基于谐波抑制的内匹配高效GaN功率放大器设计
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摘要
采用了内匹配技术和谐波抑制技术,设计并实现了一款3.8 GHz～4.2 GHz的功率放大器设计。该放大器采用南京电子器件研究所自主研制的的GaN HEMT管芯芯片。通过优化设计该放大器在10%的相对带宽、漏源电压28 V、10%占空比的脉冲输入的工作条件下,实现了输出峰值功率P_(out)大于40 W,漏极输出功率效率大于60%,充分显示了GaN功率器件宽带、高效和高功率的工作性能,具有广阔的工程应用前景。
The internal matching technology and the harmonic suppression technology are used to design and implemente a design of 3.8 GHz～4.2 GHz power amplifier. The amplifier was based on a GaN HEMT independently developed by Nanjing Electronic Device Institute. By optimizing the design,the amplifier achieves a peak output power(P_(out))greater than 40 W and the drain output power efficiency of the amplifier greater than 60%,under the condition of a relative bandwidth of 10%,a drain-source voltage of 28 V,and the input of 10% duty cycle pulse signal,which fully shows the GaN power device's broadband,high-efficiency,high-power performance and broad prospects for engineering applications.
The internal matching technology and the harmonic suppression technology are used to design and implemente a design of 3.8 GHz～4.2 GHz power amplifier. The amplifier was based on a GaN HEMT independently developed by Nanjing Electronic Device Institute. By optimizing the design,the amplifier achieves a peak output power(P_(out))greater than 40 W and the drain output power efficiency of the amplifier greater than 60%,under the condition of a relative bandwidth of 10%,a drain-source voltage of 28 V,and the input of 10% duty cycle pulse signal,which fully shows the GaN power device's broadband,high-efficiency,high-power performance and broad prospects for engineering applications.
引文
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[5] 孔娃,夏景,施丽娟,等.基于滤波匹配网络的连续逆F类功率放大器[J].微电子学,2017,47(4):469-472.
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[8] 斛彦生,余若祺,银军,等.S波段GaN高效率内匹配功率放大器的设计与实现[J].通讯世界,2017(12):25-26.
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[12] 孔娃,夏景,施丽娟,等.基于滤波匹配网络的连续逆F类功率放大器[J].微电子学,2017,47(4):469-472.
[2] 徐永刚,李飞,钟世昌.S波段宽带大功率内匹配器件设计[J].电子与封装,2018,183(7):44-46.
[3] 荣垂才.GaN HEMT器件建模与高效率功率放大器研究[D].电子科技大学,2017.
[4] Guan T,Yao Z,Zhao R,et al.Design of S-Band Internally Matching Power Amplifier Based on the GaN HEMT[J].Semiconductor Technology,2014:38-41,77.
[5] 孔娃,夏景,施丽娟,等.基于滤波匹配网络的连续逆F类功率放大器[J].微电子学,2017,47(4):469-472.
[6] Saad P,Fager C,Cao H,et al.Design of a Highly Efficient 2-4-GHz Octave Bandwidth GaN-HEMT Power Amplifier[J].IEEE Transactions on Microwave Theory and Techniques,2010,58(7):1677-1685.
[7] Wu D,Mkadem F,Boumaiza S.Design of a Broadband and Highly Efficient 45 W GaN Power Amplifier via Simplified Real Frequency Technique[P].Microwave Symposium Digest(MTT),2010 IEEE MTT-S International,2010.
[8] 斛彦生,余若祺,银军,等.S波段GaN高效率内匹配功率放大器的设计与实现[J].通讯世界,2017(12):25-26.
[9] 马东艺.S波段基于GaN HEMT的宽带内匹配高功率器件的研制[D].上海:复旦大学,2014.
[10] Reinhold Ludwig.射频电路设计理论及应用[M].北京:电子工业出版社,2002:270-353.
[11] Inder J Bahl.射频与微波晶体管放大器基础[M].北京:电子工业出版社,2013:200-224.
[12] 孔娃,夏景,施丽娟,等.基于滤波匹配网络的连续逆F类功率放大器[J].微电子学,2017,47(4):469-472.