基于GaN工艺S波段高功率放大模块的设计
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摘要
随着无线通信、雷达等领域的高速发展,微波产品尤其是功率放大模块呈现出高功率、低功耗、轻量化、小型化、易使用的发展趋势,这就要求功率放大器具备更高的效率以及更高的工作结温,基于新一代宽禁带半导体材料,Ga N功率放大器能够满足该需求。该文采用CREE公司的Ga N功放管CGH40010F研制了一款S波段高功率放大模块,包括模块各部分电路设计及结构盒体设计。测试结果显示,在2.2～2.4GHz带宽内增益≥40dB,饱和输出功率≥10W,工作效率≥50%。。
With the rapid development of wireless communication and radar system,microwave devices espe-cially the power amplifier modules have a trend of high output power,low consumed power,light weight,minia-turization,and available on application.Therefore,higher efficiency and higher channel temperature are requir-ed for power amplifier.Based on the new generation of wide bandgap semiconductor material,GaN based power amplifier can be competitive candidates in power amplification.GaN bare device CGH40010 provided by Triquint was used in this paper.A S band high output power amplifier was designed and fabricated,includ-ing circuit and structure design.The measured results show that the power amplifier can work in a 2.2-2.4 GHz frequency range with a linear gain larger than 40 d B.The saturated output power is larger than 10 W and the maximum power added efficiency(PAE) of each frequency are larger than 50%.
With the rapid development of wireless communication and radar system,microwave devices espe-cially the power amplifier modules have a trend of high output power,low consumed power,light weight,minia-turization,and available on application.Therefore,higher efficiency and higher channel temperature are requir-ed for power amplifier.Based on the new generation of wide bandgap semiconductor material,GaN based power amplifier can be competitive candidates in power amplification.GaN bare device CGH40010 provided by Triquint was used in this paper.A S band high output power amplifier was designed and fabricated,includ-ing circuit and structure design.The measured results show that the power amplifier can work in a 2.2-2.4 GHz frequency range with a linear gain larger than 40 d B.The saturated output power is larger than 10 W and the maximum power added efficiency(PAE) of each frequency are larger than 50%.
引文
[1]王帅,陈堂胜,张斌,等.7.5~9.5GHz Al Ga N/Ga NHEMT内匹配微波功率管[J].固体电子学研究与进展2007,27(2):159-162,206.
[2]Thompson R,Prunty T,Kaper V,et al.Performance of the Al Ga N HEMT structure with a gate extension[J].IEEETransactions on Electron Devices,2004,51(2):292-295.
[3]夏磊.基于Ga N器件射频功率放大电路的设计[D].南京:南京理工大学,2010.
[4]Inder Bahl,Prakash Bhartia.微波固态电路设计(第二版)[M].郑新,赵玉洁,刘永宇,等,译.北京:电子工业出版社,2006.
[2]Thompson R,Prunty T,Kaper V,et al.Performance of the Al Ga N HEMT structure with a gate extension[J].IEEETransactions on Electron Devices,2004,51(2):292-295.
[3]夏磊.基于Ga N器件射频功率放大电路的设计[D].南京:南京理工大学,2010.
[4]Inder Bahl,Prakash Bhartia.微波固态电路设计(第二版)[M].郑新,赵玉洁,刘永宇,等,译.北京:电子工业出版社,2006.