基于iOS的高速存储电路设计与实现
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摘要
为了解决iOS移动设备外部存储器件传输速度及存储容量的问题,设计了一套适用iOS的外设高速存储电路。通过采用兼容USB2.0的数据高速传输和处理技术USB3.1标准,以提高传输速度;使用Flash Raid技术进行读写管理,将NAND和eMMC Flash芯片的数据并行传输和管理技术进行集成,实现双Flash芯片同步读写的双通道数据高速传输与存储,并内置多种容错机制。实验结果表明,重新设计的高速存储电路可适应和扩展外设存储容量,还可提升读写速度,其在iOS端的读写速度达到25, 16 MB/s,实现了iOS移动设备外部存储高速传输与存储目的。
In view of the de?ciency found in the transmission speed and storage capacity of the external storage device of iOS mobile devices, a set of peripheral high-speed memory circuits suitable for iOS has been designed. By adopting the high-speed data transmission processing technology that meets USB3.1 standard requirement, which is also compatible with USB 2.0 standard, the transmission speed can be improved. Flash Raid management technology is to be applied for the integration of NAND and eMMC Flash chip data parallel transmission management, thus realizing the high-speed transmission and storage of dual-channel data with dual Flash chips reading and writing synchronously,as well as built-in multiple fault-tolerant mechanisms. The experimental results show that the redesigned high-speed storage circuit can adapt and expand the peripheral storage capacity, and improve the speed of speaking, reading and writing on the iOS terminal, with a speed as high as 25, 16 MB/s, thus achieving the purpose of high-speed transmission and storage of external storage in iOS mobile devices.
In view of the de?ciency found in the transmission speed and storage capacity of the external storage device of iOS mobile devices, a set of peripheral high-speed memory circuits suitable for iOS has been designed. By adopting the high-speed data transmission processing technology that meets USB3.1 standard requirement, which is also compatible with USB 2.0 standard, the transmission speed can be improved. Flash Raid management technology is to be applied for the integration of NAND and eMMC Flash chip data parallel transmission management, thus realizing the high-speed transmission and storage of dual-channel data with dual Flash chips reading and writing synchronously,as well as built-in multiple fault-tolerant mechanisms. The experimental results show that the redesigned high-speed storage circuit can adapt and expand the peripheral storage capacity, and improve the speed of speaking, reading and writing on the iOS terminal, with a speed as high as 25, 16 MB/s, thus achieving the purpose of high-speed transmission and storage of external storage in iOS mobile devices.
引文
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[10]周珍龙,顾彤,王红兵.FPGA的eMMC嵌入式阵列存储系统设计[J].单片机与嵌入式系统应用,2016,16(4):36-39.ZHOU Zhenlong,GU Tong,WANG Hongbing.eMMCEmbedded Array Storage System Based on FPGA[J]Microcontrollers&Embedded Systems,2016,16(4):36-39.
[2]CAI Y,GHOSE S,LUO Y X,et al.Vulnerabilities in MLC NAND Flash Memory Programming:Experimental Analysis,Exploits,and Mitigation Techniques[C]//2017 IEEE International Symposium on High Performance Computer Architecture(HPCA)Austin:IEEE,2017:49-60.
[3]李晴.高速大容量NAND FLASH存储系统的设计与实现[D].北京:北京理工大学,2015.LI Qing.The Design and Realization of a High Speed and Large Capacity NAND FLASH Storage System[D].Beijing:Beijing Institute of Technology,2015.
[4]周之丽.基于Nand Flash的大容量存储装置的设计与研究[D].太原:中北大学,2015.ZHOU Zhili.The Design and Research of Large-Capacity Device Based on Nand Flash[D].Taiyuan:North University of China,2015.
[5]王凯,王笑强.基于e MMC芯片安卓智能手机数据直读技术研究[J].信息安全研究,2016,2(4):317-323.WANG Kai,WANG Xiaoqiang.Research on Data Reading Technology of Android Smart Phone Based on eMMC[J].Journal of Information Securyity Research2016,2(4):317-323.
[6]刘宝文.基于eMMC的高速大容量存储卡研制[D].哈尔滨:哈尔滨工业大学,2015.LIU Baowen.Development of High-Speed and LargeCapicity Storage Card Based on eMMC[D].Harbin:Harbin Institute of Technology,2015.
[7]秦国杰,谢民,高梅国,等.基于内外两级并行的多通道闪存存储系统设计[J].北京理工大学学报,2013,33(8):841-847.QIN Guojie,XIE Min,GAO Meiguo,et al.MultiChannel Flash Storage System Using Two-Level Parallel Accessing Method[J].Transactions of Beijing Institute of Technology,2013,33(8):841-847.
[8]任海,刘伟亮,唐振刚,等.一种高效的星载高速固态存储器坏块管理算法[J].计算机测量与控制,2018,26(1):242-247.REN Hai,LIU Weiliang,TANG Zhengang,et al.An Efficient Bad Block Management Algorithm of Space Borne High-Speed Solid State Memory[J].Computer Measurement&Control,2018,26(1):242-247.
[9]高阳,王代华,王晓楠.存储测试系统中FLASH的存储可靠性技术研究[J].现代电子技术,2017,40(18):131-134,138.GAO Yang,WANG Daihua,WANG Xiaonan.Research on Stored Reliability Technology of FLASH in Storage Testing System[J].Modern Electronic Technique,2017,40(18):131-134,138.
[10]周珍龙,顾彤,王红兵.FPGA的eMMC嵌入式阵列存储系统设计[J].单片机与嵌入式系统应用,2016,16(4):36-39.ZHOU Zhenlong,GU Tong,WANG Hongbing.eMMCEmbedded Array Storage System Based on FPGA[J]Microcontrollers&Embedded Systems,2016,16(4):36-39.