一种高性能曲率补偿带隙基准源的设计
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摘要
在传统带隙基准的基础上,利用曲率补偿和预稳压结构,设计了一种高性能带隙基准源。利用MOS管在亚阈值区域时的指数特性,对基准电压进行曲率补偿,使用预稳压结构提高电源抑制能力。该电路结构简单,实现了较宽的电压输入范围(2.5~10V)。在UMC 0.25μm BCD工艺上进行仿真,结果表明,电源电压为2.5~10V,基准电压变化峰峰值为142μV;温度在-40℃~150℃内,电路的温度系数为8.0×10~(-7)/℃;低频时,电源抑制比为-95dB;电源电压为5V时,静态功耗电流为10.4μA。
A high performance bandgap reference was designed,which was based on the traditional bandgap reference structure.It took advantage of the curvature compensation technique and the pre-regulator technique.The drain current had exponential characteristic when the MOS transistor was working at the sub-threshold region.It used the drain current to compensate the temperature characteristic curve of the reference.The circuit was simulated through the UMC 0.25μm BCD process.The simulation result showed that the change amplitude was 142μV when the power supply changed from 2.5Vto 10 V.The temperature coefficient was 8.0×10~(-7)/℃ at the temperature range from-40℃to 150℃.The PSRR was-95 dB at the low frequency.The quiescent current was 10.4μA at apower supply of 5V.
A high performance bandgap reference was designed,which was based on the traditional bandgap reference structure.It took advantage of the curvature compensation technique and the pre-regulator technique.The drain current had exponential characteristic when the MOS transistor was working at the sub-threshold region.It used the drain current to compensate the temperature characteristic curve of the reference.The circuit was simulated through the UMC 0.25μm BCD process.The simulation result showed that the change amplitude was 142μV when the power supply changed from 2.5Vto 10 V.The temperature coefficient was 8.0×10~(-7)/℃ at the temperature range from-40℃to 150℃.The PSRR was-95 dB at the low frequency.The quiescent current was 10.4μA at apower supply of 5V.
引文
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[10]OSIPOV D.2.2 ppm/℃bandgap voltage reference with high-order temperature compensation[C]∥IEEE Int Conf Appl Elec.Pilsen,Czekh.2014:239-242.
[2]BENDALI A,AUDET Y.A 1-V CMOS current reference with temperature and process compensation[J].IEEE Trans Circ&Syst I:Regu Pap,2007,54(7):1424-1429.
[3]DUAN Q,ROH J.A 1.2-V 4.2-ppm/℃high-order curvature-compensated CMOS bandgap reference[J].IEEE Trans Circ&Syst I:Regu Pap,2015,62(3):662-670.
[4]GRAY P R,MEYER R G,HURST P J,et al.Analysis and design of analog integrated circuits[M].New York:John Wiley&Sons,2001.
[5]VITTOZ E,FELLRATH J.CMOS analog integrated circuits based on weak inversion operations[J].IEEE J Sol Sta Circ,1977,12(3):224-231.
[6]TSIVIDIS Y P,ULMER R W.A CMOS voltage reference[J].IEEE J Sol Sta Circ,1978,13(6):774-778.
[7]CHENG Y,HU C.MOSFET modeling and Bsim3user’s guide[M].Norwell:Kluwer Academic Publishers,1999:124-125.
[8]ZHANG K,WU D.A high performance bandgap voltage reference design[C]∥2nd Int Conf Inform Sci&Engineer.Hangzhou,China.2010:4838-4841.
[9]ZHOU Z K,XU X Z,SHI Y,et al.A highperformance bandgap reference with advanced curvature-compensation[C]∥IEEE 9th Int Conf ASICON.Xiamen,China.2011:524-527.
[10]OSIPOV D.2.2 ppm/℃bandgap voltage reference with high-order temperature compensation[C]∥IEEE Int Conf Appl Elec.Pilsen,Czekh.2014:239-242.