OTFT器件及气敏性能研究
摘要
有机薄膜晶体管(OTFT),又称为有机薄膜场效应管。因其具有低功耗、质量轻、体积小等优点自问世以来就受到研究人员的普遍关注。目前,OTFT被广泛地应用于传感器、存储卡和有源驱动平板显示等领域。本文以重掺杂的n型硅为衬底、SiO_2为绝缘层,分别以六噻吩(α-6T)和聚3-己基噻吩(P3HT)复合薄膜作为有源层制作了底栅极底接触结构的有机薄膜晶体管器件。在此基础上把器件应用于气体传感器,并测试了其对几种气体的响应特性,具体工作包含以下几个方面:
1.采用真空蒸发法制备了六噻吩(α-6T)薄膜,研究了α-6T有机薄膜晶体管的电学性质。将制备好的六噻吩有机薄膜晶体管暴露在不同的气体中,研究了器件对各种气体的响应特性。结果表明α-6T-TFT传感器对NO_2、NH_3这两种气体表现出良好的响应特性。两种气体引起器件的漏源电流(I_(DS))变化相反。α-6T-TFT传感器对甲醇、乙醇、仲丁醇这三种有机挥发性蒸汽的也具有一定的敏感性。
2.采用旋涂法分别制备了P3HT薄膜和P3HT/单壁碳纳米管(Single-walled Carbon Nanotubes,SWCNTs)复合薄膜。分别采用这两种材料为有源层制备了OTFT器件。比较这两种有源层器件的电学性质,结果表明,P3HT/SWCNTs薄膜晶体管的迁移率要高于P3HT-TFT。
3.比较了P3HT/SWCNTs薄膜晶体管和P3HT-TFT对不同气体的响应。结果表明P3HT/SWCNTs薄膜晶体管对H_2S气体表现出良好的响应特性。而P3HT-TFT对H_2S并不敏感。另外,比较了P3HT-TFT和P3HT复合薄膜晶体管传感器对丙酮、甲醇、乙醇、正丁醇、异丙醇五种有机挥发性蒸汽的响应特性,结果表明,两种传感器对这几种气体都具有很好的响应性和恢复特性。但P3HT复合薄膜晶体管传感器的灵敏度要高于P3HT-TFT气体传感器。
通过实验,还发现OTFT气体传感器的灵敏度可以通过选择合适的栅压来调制,这种优点是传统电阻式传感器所不具备的。
Organic thin-film transistors(OTFTs) is also called organic field-effect transistors. The OTFTs have attracted intense attention because of their advantages such as lower power consumption, less weight, and smaller size. At present, they have been widely used in sensors, memory devices and active-matrix flat-panel displays. In this paper, two kinds of the OTFTs with the‘‘bottom-gate’’and‘‘bottom-contact’’configuration were fabricated withα-sexithiophene (α-6T) and poly(3-hexylthiophene)(P3HT) hybrid materials as the active layer. Furthermore, the responses of these OTFTs to several kinds of gases were also described. The main research contents were as follows:
1.α-6T thin film was doposited by vacuum evaporation. The electrical characteristics of theα-6T-TFT were investigated. In experiment, the gas sensing properties ofα-6T-TFT exposed to different gases were also tested. The results show that theα-6T-TFT exhibit a good level of performance particularly in terms of response when exposed to NO_2 and NH_3 gas. Besides,α-6T-TFT is also sensitive to volatile organic vapors such as methanol, ethanol and sec-butyl alcohol.
2. P3HT and P3HT/Single-wall carbon Nanotubes (SWCNTs) hybrid thin films were doposited by spin coating as the active layer. The electrical characteristics of these two devices were compared. The results show that the mobility of P3HT hybrid thin film transistors is higher than that of P3HT based thin film transistors.
3. The sensing properties of P3HT and P3HT hybrid materials based OTFTs to several gases were discussed. The results show that the P3HT hybrid thin film transistors exhibit a excellent response and recovery characteristics to hydrogen sulfide (H2S) gas, while the P3HT-TFT show insensitivity to H2S gas. Meanwhile, both the P3HT/SWCNTs-TFT and P3HT-TFT devices were exposed to five volatile organic chemicals (VOC) such as acetone, methanol, ethanol, n-butyl alcohol and isopropyl alcohol. The results show that the sensitivities of P3HT/SWCNTs-TFT are higher than those of P3HT-TFT.
