GaAs/AlGaAs多量子阱探测器研究现状与应用
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摘要
历经30余载的发展,量子阱红外探测器(QWIP)已取得长足发展和丰硕成果。对量子阱红外探测器的发展历程、研究现状进行简单的介绍,并将其量子效率η、暗电流和探测率D*等性能参数与传统的HgCdTe红外探测器的性能参数进行比较。此外,也简单介绍了下目前发展较为成熟的GaAs/AlGaAs量子阱红外焦平面阵列探测器。最后,结合国内外的发展现状,对未来QWIP的发展方向以及降低生产成本、降低商用门槛提出了一些自己的构想。
After more than 30 years of development,the quantum well infrared detector( QWIP) has made great progress and fruitful results. The development process and research status of quantum well infrared detector are introduced briefly,and the performance of Hg Cd Te infrared detectors such as quantum efficiency η,dark current and detection rate D* are compared with it. Besides,the maturer Ga As/Al Ga As quantum well infrared focal plane array detector has been described. Finally,combined with the development of the research status at home and abroad,some advice are put forward to the future development direction of QWIP,reducing production costs and the commercial threshold.
After more than 30 years of development,the quantum well infrared detector( QWIP) has made great progress and fruitful results. The development process and research status of quantum well infrared detector are introduced briefly,and the performance of Hg Cd Te infrared detectors such as quantum efficiency η,dark current and detection rate D* are compared with it. Besides,the maturer Ga As/Al Ga As quantum well infrared focal plane array detector has been described. Finally,combined with the development of the research status at home and abroad,some advice are put forward to the future development direction of QWIP,reducing production costs and the commercial threshold.
引文
[1]周佳伟,高爱华.量子阱红外探测器性能参数测试技术研究[D].西安工业大学.2009.
[2]陆卫,李宁,甄红楼,等.红外光电子学中的新族——量子阱红外探测器[J].中国科学:G辑:物理学力学天文学.2009,(3):336-343.
[3]HUNG Wan-Ching,ZHANG Jie.Quantum Well Infrared Detectors[J].University of Rochester,Rochester,2008,(7):805-812.
[4]ROGALSKI A.Quantum well photoconductors in infrared technology[J].Journal of App Phy,2014,8(3):203-211.
[5]MEIMEI Z.Tidrow.Device physics and state-of-the-art of quantum well infrared photodetectors and arrays[J],2010,9(10):45-51.
[6]殷菲.碲镉汞红外探测功能结构的光电性能研究[D].上海:中国科学院上海技术物理研究所,2010,2(6):255-263.
[7]SHENG S.LI Multi-color,broadband quantum well infrared photodetectors for mid-,long-,and very long-wavelength infrared applications[J].2016,9(2):160-168.
[8]SARATH D.Gunapala et al.Large format Long-Wavelength Ga As/Al Ga As Multi-Quantum Well infrared detector for astronomy[J].IEEE 3-1437,2012,8:362-370.
[9]SARATH D.Gunapala et al.Ga As/Al Ga As multi-quantum-well based far infrared detectors for astronomy application[J].2015,11(2):201-213.
[10]陆卫,刘昭麟,甄红楼.红外-近红外波长上转换探测器[P].2006,6(30).
[11]陈效双,许娇,胡伟达,等.长波Hg Cd Te红外探测器的暗电流机理研究进展[J].红外技术.2015,(5):353-360.
[12]SERGE LURYI,ALEXANDER KASTALSKY,JOHN C.BEAN.New Infrared Detector on a Silicon Chip[J].IEEE Transactions on Electron Devices,2016,7(31).1135-1139.
[13]葛文奇.红外探测技术的进展、应用及发展趋势[J].光机电信息.2007,(4):33-37.
[14]ROGALSKI.A.Hg Cd Te infrared detector material:history,status and outlook[J].Institute of Applied Physics,2015.9:2268-2336.
[15]SARATH D.Gunapala,SUMITH V.Bandara John K.Liu,Jason M.Mumolo,Sir B.Rafol,David Z.Ting,John K.Liu,Jason M.Mumolo,Sir B.Rafol.Quantum Well Infrared Photodetector Technology and Applications.2014,12(6):203-210.
[16]RAFOL,S.B.E.Cho,Lim W.,Characterization of very large format 1K×1K LWIR QWIP focal plane array[J].Proc.SPIE,vol.6678,2017,2:1101-1123
[17]ROBO J.A.,COSTARD E.,TRUFFER J.P.,NEDELCU A.,MARCADET X.,BOIS P.,QWIP focal plane arrays performances from MWIR up to VLWIR[J].Proc.SPIE,2009,5(5):351-360.
[18]ROGALSKI A..Infrared detectors:An overview[J].Infra.Phys.&Tech,2015,8(5):187-210.
[19]MUKUL K.Das,Md.Aref Billaha.Bound-to-Continuum Transition in Ga As/Al Ga As QWIP[J].Applied Electronics and Instrumentation Engineering,2014,8:202-210.
