9～15 GHz GaAs E-PHEMT高性能线性功率放大器
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摘要
基于0.15μm GaAs增强型赝配高电子迁移率晶体管(E-PHEMT)工艺,研制了一款用于5G通信和点对点传输的高性能线性功率放大器单片微波集成电路(MMIC)。采用栅宽比为1∶4.4的两级放大结构保证了电路的增益和功率指标满足要求;基于大信号模型实现了最优输入输出阻抗匹配;采用电磁场仿真技术优化设计的MMIC芯片尺寸为2.5 mm×1.1 mm。芯片的在片测试结果表明,静态直流工作点为最大饱和电流的35%、漏压为5 V的条件下,在9~15 GHz频率内,MMIC功率放大器小信号增益大于20 dB,1 dB压缩点输出功率不小于27 dBm,功率附加效率不小于35%,功率回退至19 dBm时三阶交调不大于-37 dBc。
Based on the 0. 15 μm Ga As enhancement-mode pseudomorphic high electron mobility transistor( E-PHEMT) process,a high performance linear power amplifier monolithic microwave integrated circuit( MMIC) used for 5G communication and point-to-point transmission was designed and fabricated. The two-stage amplification structure with a gate width ratio of 1 ∶ 4. 4 ensured the gain and power of the circuit. The optimal match of the input and output impedance was achieved based on the large-signal model. With the electromagnetic field simulation technology design,the chip size was optimized to 2. 5 mm×1. 1 mm. The on-wafer test results of the chip show that when the static DC operating point is 35% of the maximum saturation current,the drain voltage is 5 V,and at the frequency of 9-15 GHz,the small-signal gain of the MMIC power amplifier is greater than 20 dB,the output power at the 1 dB compression point is greater than or equal to 27 dBm,and the power additional efficiency is greater than or equal to 35%. When the power is back to 19 dBm,the third order intermodulation is less than or equal to-37 dBc.
Based on the 0. 15 μm Ga As enhancement-mode pseudomorphic high electron mobility transistor( E-PHEMT) process,a high performance linear power amplifier monolithic microwave integrated circuit( MMIC) used for 5G communication and point-to-point transmission was designed and fabricated. The two-stage amplification structure with a gate width ratio of 1 ∶ 4. 4 ensured the gain and power of the circuit. The optimal match of the input and output impedance was achieved based on the large-signal model. With the electromagnetic field simulation technology design,the chip size was optimized to 2. 5 mm×1. 1 mm. The on-wafer test results of the chip show that when the static DC operating point is 35% of the maximum saturation current,the drain voltage is 5 V,and at the frequency of 9-15 GHz,the small-signal gain of the MMIC power amplifier is greater than 20 dB,the output power at the 1 dB compression point is greater than or equal to 27 dBm,and the power additional efficiency is greater than or equal to 35%. When the power is back to 19 dBm,the third order intermodulation is less than or equal to-37 dBc.
引文
[1]RAPPAPORT T S,SUN S,MAYZUS R,et al.Millimeter wave mobile communications for 5G cellular:it will work![J].IEEE Access,2013,1:335-349.
[2]TKACHENKO Y,WEI C,SPRINKLE S,et al.Performance comparison of HBTs and quasi E-mode PHEMTs for single supply high efficiency power amplifiers[C]∥Proceedings of the 31stEuropean Microwave Conference.London,England,2001:24-26.
[3]TASKER P J.Practical waveform engineering[J].IEEE Microwave Magazine,2009,10(7):65-76.
[4]OKA T,HASEGAW A M,HIRATA M,et al.A high power low-distortion Ga As HBT power amplifier for mobile terminals used in broadband wireless applications[J].IEEE Journal of Solid-State Circuits,2007,42(10):2123-2129.
[5]WU D W,PARKHURST R,FU S L,et al.A 2 W,65%PAE single-supply enhancement-mode power PHEMT for 3 V PCS applications[C]∥Proceedings of the IEEE MTT-S International Microwave Symposium Digest.Denver,CO,USA,1997:8-13.
[6]FUJII K,MORKNER H.E-PHEMT,single supply,power amplifier for Ku band applications[C]∥Proceedings of the IEEE International Microwave Symposium Digest.Philadelphia,PA,USA,2003,2:859-862.
[7]MACOM.XP1042-QT[K/OL].[2017-05-18](2017-05-23).http:∥www.macom.com/products/productdetail/XP1042-QT.
[8]QORVO.TGA2527-SM[K/OL].[2017-05-18](2017-05-23).http:∥www.qorvo.com/products/p/TGA2527-SM.
[9]QORVO.TGA2565-SM[K/OL].[2017-05-18](2017-05-23).http:∥www.qorvo.com/products/p/TGA2565-SM.
[2]TKACHENKO Y,WEI C,SPRINKLE S,et al.Performance comparison of HBTs and quasi E-mode PHEMTs for single supply high efficiency power amplifiers[C]∥Proceedings of the 31stEuropean Microwave Conference.London,England,2001:24-26.
[3]TASKER P J.Practical waveform engineering[J].IEEE Microwave Magazine,2009,10(7):65-76.
[4]OKA T,HASEGAW A M,HIRATA M,et al.A high power low-distortion Ga As HBT power amplifier for mobile terminals used in broadband wireless applications[J].IEEE Journal of Solid-State Circuits,2007,42(10):2123-2129.
[5]WU D W,PARKHURST R,FU S L,et al.A 2 W,65%PAE single-supply enhancement-mode power PHEMT for 3 V PCS applications[C]∥Proceedings of the IEEE MTT-S International Microwave Symposium Digest.Denver,CO,USA,1997:8-13.
[6]FUJII K,MORKNER H.E-PHEMT,single supply,power amplifier for Ku band applications[C]∥Proceedings of the IEEE International Microwave Symposium Digest.Philadelphia,PA,USA,2003,2:859-862.
[7]MACOM.XP1042-QT[K/OL].[2017-05-18](2017-05-23).http:∥www.macom.com/products/productdetail/XP1042-QT.
[8]QORVO.TGA2527-SM[K/OL].[2017-05-18](2017-05-23).http:∥www.qorvo.com/products/p/TGA2527-SM.
[9]QORVO.TGA2565-SM[K/OL].[2017-05-18](2017-05-23).http:∥www.qorvo.com/products/p/TGA2565-SM.