基于第三代半导体氮化镓器件的应用教学改革
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  • 英文篇名:Study on Creative Project Related to 3rd Generation GaN-based Devices
  • 作者:刘新科 ; 王佳乐 ; 陈勇 ; 陈大柱
  • 英文作者:Liu Xinke;Wang Jiale;Chen Yong;Dazhu Chen;College of Materials Science and Engineering,Shenzhen Univeristy;
  • 关键词:氮化镓 ; 电学性质 ; 实验教学
  • 英文关键词:gallium nitride;;electrical characteristics;;experimental teaching
  • 中文刊名:GDHG
  • 英文刊名:Guangdong Chemical Industry
  • 机构:深圳大学材料学院;
  • 出版日期:2019-02-28
  • 出版单位:广东化工
  • 年:2019
  • 期:v.46;No.390
  • 基金:科技部重点研发计划(2017YFB0403000);; 国家自然科学基金青年项目(61504083);; 深圳市基础研究项目(JCYJ20160226192033020);; 《环境材料》课堂教学模式创新研究与实践(JG2018052)
  • 语种:中文;
  • 页:GDHG201904088
  • 页数:2
  • CN:04
  • ISSN:44-1238/TQ
  • 分类号:186-187
摘要
如今,在半导体材料中,以氮化镓为代表的第三代半导体材料及器件的开发是新兴半导体产业的核心和基础。因此,让学生更好地学习与理解基于氮化镓材料应用教学课程对于推动电力电子产业发展和促进半导体行业的发展具有重要意义。本文推出了基于氮化镓材料应用教学改革,通过模拟仿真应用教学。以期教学能紧跟学科发展方向,通过理论学习结合实验操作,在实验中发现问题,调动学习积极性,培养动手能力,提高学生学习效率,改善教学质量。
        Nowadays, the development of third-generation semiconductor materials and devices represented by gallium nitride is the core and foundation of the emerging semiconductor industry in semiconductor materials. Therefore, it is of great significance for students to better learn and understand the teaching courses based on GaN materials to promote the development of the power electronics industry and promote the development of the semiconductor industry. This paper introduces the teaching reform based on the application of GaN materials, through the application of simulation. It is hoped that teaching can follow the development direction of the subject, through theoretical study combined with experimental operation, find problems in the experiment, mobilize learning enthusiasm, develop hands-on ability, improve students' learning efficiency and improve pedagogical quality.
引文
[1]杨树人.半导体材料[M].北京科学出版社,2004.
    [2]陈国英.《半导体器件与物理基础》课程教学的思考[J].常州:常州信息职业技术学院学报,2014(6).
    [3]郝亚非.《半导体材料》教学方法探讨[J].科技信息,2014,(13):238.