HfO_2薄膜或涂层的制备方法及相应特点
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摘要
HfO_2因具有大的介电常数、宽的带隙、低的漏电流、与Si的导带偏移较大且与Si的晶格匹配良好,在半导体工业领域获得了广泛的应用;同时,Hf O2有着高的熔点,低的导热系数及蒸发率,优良的热相容、热障及热扩散屏障等性能,是目前高温抗氧化涂层材料最具希望的候选材料。本文简述了HfO_2薄膜几种常见的制备方法及相应特点。
Due to its high dielectric constant, wide band gap, low leakage current, large conduction band offset and excellent lattice match with Si, HfO_2 obtained to have a widespread application in the field of semiconductor industry; also, with it's high melting point, low thermal conductivity and evaporation rate, excellent thermal compatibility, thermal barrier and thermal diffusion barrier properties, HfO_2 tends to be the most promising candidate for coating materials with high temperature oxidation resistance. This paper describes several common preparation methods and corresponding features of HfO_2 films.
Due to its high dielectric constant, wide band gap, low leakage current, large conduction band offset and excellent lattice match with Si, HfO_2 obtained to have a widespread application in the field of semiconductor industry; also, with it's high melting point, low thermal conductivity and evaporation rate, excellent thermal compatibility, thermal barrier and thermal diffusion barrier properties, HfO_2 tends to be the most promising candidate for coating materials with high temperature oxidation resistance. This paper describes several common preparation methods and corresponding features of HfO_2 films.
引文
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[25]NIINISTO J,MANTYMAKI M,KUKLI K,et al.Growth and phase stabilization of Hf O2 thin films by ALD using novel precursors[J].Journal of Crystal Growth,312(2010):245-249.
[26]DUBOURDIEU C,RAUWEL E,MILLON C,et al.Growth by liquid-injection MOCVD and properties of Hf O2 films for microelectronic applications[J].Chemical Vapor Deposition,2006,12(2-3):187-192.
[27]O'KANE R,GASKELL J,et al.Growth of Hf O2 by liquid injection MOCVD and ALD using new hafniumcyclopentadienyl precursors[J].Chemical Vapor Deposition,2007,13(11):609-61.
[2]KHOMENKOVA L,PORTIER X,et al.Thermal stability of high-k Si-rich Hf O2 layers grown by RF magnetron sputtering[J].Journal of Physics:Conference Series,2010,61(2007):1231-1235.
[3]ZHANG H Y,JIN C G,et al.Structural and electrical properties of high-k Hf O2 films modified by CHF3 and C4F8/O2 plasmas[J]Applied Physics A,2014,117(4):2057-2065.
[4]艾万君,熊胜明.单层二氧化铪薄膜的特性研究[J].光电工程2012,39(2):134-140.AI W J,XIONG S M.Opto-Electronic Engineering,2012,39(2):134-140.
[5]申雁鸣,贺洪波,邵淑英.沉积温度对Hf O2薄膜残余应力的影响[J].强激光与粒子束,2005,17(12):1812-1816.SHEN Y M,HE H B,SHAO S Y.High Power Laser and Beams,2005,17(12):1812-1816.
[6]邓文渊,李春,金春水.电子束蒸发和离子束溅射Hf O2紫外光学薄膜[J].中国光学与应用光学,2010,3(6):630-635.Deng W Y,Li C,Jin C S.Chinese Journal of Optics and Applied Optics,2010,3(6):630-635.
[7]KANG Y S,KIM C Y,CHUNG K B,et al.Thickness dependence on crystalline structure and interfacial reactions in Hf O2 films on In P(001)grown by atomic layer deposition[J]Appl.Phys.Lett.,2010,97(17):172108-172101.
[8]HAUSMANN D M,GORDON R G.Surface morphology and crystallinity control in the atomic layer deposition(ALD)of hafnium and zirconium oxide thin films[J].Journal of Crystal Growth,2003,249(2003):251-261.
[9]CHO M H,ROH Y S,WHANG C N,et al.Thermal stability and structure characteristics of Hf O2 films on Si(100)grown by atomic-layer deposition[J].Appl.Phys.Lett.,2002,81(3):472-474.
[10]VARGAS M,MURPHY N R,RAMANA C V.Structure and optical properties of nanocrystalline hafnium oxide thin films[J].Optical Materials,2014,37(2014):621-628.
