摘要
通过低温水热法,在经退火处理的钛片上制备高比例{001}晶面择优的锐钛矿型TiO_2薄膜。采用扫描电镜(SEM)和X射线衍射仪(XRD),研究分析不同水热条件对二氧化钛薄膜生长的影响。结果表明:在40~80℃升高反应温度,能促进晶体取向附着,有利于纳米晶在[001]方向上择优生长;适当延长反应时间,能有效促进纳米二氧化钛薄膜的结晶度和(001)晶面的择优。在钛基底上原位生长具有高比例(001)晶面择优的锐钛矿型二氧化钛薄膜具有两种不同的生长机制,[001]晶向的择优生长及(001)晶面的择优曝露,可以通过控制反应温度和反应时间等实验参数实现对二氧化钛纳米薄膜的控制。
The anatase thin film with high proportion {001} facets preferred was prepared by low temperature hydrothermal method. The effects of different reaction conditions on the growth of anatase films were studied by scanning electron microscopy(SEM) and X-ray diffractometer(XRD). It was concluded that, increasing the reaction temperature within 40-80 ℃ range could promote the oriented attachment of the crystals, and resulted in preferable growth along [001] direction; Appropriate extension of reaction time could improve the deposition of the crystalline TiO_2, and enhanced the preferential orientation of {001} facets. It could be explained by two different growth mechanisms, the preferable growth along [001] direction and the preferential exposure of {001} facets. The controllable deposition of TiO_2 films could be achieved by adjusting the reaction temperature and reaction time.
引文
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