射频功率和沉积压强对富硅-SiN_x薄膜微结构的影响
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摘要
基于等离子体增强化学气相沉积(PECVD)技术,以硅烷和高纯氮气作为反应气体源,分别设置射频功率为50,80,110,140,170 W和沉积压强为200,250,300,350,400 Pa两组参数沉积富硅-SiNx薄膜.结果表明,薄膜的致密性和沉积速率与射频功率和沉积压强都有关系,射频功率的增加导致光学带隙值变大,而光学带隙值与沉积压强成非线性关系,其二者的光学带隙值均在硅与Si_3N_4薄膜的光学带隙值之间.射频功率的增加,导致反应室中N—N键断裂更加完全,与硅原子结合形成大量的Si—N键,而薄膜中的Si原子含量降低,导致薄膜中含氮量增加,且样品薄膜中Si_3N_4晶粒尺寸增加,表明该条件下沉积得到的是富硅-SiN_x薄膜.
The Si-rich SiNxfilms were deposited using radio frequency(RF) power of 50,80,110,140 and 170 W under the deposition pressure of 200,250,300,350,400 Pa,respectively,based on the plasma enhanced chemical vapor deposition(PECVD) system,in which high purity silane and nitrogen were used as reaction gases. The results show that the compactness and deposition rate of the films are related to the RF power and deposition pressure. It is important that the increase of the RF power leads to the increase of the optical band gap value,while the optical band gap value has a non-linear relationship with the deposition pressure. The optical band gap values of both films are between the optical band gap values of silicon and Si3 N4 films. With the increase of the RF power,the N—N bond breaks completely in the reaction chamber,and a large number of Si—N bonds are formed by bonding with Si atoms,while the decrease of the content of Si atoms results in the increase of nitrogen content and Si3 N4 grain size in the films,indicating that the Si-rich SiNxfilms were deposited under this condition.
The Si-rich SiNxfilms were deposited using radio frequency(RF) power of 50,80,110,140 and 170 W under the deposition pressure of 200,250,300,350,400 Pa,respectively,based on the plasma enhanced chemical vapor deposition(PECVD) system,in which high purity silane and nitrogen were used as reaction gases. The results show that the compactness and deposition rate of the films are related to the RF power and deposition pressure. It is important that the increase of the RF power leads to the increase of the optical band gap value,while the optical band gap value has a non-linear relationship with the deposition pressure. The optical band gap values of both films are between the optical band gap values of silicon and Si3 N4 films. With the increase of the RF power,the N—N bond breaks completely in the reaction chamber,and a large number of Si—N bonds are formed by bonding with Si atoms,while the decrease of the content of Si atoms results in the increase of nitrogen content and Si3 N4 grain size in the films,indicating that the Si-rich SiNxfilms were deposited under this condition.
引文
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[15]夏冬林,徐俊,刘俊,等.硫化时间对Cu In S2薄膜微结构的影响[J].人工晶体学报,2012,(1):20-23.
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[3]乌仁图雅,周炳卿,张林睿,等.氢流量对富硅-氮化硅薄膜键结构及光学性质的影响[J].人工晶体学报,2015,44(12):3449-3454.
[4]王强.薄膜太阳电池工艺与技术[M].辽宁大学出版社,2011.
[5]高爱明,周炳卿,张林睿,等.氮流量对热丝制备富硅-氮化硅薄膜的结构及性质影响[J].信息记录材料,2016,17(1):53-58.
[6]李俊鸿.异质结及其技术在新型硅基太阳能电池中的应用[J].科技展望,2017,(4):163.
[7]沈峰,夏冬林,李蔚,等.沉积功率对多晶硅薄膜结构和光学性质的影响[J].武汉理工大学学报,2007,29(增刊1):172-175.
[8] Li T,Jerzy K,Kong W,et al. Interference Fringe-free Transmission Spectroscopy of Amorphous Thin Films[J].J Appl Phys,2000,88(10):5764-5771.
[9]孙科沸,李子全,李鑫.衬底温度对射频磁控溅射制备氮化硅薄膜的影响[J].半导体技术,2006,(6):516-519.
[10]张龙龙,周炳卿,张林睿,等. PECVD制备富硅氮化硅薄膜的工艺条件及其性质的研究[J]. 2014,33(4):757-763.
[11]邵宇光.射频等离子体化学气相沉积制备硅基发光薄膜的过程和性能研究[D].上海:东华大学,2011.
[12]姜礼华.含硅量子点SiNx薄膜特性及其在太阳能电池中的应用[D].武汉:华中科技大学,2012.
[13]林圳旭,宋捷,王岩,等.快速热退火增强非晶Si CxOy薄膜蓝绿光发射特性研究[J].南京大学学报(自然科学版),2017,(3):428-433.
[14] Lanford W A,Rand M J. The hydrogen content of plasma-deposited silicon nitride[J]. Journal of Applied Physics,1978,49(4):2473-2477.
[15]夏冬林,徐俊,刘俊,等.硫化时间对Cu In S2薄膜微结构的影响[J].人工晶体学报,2012,(1):20-23.
[16] Panchal A K,Solanki C S. Post deposition annealing temperature effect on silicon quantum dots embedded in silicon nitride dielec-tric multilayer prepared by hot-wire chemical vapor deposition[J]. Thin Solid Films,2009,517(2):3488-3491.