摘要
氮化镓GaN(gallium nitride)功率器件因其出色的导通与开关特性,能够实现系统高频化与小型化,有效提升系统功率密度。但是,增强型GaN功率器件由于其栅极可靠性问题,使其在电源管理系统中无法直接替换传统硅基功率MOSFET器件。为此,提出一种预驱动芯片,通过片内集成LDO与电平移位结构,实现兼容12~15 V输入,并输出5 V信号对GaN功率器件的栅极进行有效与可靠控制,达到兼容传统硅基功率器件应用系统的要求。此外,通过多芯片合封技术,将预驱动芯片与GaN功率器件实现封装集成,降低了寄生电感,使其应用可靠性进一步提升。
Owing to their excellent on-state and switching characteristics, gallium nitride(GaN) power devices can meet the high-frequency and miniaturization requirements for electronic power systems, thus effectively improving the systems' power density. However, the enhanced GaN power device cannot directly replace the Si-based power MOSFET device in the power management system because of the reliability problem with its gate. Accordingly, a pre-driver chip for GaN power device integrating the low dropout regulator(LDO) and the level-shift structure is proposed, which is compatible with the 12 ~15 V input and can output 5 V signal to effectively and reliably control the gate in GaN power devices. In this way, the compatibility requirement for the system with the application of the conventional Si-based power devices is satisfied. In addition, the pre-driver chip and the GaN power device are packaged in one chip using the multichip packaging technology, which reduces the parasitic inductance and further improves the application reliability.
引文
[1]Lidow A,Strydom J,De Rooij M,et al.GaN transistors for ef-ficient power conversion[M].New York,USA:John Wiley&Sons,Ltd 2014.
[2]Seeman M D,Bahl S R,Anderson D I,et al.Advantages of GaN in a high-voltage resonant LLC converter[C].2014 IEEEApplied Power Electronics Conference and Exposition-APEC2014.Fort Worth,TX,USA,2014:476-483.
[3]Cucak D,Vasic M,García O,et al.Application of eGaNFETs for highly efficient radio frequency power amplifier[C].2012 7th International Conference on Integrated Power Electronics Systems(CIPS).Nuremberg,Germany,2012:1-6.
[4]Costinett D,Nguyen H,Zane R,et al.GaN-FET based dual active bridge DC-DC converter[C].2011 Twenty-Sixth Annual IEEE Applied Power Electronics Conference and Exposition(APEC).Fort Worth,TX,USA,2011:1425-1432.
[5]Kimball D F,Jeong J,Hsia C,et al.High-efficiency envelope-tracking W-CDMA base-station amplifier using GaNHFETs[J].IEEE Transactions on Microwave Theory and Techniques,2006,54(11):3848-3856.
[6]Mishra U K,Shen Likun,Kazior T E,et al.GaN-based RF power devices and amplifiers[J].Proceedings of the IEEE,2008,96(2):287-305.
[7]Song M K,Chen Lei,Sankman J,et al.16.7 A 20 V 8.4W 20MHz four-phase GaN DC-DC converter with fully onchip dual-SR bootstrapped GaN FET driver achieving 4 ns constant propagation delay and 1 ns switching rise time[C].2015 IEEE International Solid-State Circuits Conference-(ISSCC)Digest of Technical Papers.San Francisco,CA,USA,2015:1-3.
[8]Murphy M.Cascode circuit employing a depletion-mode,GaN-based FET:U.S.Patent 7,501,670[P].2009-3-10.
[9]Huang Xiucheng,Li Qiang,Liu Zhengyang,et al.Analytical loss model of high voltage GaN HEMT in cascode configuration[J].IEEE Transactions on Power Electronics,2014,29(5):2208-2219.
[10]Huang Xiucheng,Du Weijing,Lee F C,et al.Avoiding divergent oscillation of a cascode GaN device under high-current turn-off condition[J].IEEE Transactions on Power Electronics,2017,32(1):593-601.
[11]Huang Xiucheng,Du Weijing,Lee F C,et al.Avoiding Si MOSFET avalanche and achieving zero-voltage switching for cascode GaN devices[J].IEEE Transactions on Power Electronics,2016,31(1):593-600.
[12]Persson E.Practical application of 600 V GaN HEMTs in power electronics[C/OL].Applied Power Electronics Conference and Exposition(APEC),Professional Education Seminar.Washington DC,USA,(2015-03-16).[2019-02-28].https://www.infineon.com/dgdl/Infineon-Presentation_GalliumNitride_GaNApplications_SeminarAPEC2015-AP-v01_00-EN.pdf?fileId=5546d4624bcaebcf014c2c265e69007e.
[13]Liu Zhengyang.Characterization and failure mode analysis of cascode GaN HEMT[D].Blacksburg,Virginia,USA:Virginia Tech,2014.
[14]EPC2001-Enhancement Mode Power Transistor[EB/OL].[2019-02].https://epc-co.com/epc/Products/eGaNFETsandICs/EPC2001.aspx.
[15]S尴rensen C,Fogsgaard M L,Christiansen M N,et al.Conduction,reverse conduction and switching characteristics of GaN E-HEMT[C].2015 IEEE 6th International Symposium on Power Electronics for Distributed Generation Systems(PEDG).Aachen,Germany,2015:1-7.
[16]Wu T.Cdv/dt induced turn-on in synchronous buck regulators[C].High Frequency Power Conversion(HFPC).Chicago,USA,1999:115-122.
[17]Ng W T,Trescases O,Wei Guowen.Output stages for integrated DC-DC converters and power ICs[C].2007 IEEE Conference on Electron Devices and Solid-State Circuits.Tainan,Taiwan,China,2007:91-94.
[18]Malcovati P,Maloberti F,Fiocchi C,et al.Curvature-compensated BiCMOS bandgap with 1-V supply voltage[J].IEEEJournal of Solid-State Circuits,2001,36(7):1076-1081.