摘要
Perovskite solar cells(PSCs) have attracted tremendous attention in recent years due to the high device performance and the unique optoelectronic properties of perovskite materials [1].Charge carrier balance is critical for high performance perovskite solar cells [2].To improve the balance, one ongoing focus is to manipulate the charge carrier transport process by employing appropriate interface engineering [3].Here, we report the solvent treated PEDOT:PSS and additive modified PCBM as the hole selective contact(HSC) and electron selective contact(ESC), respectively, resulting in accelerated and balanced charge carrier transport within the device [4].As a consequence, charge carrier accumulation and recombination at the perovskite/selective contact interfaces were suppressed, leading to a power conversion efficiency(PCE) of 18.72% for a champion cell with a stabilized power output of 17.70% at the maximum power point.The optimized devices also exhibited negligible current density-voltage(J-V) hysteresis and improved reproducibility.
Perovskite solar cells(PSCs) have attracted tremendous attention in recent years due to the high device performance and the unique optoelectronic properties of perovskite materials [1].Charge carrier balance is critical for high performance perovskite solar cells [2].To improve the balance, one ongoing focus is to manipulate the charge carrier transport process by employing appropriate interface engineering [3].Here, we report the solvent treated PEDOT:PSS and additive modified PCBM as the hole selective contact(HSC) and electron selective contact(ESC), respectively, resulting in accelerated and balanced charge carrier transport within the device [4].As a consequence, charge carrier accumulation and recombination at the perovskite/selective contact interfaces were suppressed, leading to a power conversion efficiency(PCE) of 18.72% for a champion cell with a stabilized power output of 17.70% at the maximum power point.The optimized devices also exhibited negligible current density-voltage(J-V) hysteresis and improved reproducibility.
引文
[1]T.Liu,K.Chen,Q.Hu,R.Zhu,Q.Gong,Adv.Energy Mater.2016,1600457.
[2]G.Xing,N.Mathews,S.Sun,S.S.Lim,Y.M.Lam,M.Gr?tzel,S.Mhaisalkar,T.C.Sum,Science 2013,342,344.
[3]Q.Hu,J.Wu,C.Jiang,T.Liu,X.Que,R.Zhu,Q.Gong,ACS Nano 2014,8,10161.
[4]K.Chen,Q.Hu,T.Liu,L.Zhao,D.Luo,J.Wu,Y.Zhang,W.Zhang,F.Liu,T.P.Russell,R.Zhu,Q.Gong,Adv.Mater.2016,28,10718-10724.