零维、一维和二维ZnO纳米材料的应用研究进展
详细信息    查看全文 | 推荐本文 |
  • 英文篇名:Application Research and Progress of 0D,1D and 2D ZnO Nanomaterials
  • 作者:杨丰 ; 王飞 ; 贾若飞 ; 杨丽丽 ; 杨慧 ; 李岚
  • 英文作者:YANG Feng;WANG Fei;JIA Ruo-fei;YANG Li-li;YANG Hui;LI Lan;School of Materials Science and Engineering,Tianjin University of Technology;Tianjin Key Laboratory for Optoelectronic Materials and Devices;Key Laboratory of Display Materials and Photoelectric Devices(Ministry of Education);
  • 关键词:氧化锌 ; 纳米材料 ; 光电器件 ; 器件应用
  • 英文关键词:ZnO;;nanomaterial;;optoelectronic device;;device application
  • 中文刊名:CLGC
  • 英文刊名:Journal of Materials Engineering
  • 机构:天津理工大学材料科学与工程学院;天津市光电显示材料与器件重点实验室;显示材料与光电器件教育部重点实验室;
  • 出版日期:2018-10-18 16:20
  • 出版单位:材料工程
  • 年:2018
  • 期:v.46;No.425
  • 基金:天津市高等学校科技发展基金计划项目(20140301);; “131”创新型人才培养工程项目(401008002);; 天津理工大学学生科技基金及大学生创新创业训练计划项目(X2015001)
  • 语种:中文;
  • 页:CLGC201810004
  • 页数:10
  • CN:10
  • ISSN:11-1800/TB
  • 分类号:24-33
摘要
氧化锌宽禁带半导体不仅具有优异光电性质,而且包含丰富的零维、一维和二维纳米结构。本文主要从零维、一维和二维氧化锌纳米结构的角度出发,分别论述其在光催化器件、气体探测器、太阳能电池、光探测器、发光二极管、激光器、压电转换器件和阻变存储器应用领域的研究进展,并横向对照3种维度氧化锌纳米材料在不同器件领域的应用情况,分析总结不同维度各自物理特性优势发挥的应用器件,最后对氧化锌纳米材料应用面临的难实现p型掺杂等问题进行了展望。
        ZnO as a wide band gap semiconductor not only has excellent optoelectronic properties,but also contains rich 0 D,1 Dand 2 Dnanostructures.Based on the 0 D,1 Dand 2 DZnO nanomaterials,the research progress of main optoelectronic device application,including photocatalysis,gas detectors,solar cells,photodetectors,light emitting diodes,lasers,piezoelectric devices and resistive random access memory was narrated synthetically in this paper.The differences of three dimensions in optoelectronic application of ZnO nanomaterial were laterally comparatively analyzed,and the advantages of different dimensions in the optoelectronic devices were summarized,finally,the problems in the application of zinc oxide nanomaterials were also prospected,such as the difficulty to achieve p-type doping.
引文
[1] BARIK S,SRIVASTAVA A K,MISRA P,et al.Alumina capped ZnO quantum dots multilayer grown by pulsed laser deposition[J].Solid State Communications,2003,127(6):463-467.
    [2] WAN Q,LI Q,CHEN Y,et al.Fabrication and ethanol sensing characteristics of ZnO nanowire gas sensors[J].Applied Physics Letters,2004,84(18):3654-3656.
    [3] CHANG W,LIN C A,HE J H,et al.Resistive switching behaviors of ZnO nanorod layers[J].Applied Physics Letters,2010,96(24):242109.
    [4] ZHANG X,QIN J,XUE Y,et al.Effect of aspect ratio and surface defects on the photocatalytic activity of ZnO nanorods[J].Scientific Reports,2014,4:4596.
    [5] FOUAD O A,ISMAIL A A,ZAKI Z I,et al.Zinc oxide thin films prepared by thermal evaporation deposition and its photocatalytic activity[J].Applied Catalysis B:Environmental,2006,62(1):144-149.
    [6] PAUPORTE T,RATHOUSKY J.Electrodeposited mesoporous ZnO thin films as efficient photocatalysts for the degradation of dye pollutants[J].The Journal of Physical Chemistry C,2007,111(21):7639-7644.
    [7] XU T,ZHANG L,CHENG H,et al.Significantly enhanced photocatalytic performance of ZnOviagraphene hybridization and the mechanism study[J].Applied Catalysis B:Environmental,2011,101(3):382-387.
