基于SON构造的电容式绝对压力传感器设计
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摘要
针对空洞层上硅工艺在制作高质量的单晶硅感压膜和真空密封腔上的优势,提出了将其应用于制作电容式绝对压力传感器。应用板壳理论建立了传感器压力检测的理论膜型,对传感器的感压膜进行理论计算和有限元仿真,并利用电容变化模型分析了传感器的灵敏度。给出了基于Pcap01芯片的微电容检测系统的设计,对于半径为100μm,厚度为1. 7μm的圆形感压膜,初始电容值为0. 278 p F,传感器灵敏度为0. 86 f F/k Pa。
According to advantages of silicon on nothing( SON) technology in making high quality monocrystalline silicon pressure sensing diaphragm and vacuum sealed cavity,SON structure is applied in manufacture of capacitive absolute pressure sensor. Theoretical model for sensor pressure detection is established based on shell theory,and theoretical calculation and finite element simulation are performed on pressure sensing diaphragm of sensor and sensitivity of the sensor is analyzed by capacitance change model. Micro-capacitance detecting system based on Pcap01 chip is designed is given. For the pressure sensing diaphragm,whose radius is 100 μm and thickness is 1. 7 μm,the initial capacitance is 0. 278 p F,and the sensitivity of sensor is obtained to be 0. 86 f F/k Pa.
According to advantages of silicon on nothing( SON) technology in making high quality monocrystalline silicon pressure sensing diaphragm and vacuum sealed cavity,SON structure is applied in manufacture of capacitive absolute pressure sensor. Theoretical model for sensor pressure detection is established based on shell theory,and theoretical calculation and finite element simulation are performed on pressure sensing diaphragm of sensor and sensitivity of the sensor is analyzed by capacitance change model. Micro-capacitance detecting system based on Pcap01 chip is designed is given. For the pressure sensing diaphragm,whose radius is 100 μm and thickness is 1. 7 μm,the initial capacitance is 0. 278 p F,and the sensitivity of sensor is obtained to be 0. 86 f F/k Pa.
引文
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[3]周伟,秦明.基于倒装技术的电容式绝对压力传感器研究[C]∥中国微米/纳米技术学术年会,2006.
[4]张东梅,丁桂甫,汪红,等. MEMS器件气密性封装的低温共晶键合工艺研究[J].传感器与微系统,2006,25(1):82-84.
[5]王多笑,邬玉亭,褚家如.低温阳极键合技术研究[J].传感器与微系统,2005,24(9):37-39.
[6]陈颖慧,施志贵,郑英彬,等.金—硅共晶键合技术及其应用[J].纳米技术与精密工程,2015(1):69-73.
[7]王艳春,黄庆安,聂萌,等.与CMOS兼容的MEMS气压传感器工艺实现与性能分析[J].纳米技术与精密工程,2012,10(5):464-468.
[8]王帆,刘磊,陈博,等. MEMS器件深腔金属引线制备工艺研究[J].集成电路通讯,2016(2):21-24.
[9] JURCZAK M,SKOTNICKI T,PAOLI M,et al. Silicon-on-nothing(SON)—An innovative process for advanced CMOS[J]. IEEE Transactions on Electron Devices,2000,47(11):2179-2187.
[10] HAO X,TANAKA S,MASUDA A,et al. Application of silicon on nothing structure for developing a novel capacitive absolute pressure sensor[J]. IEEE Sensors Journal,2014,14(3):808-815.
[11]黄克智.板壳理论[M].北京:清华大学出版社,1987.
[12]付洁,赵晴,杨凯文,等.基于PCAP01的高精度电容测量[J].物联网技术,2014(2):27-29.
[2] YU H,QIN M. Piezoresistive pressure sensors fabricated by surface micromachining process compatible with CMOS process[J].Electronics Letters,2013,49(13):827-829.
[3]周伟,秦明.基于倒装技术的电容式绝对压力传感器研究[C]∥中国微米/纳米技术学术年会,2006.
[4]张东梅,丁桂甫,汪红,等. MEMS器件气密性封装的低温共晶键合工艺研究[J].传感器与微系统,2006,25(1):82-84.
[5]王多笑,邬玉亭,褚家如.低温阳极键合技术研究[J].传感器与微系统,2005,24(9):37-39.
[6]陈颖慧,施志贵,郑英彬,等.金—硅共晶键合技术及其应用[J].纳米技术与精密工程,2015(1):69-73.
[7]王艳春,黄庆安,聂萌,等.与CMOS兼容的MEMS气压传感器工艺实现与性能分析[J].纳米技术与精密工程,2012,10(5):464-468.
[8]王帆,刘磊,陈博,等. MEMS器件深腔金属引线制备工艺研究[J].集成电路通讯,2016(2):21-24.
[9] JURCZAK M,SKOTNICKI T,PAOLI M,et al. Silicon-on-nothing(SON)—An innovative process for advanced CMOS[J]. IEEE Transactions on Electron Devices,2000,47(11):2179-2187.
[10] HAO X,TANAKA S,MASUDA A,et al. Application of silicon on nothing structure for developing a novel capacitive absolute pressure sensor[J]. IEEE Sensors Journal,2014,14(3):808-815.
[11]黄克智.板壳理论[M].北京:清华大学出版社,1987.
[12]付洁,赵晴,杨凯文,等.基于PCAP01的高精度电容测量[J].物联网技术,2014(2):27-29.