摘要
本工作利用脉冲激光烧蚀单晶硅靶，在硅衬底和玻璃衬底上沉积
了硅纳米微粒。通过扫描电子显微镜（SEM），透射电镜（TEM），X射
线衍射（XRD），Raman散射（Raman），光电子能谱（EDS），以及光致
发光（PL）等技术，对所沉积的硅基纳米微粒的形貌，成分，晶态结构，
发光特性及稳定性进行了分析和表征。研究了几种工艺参数，如气压、
激光能量、沉积方式对所制备的硅基纳米微粒的影响。初步讨论了硅
基纳米微粒的生长机理及发光机理，并对制备高质量，尺寸及发光可控
的硅基纳米材料，以及如何进行有效钝化，以实现该材料的高效稳定
发光进行了有益的探讨及尝试。本工作还对激光退火及金属诱导晶化
对非晶硅纳米薄膜的影响进行了一系列的研究，得到了一定的规律。
研究表明，随着气压山高气压（10~(-2)Pa）向低气压（10Pa）再向真空
（10~(-1)Pa）的变化过程中，硅微粒产生了由分散分布的硅微粒向密集
度增加的团簇变化直至连续成膜的结构变化。挡板的加入及背散射的
应用，可以有效减少激光烧蚀产生的大颗粒，使纳米硅材料表面平滑，
尺寸分布范围变均匀。激光退火可以有效实现样品从非晶态向晶态的
转化，镍的加入降低了晶化的激光能量域值，对于在较低的能量范围
内实现晶化，改善薄膜特性有着促进作用。硅纳米微粒晶粒尺寸及稳
定性对其发光有着很大的影响，利用氮化硅对其进行钝化后，有效避
免了材料在大气中的氧化，提高了材料的发光稳定性，为纳米硅这一
发光材料在器件上的应用打下了一定的基础。
Si-based nanograins are fabricated by pulsed laser ablation of monocrystaline Si
target. Several measuremental techniques, including Scanning electronic microscopy
SEM ) , Transmission electron microscopy ( TEM ), X-ray diffraction (XRD)
Raman Scattering spectroscopy (Rarnan) and Photoluminescence (PL) , were used to
analyze the morphology characteristic, light-emission and stabilization of the Si
nanograins. The effects of several experimental parameters, such as gas pressure, laser
energy, the different collecting methods on the growth of the Silicon nanograms are
studied. We also discussed the mechanism of the growth and PL of the Si nanograins.
The method to get high quality Si nanograins with controllable size and stable
light-emission, such as using mask between the target and the substrate to eliminate the
large droplets and using the silicon nitride as the passivating layer to process effective
passivation, are also attempted. Laser annealing is also studied. The induced Ni indeed
decreases the energ threshold for laser crystallization. The low energy crystallization
makes the morphology of the Si material more uniform, avoiding the ununiformity of
high energy laser annealing. The research show that the size and the stabilization of
the Si nanograins have great effect to the PL, the passivating layer of SiNx can prevent
the oxidation of the nanometer material, improve the stabilization of Si nanograins and
the development of applying of the Si nanograins
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