    [8] McLAREN A,VALDESSOLIS T,LI G,et al.Shape and size effects of ZnO nanocrystals on photocatalytic activity[J].Journal of the American Chemical Society,2009,131(35):12540-12541.
    [9] YANG J,SUNG J,PARK W I,et al.Photocatalysis using ZnO thin films and nanoneedles grown by metal-organic chemical vapor deposition[J].Advanced Materials,2004,16(18):1661-1664.
    [10] BARUAH S,JAISAI M,IMANI R,et al.Photocatalytic paper using zinc oxide nanorods[J].Science and Technology of Advanced Materials,2010,11(5):055002.
    [11] SHISHIYANU S T,SHISHIYANU T S,LUPAN O I.Sensing characteristics of tin-doped ZnO thin films as NO2 gas sensor[J].Sensors and Actuators B:Chemical,2005,107(1):379-386.
    [12] JING Z,ZHAN J.Fabrication and gas-sensing properties of porous ZnO nanoplates[J].Advanced Materials,2008,20(23):4547-4551.
    [13] BARUWATI B,KUMAR D K,MANORAMA S V.Hydrothermal synthesis of highly crystalline ZnO nanoparticles:a competitive sensor for LPG and EtOH[J].Sensors and Actuators B:Chemical,2006,119(2):676-682.
    [14] SINGH G,CHOUDHARY A,HARANATH D,et al.ZnO decorated luminescent graphene as a potential gas sensor at room temperature[J].Carbon,2012,50(2):385-394.
    [15] YI J,LEE J M,PARK W I.Vertically aligned ZnO nanorods and graphene hybrid architectures for high-sensitive flexible gas sensors[J].Sensors and Actuators B:Chemical,2011,155(1):264-269.
    [16] TIAN S,YANG F,ZENG D,et al.Solution-processed gas sensors based on ZnO nanorods array with an exposed(0001)facet for enhanced gas-sensing properties[J].The Journal of Physical Chemistry C,2012,116(19):10586-10591.
    [17] LONG H,FANG G,LI S,et al.A ZnO/ZnMgO multiple-quantum-well ultraviolet random laser diode[J].IEEE Electron Device Letters,2011,32(1):54-56.
    [18] CAO H,ZHAO Y,HO S T,et al.Random laser action in semiconductor powder[J].Physical Review Letters,1999,82(11):2278.
    [19] HUANG M H,MAO S,FEICK H,et al.Room-temperature ultraviolet nanowire nanolasers[J].Science,2001,292(5523):1897-1899.
    [20] YAN H,HE R,JOHNSON J,et al.Dendritic nanowire ultraviolet laser array[J].Journal of the American Chemical Society,2003,125(16):4728-4729.
    [21] GARGAS D J,TOIMIL-MOLARES M E,YANG P.Imaging single ZnO vertical nanowire laser cavities using UV-laser scanning confocal microscopy[J].Journal of the American Chemical Society,2009,131(6):2125-2127.
    [22] CHU S,OLMEDO M,YANG Z,et al.Electrically pumped ultraviolet ZnO diode lasers on Si[J].Applied Physics Letters,2008,93(18):181106.
    [23] KNENKAMP R,WORD R C,SCHLEGEL C.Vertical nanowire light-emitting diode[J].Applied Physics Letters,2004,85(24):6004-6006.
    [24] QIAN L,ZHENG Y,XUE J,et al.Stable and efficient quantumdot light-emitting diodes based on solution processed multilayer structures[J].Nature Photonics,2011,5(9):543-548.
    [25] SON D I,KWON B W,PARK D H,et al.Emissive ZnO-graphene quantum dots for white-light-emitting diodes[J].Nature Nanotechnology,2012,7(7):465-471.
    [26] ZHANG X,LU M,ZHANG Y,et al.Fabrication of a high brightness blue light emitting diode using a ZnO nanowire array grown on p-GaN thin film[J].Advanced Materials,2009,21(27):2767-2770.
    [27] TSUKAZAKI A,OHTOMO A,ONUMA T,et al.Repeated temperature modulation epitaxy for p-type doping and lightemitting diode based on ZnO[J].Nature Materials,2005,4(1):42-46.
    [28] LIM J H,KANG C K,KIM K K,et al.UV electroluminescence emission from ZnO light-emitting diodes grown by high-temperature radiofrequency sputtering[J].Advanced Materials,2006,18(20):2720-2724.