[20]XIONG D.Y.,GUO F.M.,ZHANG W.E..Study on the performance of Nano-optoelectronics device:In Ga As/Ga As VLW-QWIP[J].IEEE J-SAC,2013,4(2):260-266.
[21]MD.Aref Billaha,MUKUL K.Das.Performance Analysis of III-V Based Long Wavelength QWIP.IEEE J-SAC,2016,4(13):126-133.
[22]ARVIND P.Ravikumar,CHEN Guopeng,ZHAO Kuaile,TIAN Yue,Paul Prucnal,Maria C.Tamargo,Claire F.Gmachl,and Aidong Shen.Room Temperature and High Responsivity Short Wavelength II-VI Quantum Well Infrared Photodetector[J].Optical Society of America,2015,2(13):751-766.
[2]陆卫,李宁,甄红楼,等.红外光电子学中的新族——量子阱红外探测器[J].中国科学:G辑:物理学力学天文学.2009,(3):336-343.
[3]HUNG Wan-Ching,ZHANG Jie.Quantum Well Infrared Detectors[J].University of Rochester,Rochester,2008,(7):805-812.
[4]ROGALSKI A.Quantum well photoconductors in infrared technology[J].Journal of App Phy,2014,8(3):203-211.
[5]MEIMEI Z.Tidrow.Device physics and state-of-the-art of quantum well infrared photodetectors and arrays[J],2010,9(10):45-51.
[6]殷菲.碲镉汞红外探测功能结构的光电性能研究[D].上海:中国科学院上海技术物理研究所,2010,2(6):255-263.
[7]SHENG S.LI Multi-color,broadband quantum well infrared photodetectors for mid-,long-,and very long-wavelength infrared applications[J].2016,9(2):160-168.
[8]SARATH D.Gunapala et al.Large format Long-Wavelength Ga As/Al Ga As Multi-Quantum Well infrared detector for astronomy[J].IEEE 3-1437,2012,8:362-370.
[9]SARATH D.Gunapala et al.Ga As/Al Ga As multi-quantum-well based far infrared detectors for astronomy application[J].2015,11(2):201-213.
[10]陆卫,刘昭麟,甄红楼.红外-近红外波长上转换探测器[P].2006,6(30).
[11]陈效双,许娇,胡伟达,等.长波Hg Cd Te红外探测器的暗电流机理研究进展[J].红外技术.2015,(5):353-360.
[12]SERGE LURYI,ALEXANDER KASTALSKY,JOHN C.BEAN.New Infrared Detector on a Silicon Chip[J].IEEE Transactions on Electron Devices,2016,7(31).1135-1139.
[13]葛文奇.红外探测技术的进展、应用及发展趋势[J].光机电信息.2007,(4):33-37.
[14]ROGALSKI.A.Hg Cd Te infrared detector material:history,status and outlook[J].Institute of Applied Physics,2015.9:2268-2336.
[15]SARATH D.Gunapala,SUMITH V.Bandara John K.Liu,Jason M.Mumolo,Sir B.Rafol,David Z.Ting,John K.Liu,Jason M.Mumolo,Sir B.Rafol.Quantum Well Infrared Photodetector Technology and Applications.2014,12(6):203-210.
[16]RAFOL,S.B.E.Cho,Lim W.,Characterization of very large format 1K×1K LWIR QWIP focal plane array[J].Proc.SPIE,vol.6678,2017,2:1101-1123
[17]ROBO J.A.,COSTARD E.,TRUFFER J.P.,NEDELCU A.,MARCADET X.,BOIS P.,QWIP focal plane arrays performances from MWIR up to VLWIR[J].Proc.SPIE,2009,5(5):351-360.
[18]ROGALSKI A..Infrared detectors:An overview[J].Infra.Phys.&Tech,2015,8(5):187-210.
[19]MUKUL K.Das,Md.Aref Billaha.Bound-to-Continuum Transition in Ga As/Al Ga As QWIP[J].Applied Electronics and Instrumentation Engineering,2014,8:202-210.
[20]XIONG D.Y.,GUO F.M.,ZHANG W.E..Study on the performance of Nano-optoelectronics device:In Ga As/Ga As VLW-QWIP[J].IEEE J-SAC,2013,4(2):260-266.
[21]MD.Aref Billaha,MUKUL K.Das.Performance Analysis of III-V Based Long Wavelength QWIP.IEEE J-SAC,2016,4(13):126-133.
[22]ARVIND P.Ravikumar,CHEN Guopeng,ZHAO Kuaile,TIAN Yue,Paul Prucnal,Maria C.Tamargo,Claire F.Gmachl,and Aidong Shen.Room Temperature and High Responsivity Short Wavelength II-VI Quantum Well Infrared Photodetector[J].Optical Society of America,2015,2(13):751-766.