基片偏压改变对镁合金Ti/TiN膜质量的影响
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  • 英文篇名:Effect of Change of Bias Voltage on the Quality of Ti/TiN Film on Magnesium Alloy
  • 作者:李忠厚 ; 宫学博 ; 郭腾腾 ; 马芹芹 ; 杨迪
  • 英文作者:LI Zhong-hou;GONG Xue-bo;GUO Teng-teng;MA Qin-qin;YANG Di;College of Mechanical and Electrical Engineering,Qingdao Binhai University;
  • 关键词:镁合金AZ31 ; 偏压 ; 多弧离子镀 ; Ti/TiN膜层质量
  • 英文关键词:AZ31 magnesium alloy;;bias voltage;;multi-arc plating;;quality of Ti/TiN films
  • 中文刊名:BMJS
  • 英文刊名:Surface Technology
  • 机构:青岛滨海学院机电工程学院;
  • 出版日期:2015-01-20
  • 出版单位:表面技术
  • 年:2015
  • 期:v.44
  • 语种:中文;
  • 页:BMJS201501018
  • 页数:5
  • CN:01
  • ISSN:50-1083/TG
  • 分类号:97-100+141
摘要
目的探讨基片偏压对镁合金Ti/TiN膜层质量的影响。方法利用多弧离子镀技术,在不同偏压条件下,对镁合金先镀Ti再镀TiN,通过SEM观察膜层形貌,通过划痕测定膜基结合性能,通过电化学工作站对比AZ31镁合金与不同偏压镀膜试样的耐蚀性。结果偏压为200V时,TiN膜层致密均匀且成膜速度快,膜层耐蚀性最好;偏压为200V时,基体结合最好且膜层较厚,有较好的耐蚀性。结论镀Ti膜时的偏压对随后镀TiN的质量有着显著的影响,以200V偏压的工艺镀TiN膜层质量最好,膜层致密,成膜速度快,耐蚀性优良。
        Objective To explore the effect of substrate bias on the quality of Ti / Ti N film. Methods Making use of the technology of multi-arc ion plating,magnesium alloy was plated with Ti followed by Ti N plating under different bias voltage. The morphology of films was observed by SEM,the adhesion of the film with substrate was investigated by scratch tester,and the corrosion resistance of film samples plated with different bias was compared to that of AZ31 magnesium alloy through electrochemical working station. Results When the bias voltage was 200 V,the Ti N film was uniform and compact,the velocity of film formation was quick,and the corrosion resistance of the film was the best. When the bias voltage was 200 V,the film had the strongest bonding with the substrate and considerable thickness,besides,the corrosion resistance was relatively high. Conclusion Bias voltage during Ti plating of film had significant impact on the quality of the subsequent Ti N plating,and the coating quality was the best when the bias voltage was 200 V,the resulting film was compact,the velocity of film formation was fast,and the film had excellent corrosion resistance.
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