非负矩阵Hadamard积的新上界(英文)
详细信息    查看全文 | 推荐本文 |
  • 英文篇名:New Upper Bound for the Hadamard Product of Nonnegative Matrices
  • 作者:陈付彬
  • 英文作者:CHEN Fu-bin;Oxbridge College,Kunming University of Science and Technology;
  • 关键词:非负矩阵 ; Hadamard积 ; 谱半径 ; 上界
  • 英文关键词:nonnegative matrix;;Hadamard product;;spectral radius;;upper bound
  • 中文刊名:GXSZ
  • 英文刊名:Journal of Guangxi Teachers Education University(Natural Science Edition)
  • 机构:昆明理工大学津桥学院;
  • 出版日期:2019-03-25
  • 出版单位:广西师范学院学报(自然科学版)
  • 年:2019
  • 期:v.36;No.113
  • 基金:Supported by the National Natural Science Foundation of China(11501141);; Scientific Research Fund of Yunnan Provincial Education Department(2018JS747)
  • 语种:英文;
  • 页:GXSZ201901028
  • 页数:3
  • CN:01
  • ISSN:45-1069/N
  • 分类号:26-28
摘要
该文利用Gerschgorin定理给出了非负矩阵A和B的Hadamard积的谱半径新的上界.数值算例表明新结果在一定条件下改进了现有的一些结果.
        A new upper bound on the spectral radiusρ(A B)for the Hadamard product of two nonnegative matrices Aand Bis given by using Gerschgorin theorem.Numerical example shows that the new result improves several existing results in some cases.
引文
[1]陈景良,陈向辉.特殊矩阵[M].北京:清华大学出版社,2000.
    [2]Horn R A,Johnson C R.Topics in matrix analysis[M].New York:Cambridge University Press,1991.
    [3]Fang Maozhong.Bounds on eigenvalues of the Hadamard product and the Fan product of matrices[J].Linear Algebra Appl,2007,425:7-15.
    [4]Huang Rong.Some inequalities for the Hadamard product and the Fan product of matrices[J].Linear Algebra Appl,2008,428:1551-1559.
    [5]Liu Qingbing,Chen Guoliang.On two inqualities for the Hadamard product and the Fan product of matrices[J].Linear Algebra Appl,2009,431:974-984.
    [6]Liu Qingbing,Chen Guoliang,ZHAO Linlin.Some new bounds on the spectral radius of matrices[J].Linear Algebra Appl,2010,432:936-948.
    [7]Bweman A,Plemmons R J.Nonnegative matrices in the mathematical sciences[M].New York:Academic Press,1979.
    [8]Varga R S.Gerschgorin and his circles[M].Berlin:Springer,2004.

© 2004-2018 中国地质图书馆版权所有 京ICP备05064691号 京公网安备11010802017129号

地址:北京市海淀区学院路29号 邮编:100083

电话:办公室:(+86 10)66554848;文献借阅、咨询服务、科技查新:66554700