Improvement on the magneto-optical Kerr effect of cobalt film with a quadrilayer structure
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  • 英文篇名:Improvement on the magneto-optical Kerr effect of cobalt film with a quadrilayer structure
  • 作者:张绍银 ; 唐少龙 ; 高锦龙 ; 罗晓婧 ; 夏文斌 ; 都有为
  • 英文作者:Zhang Shao-Yin a)b) , Tang Shao-Long a) , Gao Jin-Long a) , Luo Xiao-Jing a) , Xia Wen-Bin a) , and Du You-Wei a)a) National Laboratory of Solid State Microstructure and Physics Department, Nanjing University, Nanjing 210093, China b) School of Science, Institute of Condensed Matter Physics, Linyi University, Linyi 276005, China
  • 英文关键词:resonant optical cavity, magneto-optical effects, magneto-optical recording
  • 中文刊名:ZGWL
  • 英文刊名:中国物理B
  • 机构:National Laboratory of Solid State Microstructure and Physics Department, Nanjing University;School of Science, Institute of Condensed Matter Physics, Linyi University;
  • 出版日期:2013-06-26 13:16
  • 出版单位:Chinese Physics B
  • 年:2013
  • 期:v.22
  • 基金:supported by the National Key Project of Fundamental Research of China(Grant Nos.2012CB932304 and 2010CB923404);; the National Natural Science Foundation of China(Grant Nos.50971070 and U1232210);; the Priority Academic Program Development of Jiangsu Higher Education Institutions
  • 语种:英文;
  • 页:ZGWL201308093
  • 页数:5
  • CN:08
  • ISSN:11-5639/O4
  • 分类号:662-666
摘要
The magneto-optical Kerr effect of the HfO2 /Co/HfO2 /Al multilayer structure is investigated in this work, and an obvious cavity enhancement of the Kerr response for the HfO2 semiconductor is found both theoretically and experimentally. Surprisingly, a maximum value of about -3 ° of the polar Kerr rotation for s-polarized incident light is observed in our experiment. We propose that this improvement on the Kerr effect can be attributed to the multiple reflection and optical interference in the cavity, which can also be proved by simulation using the finite element method.
        The magneto-optical Kerr effect of the HfO2 /Co/HfO2 /Al multilayer structure is investigated in this work, and an obvious cavity enhancement of the Kerr response for the HfO2 semiconductor is found both theoretically and experimentally. Surprisingly, a maximum value of about -3 ° of the polar Kerr rotation for s-polarized incident light is observed in our experiment. We propose that this improvement on the Kerr effect can be attributed to the multiple reflection and optical interference in the cavity, which can also be proved by simulation using the finite element method.
引文
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