与单层AZO-TFT器件相比,叠层TFT器件具有更优异的性能,其迁移率为2.27 cm2·V-1·s-1,开关比为1.43×106。通过对AZO/Al_2O_3叠层薄膜的厚度、密度、粗糙度、物相、界面特性及能带结构等进行分析,发现这种叠层结构能够使电子的运动被限制在AZO薄膜平面内,即形成了二维电子传输,从而提升TFT器件的性能。
Most of the oxide thin film transistor( TFT) need thermal annealing process to improve its performance,which is detrimental to their applications in the flexible display devices. Concerning this problem,a new TFT structure with room temperature process was presented,which has good performance without annealing treatment. AZO / Al2O3 stacked thin film was prepared by pulsed laser deposition as a channel layer. The stacked TFT showed better performance than single-layer AZOTFT. The field effect mobility and on / off current ratio were 2. 27 cm2·V- 1·s- 1and 1. 43 × 106.By analyzing the thickness,density,roughness,phase and band structure of AZO / Al2O3 stackedthin film,it is found that the electrons can be confined in the potential well of AZO,which forms a two-dimensional electron transport to improve the performance of TFT device.
Most of the oxide thin film transistor( TFT) need thermal annealing process to improve its performance,which is detrimental to their applications in the flexible display devices. Concerning this problem,a new TFT structure with room temperature process was presented,which has good performance without annealing treatment. AZO / Al2O3 stacked thin film was prepared by pulsed laser deposition as a channel layer. The stacked TFT showed better performance than single-layer AZOTFT. The field effect mobility and on / off current ratio were 2. 27 cm2·V- 1·s- 1and 1. 43 × 106.By analyzing the thickness,density,roughness,phase and band structure of AZO / Al2O3 stackedthin film,it is found that the electrons can be confined in the potential well of AZO,which forms a two-dimensional electron transport to improve the performance of TFT device.
引文
[1]LIANG C,CHAU J L H,YANG C,et al..Preparation of amorphous Ga-Sn-Zn-O semiconductor thin films by RF-sputtering method[J].Mater.Sci.Eng.:B,2014,183:17-23.
[2]苟昌华,武明珠,郭永林,等.未退火In Ga Zn O作为缓冲层的In Ga Zn O薄膜晶体管性能研究[J].液晶与显示,2015,30(4):602-607.GOU C H,WU M Z,GUO Y L,et al..Effects of using In Ga Zn O without annealing as buffer layer on the performance of In Ga Zn O thin film transistors[J].Chin.J.Liq.Cryst.Disp.,2015,30(4):602-607.(in Chinese)
[3]KANG M,KIM S J,KIM H J.Fabrication of high performance thin-film transistors via pressure-induced nucleation[J].Sci.Rep.,2014,4:6858.
[4]HENNEK J W,SMITH J,YAN A,et al..Oxygen“Getter”effects on microstructure and carrier transport in low temperature combustion-processed a-In XZn O(X=Ga,Sc,Y,La)transistors[J].J.Am.Chem.Soc.,2013,135(29):10729-10741.
[5]HUANG G,DUAN L,DONG G,et al..High-mobility solution-processed tin oxide thin-film transistors with high-κalumina dielectric working in enhancement mode[J].ACS Appl.Mater.Interf.,2014,6(23):20786-20794.
[6]ZOU X,WANG J,CHIU C,et al..Interface engineering for high-performance top-gated Mo S2field-effect transistors[J].Adv.Mater.,2014(26):6255-6261.
[7]LIU H,LAI Y,LAI C,et al..Highly effective field-effect mobility amorphous In Ga Zn O TFT mediated by directional silver nanowire arrays[J].ACS Appl.Mater.Interf.,2015,7(1):232-240.
[8]LIAU L C,LIN Y.Fabrication of assembled Zn O/Ti O2heterojunction thin film transistors using solution processing technique[J].Solid-State Electronics,2015,103:54-58.
[9]NAYAK P K,WANG Z,ANJUM D H,et al..Highly stable thin film transistors using multilayer channel structure[J].Appl.Phys.Lett.,2015,106(10):103505.