[11]FORTINI A J,TUFFIAS R H.Advanced materials for chemical propulsion:Oxide-iridium/rhenium combustion chambers[J].AIAA,1999:99-2894.
[12]SU Y J,TRICE R W,FABER K T,et al.Thermal conductivity,phase stability and oxidation resistance of Y3Al5O12(YAG)/Y2O3-Ir O2(YSZ)thermal-barrier coatings[J].Oxidation of Metals,2004,61(3):253-271.
[13]郝振华,孙威,熊翔,等.常压化学气相沉积Zr O2涂层的显微结构与微观力学性能[J].中国有色金属学报,2013,23(7):1937-1943.HAO Z H,SUN W,XIONG X,et al.The Chinese Journal of Nonferrous Metals,2013,23(7):1937-1943.
[14]TAO T A,FEN W,FENG X M.High-temperature oxidation behavior of Al2O3/Ti Al matrix composite in air[J].Science in China Series E:Technological Sciences,2009,52(5):1273-1282.
[15]斯松华,袁晓敏,何宜柱.激光熔覆等离子喷涂Al2O3陶瓷涂层组织结构研究[J].表面技术,2002,31(4):11-14SI S H,YUAN X M,HE Y Z.Surface Technology,2002,31(4):11-14.
[16]赵海廷,马紫薇,李健,等.衬底温度对Hf O2薄膜结构和光学性能的影响[J].强激光与粒子束,2010,22(1):71-74.ZHAO H T,MA Z W,LI J,et al.High Power Laser and Beams,2010,22(1):71-74.
[17]马紫薇,苏玉荣,赵海廷,等.溅射气压对Hf O2薄膜结构和光学性能的影响[J].材料导报B,2012,26(5):16-18.MA Z W,SU Y R,ZHAO H T,et al.Materials Review B,2012,26(5):16-18.
[18]许宁.射频磁控反应溅射制备Hf O2薄膜的研究[D].西安:西北工业大学硕士学位论文,2007.
[19]张红鹰,吴师岗,杜健.电子束蒸发制备Hf O2薄膜的性能研究[J].硅酸盐通报,2014,33(5):1256-1258.ZHANG H Y,WU S G,DU J.Bulletin of the Chinese Ceramic Society,2014,33(5):1256-1258.
[20]吴师岗,邵建达,易葵,等.Hf O2膜料中的杂质对薄膜损伤及性能的影响[J].稀有金属材料与工程,2006,35(5):757-760.WU S G,SHAO J D,YI K,et al.Rare Metal Materials and Engineering,2006,35(5):757-760.
[21]岑忞,章岳光,陈卫兰,等.沉积速率和氧分压对Hf O2薄膜残余应力的影响[J].物理学报,2009,58(10):7025-7029.CHEN W,ZHANG Y G,CHEN W L,et al.Acta Physica Sinica,2009,58(10):7025-7029.
[22]ENSIGER W.Low energy ion assist during deposition:An effective tool for controlling thin film microstructure.Nuclear Instruments and Methods in Physics Research B,1997:796-808.
[23]王聪娟,晋云霞,邵建华,等.离子束辅助反应制备的氧化铪薄膜特性[J].强激光与粒子束,Dec.2007,19(21):2087-2090.WANG C J,JIN Y X,SHAO J H,et al.High Power Laser and Beams,2007,19(21):2087-2090.
[24]张俊杰.原子层沉积制备的Hf O2高K栅介质材料特性研究[D].天津:南开大学硕士学位论文,2010.
[25]NIINISTO J,MANTYMAKI M,KUKLI K,et al.Growth and phase stabilization of Hf O2 thin films by ALD using novel precursors[J].Journal of Crystal Growth,312(2010):245-249.
[26]DUBOURDIEU C,RAUWEL E,MILLON C,et al.Growth by liquid-injection MOCVD and properties of Hf O2 films for microelectronic applications[J].Chemical Vapor Deposition,2006,12(2-3):187-192.
[27]O'KANE R,GASKELL J,et al.Growth of Hf O2 by liquid injection MOCVD and ALD using new hafniumcyclopentadienyl precursors[J].Chemical Vapor Deposition,2007,13(11):609-61.