摘要
自从金属-氧化物-半导体(MOS)器件出现以来，集成电路的集成度按照摩尔定律增加，相应地，器件的物理尺寸按照等比缩小的原则不断缩小，SiO_2作为栅介质的厚度不断缩小，特征尺寸在0.1μm以下的集成电路要求SiO_2栅介质的厚度小于1.7nm。当SiO_2的物理厚度减小到1.5nm时，栅电流将会急剧增加，高达1×10A/cm~2。如此大的栅电流，将会产生很多严重的问题，如热稳定性、散热、寿命等问题，严重地影响着器件性能，使器件不能正常工作，以致限制了集成电路的进一步发展。目前，正在利用介电常数较大的材料来代替传统的SiO_2作为栅介材料，来减少隧穿电流。La_2O_3是一种新型的高介电常数的栅介材料，它的优良性能引起了微电子界的注意，但它的很多特性还有待于研究，其中最重要的是它的热稳定性和隧道电流。
针对这种情况，笔者开展了以下几方面的工作，获得了一些有意义的结果。
1．在分析变角X射线光电子能谱(XPS)原理和理论的基础上，针对栅介薄膜厚度测量的需要，引进了新的计算超薄单层厚度和多层厚度的计算方法，编写了变角XPS计算多层结构的处理软件。其计算结果与英国国家物理实验室的ARCtick软件的计算结果相比，有相同的准确性。本软件不仅仅能计算多层薄膜的厚度，而且能验证假定模型的正确性。这种算法和软件的实现对于MOS栅介质层的结构分析有很高的实用价值，对于微电子器件的结构研究有一定的推动作用。
2．利用射频溅射镀膜技术在Si片上制备了La_2O_3膜，通过变角XPS分析和多层结构的定量计算，测得La_2O_3与Si衬底之间的SiO_2层厚度为0.6nm。在O_2中、700℃、10分钟退火，薄膜样品的SiO_2层厚度增加得比较大，达2.1nm。在N_2中、700℃、10～30分钟退火，薄膜样品的SiO_2层厚度为1.2nm。在N_2中退火处理的样品再次在O_2中、700℃、10分钟退火，发现La_2O_3与SiO_2层厚度没有发生变化，说明N_2退火后SiO_2界面层趋于稳定，比在O_2中退火其厚度要小。在N_2中退火处理有利于提高Si上La_2O_3薄膜的热稳定性，是稳定界面层的重要途径。
3．比较了WKB和精确解法计算栅介质隧穿电流的方法，精确解法在解决单SiO_2层和WKB准经典近似有相同的结果，但是WKB不适合计算La_2O_3/SiO_2双层栅介层的隧穿电流，而精确解法能精确地计算双层栅介质隧穿电流。首次用精确解法计算了La_2O_3/SiO_2双层栅介质结构的隧穿电流。对比栅极注入和衬底注入隧穿电流，显示衬底注入隧穿电流要比栅极注入隧穿电流大1-2个数量级。在等效氧化层厚度相同的情况下，比较了几种不同的SiO_2层厚度和La_2O_3层厚度结构的隧穿电流的大小，给出了SiO_2层厚度和La_2O_3层厚度对隧穿电流的影响。
Since metal-oxide-semiconductor (MOS) device appeared, integration of integrated circuit (IC) expands as Moore law. Meanwhile the dimension of device scales down, the thickness of SiO2 gate dielectric shrinks as the same law. But as the thickness of SiO2 gate dielectric reaches at ISA, the gate current rises very quickly and reaches at 1×10A/cm2. The large gate current brings out a lot of questions such as thermal stability, thermal dissipation, lifetime etc, so, it affects the device's function and the device can't work normally. In order to resolve the questions, a new high K material is developed instead of the traditional SiO2 gate dielectric material to reduce the tunneling current. The La2O3 material was paid attention because of its good gate dielectric properties, but there are a lot of properties are under research, the most important property is thermal stability.
To improve the situation the author has made the following research and achieved beneficial results.
1. In order to measure the thickness of gate dielectric, a new algorithm is introduced to calculate the mono-layer and multi-layer thickness on the basic of theory of the angle-dependent X-ray Photoelectron Spectroscopy (XPS), and a software is developed on the basic of the algorithm. The calculational result agrees with the result which is calculated by ARCtick software which was developed by National Physical Laboratory (NPL) of UK. The multi-layer model algorithm not only calculates the thickness of gate dielectric but also validates whether the model is proper. It has high practical merit to analyze the structure of gate dielectric. The realization of the algorithm drives the research of micro-electron structure.
2. The La2O3 thin film is prepared by RF technology, the film is analyzed by ARXPS, the thickness is calculated by Quantitative Analysis software, the thickness of SiO2 thin film between La2O3 and Si is 0.6nm. After annealing at temperature 700癈 for 10 minutes in O2 the thickness of SiO2 becomes thick very much and reaches at 2.1nm. After annealing at temperature 700℃ for 10-30 minutes in N2, the thickness of Si02 is 1.2nm. After annealing in N2, annealing process at temperature 700 ℃ for 10 minutes in O2 secondly, the thickness of SiO2 does not change, it shows that the SiO2 layer is stable after annealing in N2, the thickness of SiO2 is less than that annealing in O2. So a conclusion can be got that the annealing in N2 raises the La2O2, stability.
3. The exact solution and WKB approximation are compared, The exact solution agrees with the WKB approximation in calculating the mono-layer SiO2 tunneling current,
but the WKB approximation is inappropriate for the dual layer oxide-lanthanum structure, while the exact algorithm can give a exact result. The calculational result by exact solution shows that the substrate inject current is larger than gate inject current in the same condition. The influence of the thickness of SiO2 and La2O3 on the tunneling current is given to compare much different thickness of SiO2 and La2O3 tunneling current on the same equivalent oxide thickness (EOT) condition.
引文
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