[10]AHN C H,KIM S H,KIM Y K,et al..Effect of post-annealing temperatures on thin-film transistors with Zn O/Al2O3superlattice channels[J].Thin Solid Films,2015,584:336-340.
[11]LEE S,HWANG C,PI J,et al..Characterization of amorphous multilayered Zn O-Sn O2heterostructure thin films and their field effect electronic properties[J].Appl.Phys.Lett.,2014,105(20):201601.
[12]AHN C H,SENTHIL K,CHO H K,et al..Artificial semiconductor/insulator superlattice channel structure for high-performance oxide thin-film transistors[J].Sci.Rep.,2013,3:2737.
[13]GRANOZIO F M,KOSTER G,RIJNDERS G.Functional oxide interfaces[J].MRS Bulletin,2013,38(12):1017-1023.
[14]ROGERS J A,SOMEYA T,HUANG Y.Materials and mechanics for stretchable electronics[J].Science,2010,327(5973):1603-1607.
[15]HWANG H Y,IWASA Y,KAWASAKI M,et al..Emergent phenomena at oxide interfaces[J].Nat.Mater.,2012,11(2):103-113.
[16]CHEN Y Z,BOVET N,TRIER F,et al..A high-mobility two-dimensional electron gas at the spinel/perovskite interface ofγ-Al2O3/Sr Ti O3[J].Nat.Commun.,2013,4:1371.
[17]ATAIDE S F,SCHMITZ N,SHEN K,et al..The crystal structure of the signal recognition particle in complex with its receptor[J].Science,2011,331(6019):881-886.
[18]AJIMSHA R S,DAS A K,JOSHI M P,et al..Band alignment studies of Al2O3/Cu Ga O2and Zn O/Cu Ga O2hetero-structures grown by pulsed laser deposition[J].Appl.Surf.Sci.,2014,317:994-999.
[19]LEE S,GHAFFARZADEH K,NATHAN A,et al..Trap-limited and percolation conduction mechanisms in amorphous oxide semiconductor thin film transistors[J].Appl.Phys.Lett.,2011,98(20):203508.
[20]KAMIYA T,NOMURA K,HOSONO H.Origin of definite Hall voltage and positive slope in mobility-donor density relation in disordered oxide semiconductors[J].Appl.Phys.Lett.,2010,96(12):122103.
[21]AIKAWA S,MITOMA N,KIZU T,et al..Suppression of excess oxygen for environmentally stable amorphous In-Si-O thin-film transistors[J].Appl.Phys.Lett.,2015,106(19):192103.
[22]CHEN W,LO S,KAO S,et al..Oxygen-dependent instability and annealing/passivation effects in amorphous In-Ga-ZnO thin-film transistors[J].IEEE Electron Dev.Lett.,2011,32(11):1552-1554.
[23]JEONG J K,WON YANG H,JEONG J H,et al..Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors[J].Appl.Phys.Lett.,2008,93(12):123508.
[24]KIM D,YOON S,JEONG Y,et al..Role of adsorbed H2O on transfer characteristics of solution-processed zinc tin oxide thin-film transistors[J].Appl.Phys.Express,2012,5(2):21101.
[2]苟昌华,武明珠,郭永林,等.未退火In Ga Zn O作为缓冲层的In Ga Zn O薄膜晶体管性能研究[J].液晶与显示,2015,30(4):602-607.GOU C H,WU M Z,GUO Y L,et al..Effects of using In Ga Zn O without annealing as buffer layer on the performance of In Ga Zn O thin film transistors[J].Chin.J.Liq.Cryst.Disp.,2015,30(4):602-607.(in Chinese)
[3]KANG M,KIM S J,KIM H J.Fabrication of high performance thin-film transistors via pressure-induced nucleation[J].Sci.Rep.,2014,4:6858.
[4]HENNEK J W,SMITH J,YAN A,et al..Oxygen“Getter”effects on microstructure and carrier transport in low temperature combustion-processed a-In XZn O(X=Ga,Sc,Y,La)transistors[J].J.Am.Chem.Soc.,2013,135(29):10729-10741.
