摘要
在空气中对钼基底进行退火处理,在钼表面形成MoO_3薄层.该MoO_3薄膜能有效抑制过厚Mo(S,Se)_2的形成.研究发现, MoO_3厚度随着温度的升高而增大,其中350°C形成的MoO_3厚度最为合适,既能够有效降低Mo(S,Se)_2的厚度,又不影响吸收层和钼电极接触,器件最高效率达到10.58%.这种方法不会引入其他杂质元素,操作简单方便.
In-situ prepared MoO_3 thin layer has been introduced to suppress the formation of too thick Mo(S,Se)_2layer in Cu_2ZnSnS_xSe_(4–x)(CZTSSe) solar cells. This MoO_3 layer effectively improves the back interfacial contact between CZTSSe absorber layer and Mo substrate without poisoning the carrier transport. Up to 10.58% power conversion efficiency has been achieved.
引文
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