    [29] JIAO S,ZHANG Z,LU Y,et al.ZnO p-n junction light-emitting diodes fabricated on sapphire substrates[J].Applied Physics Letters,2006,88(3):031911.
    [30] LIU W,GU S L,YE J D,et al.Blue-yellow ZnO homostructural light-emitting diode realized by metal-organic chemical vapor deposition technique[J].Applied Physics Letters,2006,88(9):092101.
    [31] XU W Z,YE Z Z,ZENG Y J,et al.ZnO light-emitting diode grown by plasma-assisted metal organic chemical vapor deposition[J].Applied Physics Letters,2006,88(17):173506.
    [32] SUN X W,HUANG J Z,WANG J X,et al.A ZnO nanorod inorganic/organic heterostructure light-emitting diode emitting at342nm[J].Nano Letters,2008,8(4):1219-1223.
    [33]TSAI B S,CHIU H J,CHEN T H,et al.Dual-wavelength electroluminescence from an n-ZnO/p-GaN heterojunction light emitting diode[J].Applied Surface Science,2015,354:74-78.
    [34] VIKAS L S,SRUTHI C K,JAYARAJ M K.Defect-assisted tuning of electroluminescence from p-GaN/n-ZnO nanorod heterojunction[J].Bulletin of Materials Science,2015,38(4):901-907.
    [35] JUN J H,SEONG H,CHO K,et al.Ultraviolet photodetectors based on ZnO nanoparticles[J].Ceramics International,2009,35(7):2797-2801.
    [36] LIU Y,GORLA C R,LIANG S,et al.Ultraviolet detectors based on epitaxial ZnO films grown by MOCVD[J].Journal of Electronic Materials,2000,29(1):69-74.
    [37] SOCI C,ZHANG A,XIANG B,et al.ZnO nanowire UV photodetectors with high internal gain[J].Nano Letters,2007,7(4):1003-1009.
    [38] HU L F,YAN J,LIAO M Y,et al.An optimized ultraviolet-a light photodetector with wide-range photoresponse based on ZnS/ZnO biaxial nanobelt[J].Advanced Materials,2012,24(17):2305-2309.
    [39] JIN Y Z,WANG J,SUN B,et al.Solution-processed ultraviolet photodetectors based on colloidal ZnO nanoparticles[J].Nano Letters,2008,8(6):1649-1653.
    [40] CHEN M,HU L F,XU J,et al.ZnO hollow sphere nanofilm based high performance and low cost photodetector[J].Small,2011,7(17):2449-2453.
    [41] CHOU T P,ZHANG Q,FRYXELL G E,et al.Hierarchically structured ZnO film for dye sensitized solar cells with enhanced energy conversion efficiency[J].Advanced Materials,2007,19(18):2588-2592.
    [42] KO S H,LEE D,KANG H W,et al.Nanoforest of hydrothermally grown hierarchical ZnO nanowires for a high efficiency dye-sensitized solar cell[J].Nano letters,2011,11(2):666-671.
    [43] LAW M,GREENE L E,JOHNSON J C,et al.Nanowire dyesensitized solar cells[J].Nature Materials,2005,4(6):455-459.
    [44] KAKIUCHI K,HOSONO E,FUJIHARA S.Enhanced photoelectrochemical performance of ZnO electrodes sensitized with N-719[J].Journal of Photochemistry and Photobiology A:Chemistry,2006,179(1):81-86.
    [45] BEEK W J E,WIENK M M,JANSSEN R A J.Efficient hybrid solar cells from zinc oxide nanoparticles and a conjugated polymer[J].Advanced Materials,2004,16(12):1009-1013.
    [46] STRZHEMECHNY Y M.Role of defects at nanoscale ZnO and Cu(In,Ga)Se2semiconductor interfaces[J].Journal of Vacuum Science&Technology A:Vacuum,Surfaces,and Films,2006,24(4):1233-1237.
    [47]WANG Z,SONG J.Piezoelectric nanogenerators based on zinc oxide nanowire arrays[J].Science,2006,312(5771):242-246.
    [48] WANG X,SONG J,LIU J,et al.Direct-current nanogenerator driven by ultrasonic waves[J].Science,2007,316(5821):102-105.
    [49] WANG Z.Towards self-powered nanosystems:from nanogenerators to nanopiezotronics[J].Advanced Functional Materials,2008,18(22):3553-3567.