[5]HUANG G,DUAN L,DONG G,et al..High-mobility solution-processed tin oxide thin-film transistors with high-κalumina dielectric working in enhancement mode[J].ACS Appl.Mater.Interf.,2014,6(23):20786-20794.
[6]ZOU X,WANG J,CHIU C,et al..Interface engineering for high-performance top-gated Mo S2field-effect transistors[J].Adv.Mater.,2014(26):6255-6261.
[7]LIU H,LAI Y,LAI C,et al..Highly effective field-effect mobility amorphous In Ga Zn O TFT mediated by directional silver nanowire arrays[J].ACS Appl.Mater.Interf.,2015,7(1):232-240.
[8]LIAU L C,LIN Y.Fabrication of assembled Zn O/Ti O2heterojunction thin film transistors using solution processing technique[J].Solid-State Electronics,2015,103:54-58.
[9]NAYAK P K,WANG Z,ANJUM D H,et al..Highly stable thin film transistors using multilayer channel structure[J].Appl.Phys.Lett.,2015,106(10):103505.
[10]AHN C H,KIM S H,KIM Y K,et al..Effect of post-annealing temperatures on thin-film transistors with Zn O/Al2O3superlattice channels[J].Thin Solid Films,2015,584:336-340.
[11]LEE S,HWANG C,PI J,et al..Characterization of amorphous multilayered Zn O-Sn O2heterostructure thin films and their field effect electronic properties[J].Appl.Phys.Lett.,2014,105(20):201601.
[12]AHN C H,SENTHIL K,CHO H K,et al..Artificial semiconductor/insulator superlattice channel structure for high-performance oxide thin-film transistors[J].Sci.Rep.,2013,3:2737.
[13]GRANOZIO F M,KOSTER G,RIJNDERS G.Functional oxide interfaces[J].MRS Bulletin,2013,38(12):1017-1023.
[14]ROGERS J A,SOMEYA T,HUANG Y.Materials and mechanics for stretchable electronics[J].Science,2010,327(5973):1603-1607.
[15]HWANG H Y,IWASA Y,KAWASAKI M,et al..Emergent phenomena at oxide interfaces[J].Nat.Mater.,2012,11(2):103-113.
[16]CHEN Y Z,BOVET N,TRIER F,et al..A high-mobility two-dimensional electron gas at the spinel/perovskite interface ofγ-Al2O3/Sr Ti O3[J].Nat.Commun.,2013,4:1371.
[17]ATAIDE S F,SCHMITZ N,SHEN K,et al..The crystal structure of the signal recognition particle in complex with its receptor[J].Science,2011,331(6019):881-886.
[18]AJIMSHA R S,DAS A K,JOSHI M P,et al..Band alignment studies of Al2O3/Cu Ga O2and Zn O/Cu Ga O2hetero-structures grown by pulsed laser deposition[J].Appl.Surf.Sci.,2014,317:994-999.
[19]LEE S,GHAFFARZADEH K,NATHAN A,et al..Trap-limited and percolation conduction mechanisms in amorphous oxide semiconductor thin film transistors[J].Appl.Phys.Lett.,2011,98(20):203508.
[20]KAMIYA T,NOMURA K,HOSONO H.Origin of definite Hall voltage and positive slope in mobility-donor density relation in disordered oxide semiconductors[J].Appl.Phys.Lett.,2010,96(12):122103.
[21]AIKAWA S,MITOMA N,KIZU T,et al..Suppression of excess oxygen for environmentally stable amorphous In-Si-O thin-film transistors[J].Appl.Phys.Lett.,2015,106(19):192103.
[22]CHEN W,LO S,KAO S,et al..Oxygen-dependent instability and annealing/passivation effects in amorphous In-Ga-ZnO thin-film transistors[J].IEEE Electron Dev.Lett.,2011,32(11):1552-1554.
[23]JEONG J K,WON YANG H,JEONG J H,et al..Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors[J].Appl.Phys.Lett.,2008,93(12):123508.
[24]KIM D,YOON S,JEONG Y,et al..Role of adsorbed H2O on transfer characteristics of solution-processed zinc tin oxide thin-film transistors[J].Appl.Phys.Express,2012,5(2):21101.