碲镉汞器件光敏元电容测试与分析
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摘要
报道了液氮温度下对HgCdTe器件进行电容测试的方法。标定了仪器寄生电容以及杜瓦寄生电容,并利用该测试结果计算得到PN结区附近的载流子浓度和相应的深度等数据。对比了碲镉汞常规PN结器件与雪崩光电二极管(APD)器件的耗尽层宽度以及N区载流子浓度。
A method for measuring the capacitance of HgCdTe devices at liquid nitrogen temperature was discussed in this article. The instrument and the parasitic capacitance of the dewar were both calibrated, after which the carrier concentration near the PN junction and its corresponding depth were computed from C-V curves. Finally, the width of the depletion layer and the carrier concentration in the N region of a HgCdTe conventional PN junction device were compared to those of an avalanche photodiode(APD) device.
A method for measuring the capacitance of HgCdTe devices at liquid nitrogen temperature was discussed in this article. The instrument and the parasitic capacitance of the dewar were both calibrated, after which the carrier concentration near the PN junction and its corresponding depth were computed from C-V curves. Finally, the width of the depletion layer and the carrier concentration in the N region of a HgCdTe conventional PN junction device were compared to those of an avalanche photodiode(APD) device.
引文
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[2]杨健荣.碲镉汞材料物理与技术[M].北京:国防工业出版社,2012.YANG Jianrong.Physics and Technology of Mercury Cadmium Tellurium[M].Beijing:national Defense Industry Press,2012.
[3]Lucia M L,Hernandez-Rojas J L,Leon C,et al.Capacitance measurements of pn junctions:depletion layer and diffusion capacitance contributions[J].European Journal of Physics,1993,14(2):86.
[4]何波,史衍丽,徐静.C-V法测量pn结杂质浓度分布的基本原理及应用[J].红外,2006,27(10):5-10.HE Bo,SHI Yanli,XU Jing.The basic principle and Application of C-Vmethod for measuring impurity concentration Distribution in pn junctions[J].Infrared,2006,27(10):5-10.
[5]Beck J,Scritchfield R,Sullivan B,et al.Performance and modeling of the MWIR HgCdTe electron avalanche photodiode[J].Journal of Electronic Materials,2009,38(8):1579-1592.