    [50] QIN Y,WANG X,WANG Z.Microfibre-nanowire hybrid structure for energy scavenging[J].Nature,2008,451(7180):809-813.
    [51] GAO P,SONG J,LIU J,et al.Nanowire piezoelectric nanogenerators on plastic substrates as flexible power sources for nanodevices[J].Advanced Materials,2007,19(1):67-72.
    [52] LI Z,WANG Z.Air/liquid-pressure and heartbeat-driven flexible fiber nanogenerators as a micro/nano-power source or diagnostic sensor[J].Advanced Materials,2011,23(1):84-89.
    [53] LU M,SONG J,LU M,et al.Piezoelectric nanogenerator using p-type ZnO nanowire arrays[J].Nano Letters,2009,9(3):1223-1227.
    [54] CHEN J,GAO Y,ZENG F,et al.Effect of sputtering oxygen partial pressures on structure and physical properties of high resistivity ZnO films[J].Applied Surface Science,2004,223(4):318-329.
    [55] EMANETOGLU N W,GORLA C,LIU Y,et al.Epitaxial ZnO piezoelectric thin films for saw filters[J].Materials Science in Semiconductor Processing,1999,2(3):247-252.
    [56] SZOT K,SPEIER W,BIHLMAYER G,et al.Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3[J].Nature Materials,2006,5(4):312-320.
    [57] HUANG C H,HUANG J S,LIN S M,et al.ZnO1-xnanorod arrays/ZnO thin film bilayer structure:from homojunction diode and high-performance memristor to complementary 1D1Rapplication[J].ACS Nano,2012,6(9):8407-8414.
    [58] JI Y,LEE S A,CHA A N,et al.Resistive switching characteristics of ZnO-graphene quantum dots and their use as an active component of an organic memory cell with one diode-one resistor architecture[J].Organic Electronics,2015,18:77-83.
    [59] QI J,OLMEDO M,REN J,et al.Resistive switching in single epitaxial ZnO nanoislands[J].ACS Nano,2012,6(2):1051-1058.
    [60] HUANG C Y,HO Y T,HUNG C J,et al.Compact Ga-doped ZnO nanorod thin film for making high-performance transparent resistive switching memory[J].IEEE Transactions on Electron Devices,2014,61(10):3435-3441.
    [61] CHIANG Y,CHANG W,HO C,et al.Single-ZnO-nanowire memory[J].IEEE Transactions on Electron Devices,2011,58(6):1735-1740.
    [62] KHURANA G,MISRA P,KUMAR N,et al.Tunable power switching in nonvolatile flexible memory devices based on graphene oxide embedded with ZnO nanorods[J].The Journal of Physical Chemistry C,2014,118(37):21357-21364.
    [63] LAI Y,QIU W,ZENG Z,et al.Resistive switching of plasmatreated zinc oxide nanowires for resistive random access memory[J].Nanomaterials,2016,6(1):16.
    [64] LEE S,KIM H,YUN D,et al.Resistive switching characteristics of ZnO thin film grown on stainless steel for flexible nonvolatile memory devices[J].Applied Physics Letters,2009,95(26):262113.
    [65] YANG Y,PAN F,LIU Q,et al.Fully room-temperature-fabricated nonvolatile resistive memory for ultrafast and high-density memory application[J].Nano Letters,2009,9(4):1636-1643.
    [66] KIM K Y,SHIM E L,CHOI Y J.Fabrication of transparent AZO/ZnO/ITO resistive random access memory devices and their ZnO active layer deposition temperature-dependent switching characteristics[J].Journal of Nanoscience and Nanotechnology,2016,16(10):10303-10307.
    [67] LIN C L,TANG C C,WU S C,et al.Impact of oxygen composition of ZnO metal-oxide on unipolar resistive switching characteristics of Al/ZnO/Al resistive RAM(RRAM)[J].Microelectronic Engineering,2015,136:15-21.
    [68] KIM M S,HWAN H Y,KIM S,et al.Effects of the oxygen vacancy concentration in InGaZnO-based resistance random access memory[J].Applied Physics Letters,2012,101(24):243503.

© 2004-2018 中国地质图书馆版权所有 京ICP备05064691号 京公网安备11010802017129号

地址:北京市海淀区学院路29号 邮编:100083

电话:办公室:(+86 10)66554848;文献借阅、咨询服务、科技查新:66554700