摘要
本论文研究了电光检测技术用于集成电路芯片无损的故障诊断。论文阐述了电光检测技术的机理,结合正面入射式电光探测系统阐述并推导了其实现标定电压测量的工作原理。为了提高了电光探头的空间分辨率、实现电压校准以及探头小型化,首次设计制作成功ZnO薄膜电场探测器,并且研究了其用于电光检测的低频特性。论文期间为生长较好C轴取向的ZnO薄膜,做了较深入的磁控溅射条件研究。通过微区XRD和微区二次谐波检测技术,证明在探头锥面生长的ZnO薄膜具有电光效应。
国内外在GHz或更高频的电光检测技术已做了很多研究,但在集成电路故障诊断的低频或近直流的研究却很少。论文对GaAs探头和ZnO探头电光检测上的低频特性做了深入研究。根据对共面波导电场分布机理的研究,巧妙运用参考电极,无需精确定位的情况下实现电压校准。解决了电光检测技术用于实用化的一个障碍。
Optical detection of electric field has proved to be a unique tool, which allows noncontact field measurements with high spatial and temporal resolution. One of the mechanisms of electric field probing is a linear electro-optic (EO) effect in noncentrosymmetric crystals, where the refractive index varies with the applied field. As a result, a probing laser beam traveling through the EO crystal is delayed. Because the delay is linearly proportional to the applied field, it is convenient to use the EO effect for direct measurement of the field. Some applications however require electric field measurement with high spatial resolution. In optical probing of integrated circuits the electrical signals are detected by placing an EO probe in the region of the fringing field on the circuit surface. The fringing field is typically confined within only several micrometers from the surface and the time of travel through the field region is small, but optical detection meets these requirements.
The external EO probing technique overcame the limitations of the substrate materials, but brought new issues at the same time. First, in internal EO probing technique the substrate materials contact down to the signal transmission lines, the signal electric field can extend into the EO materials completely and distribute uniformity. For external EO probing technique, the separation between EO crystal and signal transmission lines produce the air gap when the circuits to be tested. Here, the huge difference of the dielectric constant between EO material and ambience make the electric fields compressed in the air gap, only few part of the electric fields can extend into the EO crystal, so EO signal amplitude be reduced largely. For the same signal detection and amplification system, this means the voltage sensitivity is reduced. Second, the tested EO signal is the un- distortion simulation of the voltage signal in the ICs, and the signal wave, the time and phase relaxations of the wave all accord to the electric signal in ICs completely. But the amplitude of EO modulation signal lies on the lognitudinal component of the electric field issued from the electric signal transmission line; witch is influenced by the neighbor circuit layout. So the calibration voltage measurement cannot be realized.
Although ultra-high-speed IC operates at over 10 Gb/s with the development of IC’s production process, IC faults are always diagnosed at low frequency and even near DC. Testing IC at ultra-high frequency is unconvinced and even can not diagnose where the IC fault happen, because high frequency current go though breakpoints smoothly. Breakpoints are equivalent to capacitances so that make IC testing in trouble at ultra-high frequency. At low frequency the opposite piezoelectric and electrostrictive effects of noncentrosymmetric crystals can keep up with the applied field. In our probing system, the signals we detected from semiconductor detector consist of the light intensity change produced by electro-optic, opposite piezoelectric and electrostrictive effects. The low-frequency characteristics research is necessary, if we want to adopt optical detection to diagnose IC faults.
During last two years, I have studied the electro-optic detection based on ZnO thin film. First of all, the focus of my work is to grow better c-axis oriented ZnO thin films which have electro-optic effect. First, I explored the magnetron sputtering growth conditions for high-quality ZnO thin films. There are a lot of conditions, such as growth temperatures, annealing conditions, the flow ratios of oxygen and argon and substrates’conditions. Second, I tested the quality of ZnO thin films which was grew on cone tips. Although the small size of electro-optic probes’tips caused our inconvenience for films’quality testing, but we have adopted a micro-zone harmonic generation technology to detect and prove that the ZnO thin films grew on the cone tips have electro-optic effect.
I study the low-frequency characteristics of GaAs probes and ZnO probes. We found the opposite piezoelectric effect of EO material affect the measured signals badly. With flexibly using of the reference electrode, we achieve voltage calibration of electro-optic probes. Hence, we solve the difficult problem of the electro-optical detection technology.
引文
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