真空退火的CdTe/Au掺杂HgCdTe界面状态的影响
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摘要
对使用CdTe覆盖的HgCdTe材料在不同温度下进行了一系列的退火实验.研究发现,退火可以改善电子束蒸发CdTe的晶体状态,使CdTe和HgCdTe之间的界面状态得到改善.Au掺杂HgCdTe覆盖CdTe后,真空条件下退火,240℃和300℃对Au掺杂的浓度分布改变不大,Au掺杂的浓度几乎不变.但是,温度的不同会对汞空位的浓度产生显著的影响,因此退火温度不同会使载流子浓度明显不同.退火温度从240℃升高至300℃后,霍尔测试得到的载流子浓度从2×10~(16)cm~(-3)左右升高至5.5×1016cm~(-3)左右.
In this report,series of annealing experiments under different temperatures of Au-doped Hg Cd Te covered by Cd Te have been implemented. The annealing process can improve the crystal state of electron beam evaporated Cd Te layer. The interface betw een Cd Te and Hg Cd Te can also be modified. The Au doping distribution in Hg Cd Te did not change after the vacuum annealing at 240℃ and300℃. How ever,the Au element diffused into the Cd Te cap layer significantly,leading to a higher concentration of( 5 ~ 6) × 1016 cm~(-3). On the other hand,the concentration of mercury vacancy after various annealing processes w as different due to the temperature-dependent diffusion mechanism. In general,the carrier concentration measured by HALL effect varied from 2 × 10~(16) cm-3 to 5. 5 × 10~(16) cm~(-3),when the annealing temperature was increased from 240℃ to 300℃.
In this report,series of annealing experiments under different temperatures of Au-doped Hg Cd Te covered by Cd Te have been implemented. The annealing process can improve the crystal state of electron beam evaporated Cd Te layer. The interface betw een Cd Te and Hg Cd Te can also be modified. The Au doping distribution in Hg Cd Te did not change after the vacuum annealing at 240℃ and300℃. How ever,the Au element diffused into the Cd Te cap layer significantly,leading to a higher concentration of( 5 ~ 6) × 1016 cm~(-3). On the other hand,the concentration of mercury vacancy after various annealing processes w as different due to the temperature-dependent diffusion mechanism. In general,the carrier concentration measured by HALL effect varied from 2 × 10~(16) cm-3 to 5. 5 × 10~(16) cm~(-3),when the annealing temperature was increased from 240℃ to 300℃.
引文
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[10]XU Jing-Jie,CHEN Xing-Guo,ZHOU Song-Min,et al.Advanced Cd Te passivation layer deposited by evaporation on Hg Cd Te infrared detectors[J].Laser&Infrared(徐竟杰,陈兴国,周松敏,等.Hg Cd Te红外探测器Cd Te钝化蒸发生长改进.激光与红外),2012,42(11):1263-1267.
[11]Tang M F S,Stevenson D A.Interdiffusion behavior of Hg Te-Cd Te junctions[J].Applied Physics Letters,1987,50(18):1272-1274.
[2]Lu W,He L,Chen X S,et al.The development of Hg Cd Te infrared detector technology in China[C]//Infrared Technology and Applications XXXV.International Society for Optics and Photonics,2009:72982Z-72982Z-13.
[3]He K,Zhou S M,Li Y,et al.Effect of surface fields on the dynamic resistance of planar Hg Cd Te mid-wavelength infrared photodiodes[J].Journal of Applied Physics,2015,117(20):091101-297.
[4]Zhang P,Ye Z H,Sun C H,et al.Passivation effect of atomic layer deposition of Al2O3,film on Hg Cd Te infrared detectors[J].Journal of Electronic Materials,2016,45(9):4716-4720.
[5]Li Y,Hu W,Ye Z,et al.Direct mapping and characterization of dry etch damage-induced PN junction for long-wavelength Hg Cd Te infrared detector arrays.[J].Optics Letters,2017,42(7):1325-1328.
[6]Hu W,Ye Z,Liao L,et al.128×128 long-wavelength/mid-wavelength two-color Hg Cd Te infrared focal plane array detector with ultralow spectral cross talk[J].Optics Letters,2014,39(17):5184-7.
[7]Chu M,Terterian S.Au-doped Hg Cd Te for infrared detectors and focal plane arrays[J].Proceedings of SPIE-The International Society for Optical Engineering,2001:4454.
[8]Sun Q,Yang J,Wei Y,et al.Characteristics of Au Migration and Concentration Distributions in Au-Doped Hg Cd Te LPE Materials[J].Journal of Electronic Materials,2015,44(8):2773-2778.
[9]Destéfanis G L.Electrical doping of Hg Cd Te by ion implantation and heat treatment[J].Journal of Crystal Growth,1988,86(1-4):700-722.
[10]XU Jing-Jie,CHEN Xing-Guo,ZHOU Song-Min,et al.Advanced Cd Te passivation layer deposited by evaporation on Hg Cd Te infrared detectors[J].Laser&Infrared(徐竟杰,陈兴国,周松敏,等.Hg Cd Te红外探测器Cd Te钝化蒸发生长改进.激光与红外),2012,42(11):1263-1267.
[11]Tang M F S,Stevenson D A.Interdiffusion behavior of Hg Te-Cd Te junctions[J].Applied Physics Letters,1987,50(18):1272-1274.