摘要
设计了一款GaAs赝配高电子迁移率晶体管(PHEMT)单片微波集成正电压控制开关。该电路设计采用片上集成隔直电容,对传统负电压控制开关的拓扑结构进行改进。针对PHEMT开关低频(0.1 GHz)下1 dB压缩点输入功率(P_(i(1 dB)))陡降问题进行分析,提出了改进栅极输入阻抗的方法,有效提高了PHEMT开关低频下的P_(i(1 dB))。采用中国电子科技集团公司第十三研究所0.25μm GaAs PHEMT工艺进行了仿真和流片,芯片的面积为1.0 mm×1.0 mm。测试结果表明,在频率为0.1~4 GHz内,插入损耗小于0.8 dB,隔离度大于42 dB,P_(i(1 dB))大于15 dBm。控制电压为0 V/5 V。该款GaAs PHEMT微波单片集成正电压控制开关设计全部达到了预期性能,并实现了改善低频下的P_(i(1 dB))的目标。
A GaAs pseudomorphic high electron mobility transistor(PHEMT) monolithic microwave integrated positive voltage controlled switch was designed. The on-chip integrated isolated capacitance was adopted to improve the topology structure of the traditional negative voltage controlled switch. Based on the analysis of the steep drop of the 1 dB compression point input power(P_(i(1 dB)))of the PHEMT switch at low frequency(0.1 GHz), a method to improve the gate input impedance was proposed, which effectively improved the low frequency P_(i(1 dB)) of the PHEMT switch. Using the 0.25 μm GaAs PHEMT process of the 13~(th) Research Institute of CETC, the SPDT switch MMIC was simulated and fabricated with an area of 1.0 mm×1.0 mm. The test results show that in the frequency range of 0.1-4 GHz, the insertion loss is less than 0.8 dB, the isolation is greater than 42 dB, the P_(i(1 dB)) is greater than 15 dBm. The controlling voltage is 0 V/5 V. The design of the GaAs PHEMT monolithic microwave positive voltage controlled switch achieves the desired performance and the goal of improving the low frequency P_(i(1 dB)).
引文
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