Moreover, the OTFTs devices possess a high sensitivity which can be adjusted by the gate-source voltage. It means that the sensitivity of the devices operated in a proper gate bias may be enhanced, which is superior to chemiresistor sensors.
1.采用真空蒸发法制备了六噻吩(α-6T)薄膜,研究了α-6T有机薄膜晶体管的电学性质。将制备好的六噻吩有机薄膜晶体管暴露在不同的气体中,研究了器件对各种气体的响应特性。结果表明α-6T-TFT传感器对NO_2、NH_3这两种气体表现出良好的响应特性。两种气体引起器件的漏源电流(I_(DS))变化相反。α-6T-TFT传感器对甲醇、乙醇、仲丁醇这三种有机挥发性蒸汽的也具有一定的敏感性。
2.采用旋涂法分别制备了P3HT薄膜和P3HT/单壁碳纳米管(Single-walled Carbon Nanotubes,SWCNTs)复合薄膜。分别采用这两种材料为有源层制备了OTFT器件。比较这两种有源层器件的电学性质,结果表明,P3HT/SWCNTs薄膜晶体管的迁移率要高于P3HT-TFT。
3.比较了P3HT/SWCNTs薄膜晶体管和P3HT-TFT对不同气体的响应。结果表明P3HT/SWCNTs薄膜晶体管对H_2S气体表现出良好的响应特性。而P3HT-TFT对H_2S并不敏感。另外,比较了P3HT-TFT和P3HT复合薄膜晶体管传感器对丙酮、甲醇、乙醇、正丁醇、异丙醇五种有机挥发性蒸汽的响应特性,结果表明,两种传感器对这几种气体都具有很好的响应性和恢复特性。但P3HT复合薄膜晶体管传感器的灵敏度要高于P3HT-TFT气体传感器。
通过实验,还发现OTFT气体传感器的灵敏度可以通过选择合适的栅压来调制,这种优点是传统电阻式传感器所不具备的。
Organic thin-film transistors(OTFTs) is also called organic field-effect transistors. The OTFTs have attracted intense attention because of their advantages such as lower power consumption, less weight, and smaller size. At present, they have been widely used in sensors, memory devices and active-matrix flat-panel displays. In this paper, two kinds of the OTFTs with the‘‘bottom-gate’’and‘‘bottom-contact’’configuration were fabricated withα-sexithiophene (α-6T) and poly(3-hexylthiophene)(P3HT) hybrid materials as the active layer. Furthermore, the responses of these OTFTs to several kinds of gases were also described. The main research contents were as follows:
1.α-6T thin film was doposited by vacuum evaporation. The electrical characteristics of theα-6T-TFT were investigated. In experiment, the gas sensing properties ofα-6T-TFT exposed to different gases were also tested. The results show that theα-6T-TFT exhibit a good level of performance particularly in terms of response when exposed to NO_2 and NH_3 gas. Besides,α-6T-TFT is also sensitive to volatile organic vapors such as methanol, ethanol and sec-butyl alcohol.
2. P3HT and P3HT/Single-wall carbon Nanotubes (SWCNTs) hybrid thin films were doposited by spin coating as the active layer. The electrical characteristics of these two devices were compared. The results show that the mobility of P3HT hybrid thin film transistors is higher than that of P3HT based thin film transistors.
3. The sensing properties of P3HT and P3HT hybrid materials based OTFTs to several gases were discussed. The results show that the P3HT hybrid thin film transistors exhibit a excellent response and recovery characteristics to hydrogen sulfide (H2S) gas, while the P3HT-TFT show insensitivity to H2S gas. Meanwhile, both the P3HT/SWCNTs-TFT and P3HT-TFT devices were exposed to five volatile organic chemicals (VOC) such as acetone, methanol, ethanol, n-butyl alcohol and isopropyl alcohol. The results show that the sensitivities of P3HT/SWCNTs-TFT are higher than those of P3HT-TFT.
Moreover, the OTFTs devices possess a high sensitivity which can be adjusted by the gate-source voltage. It means that the sensitivity of the devices operated in a proper gate bias may be enhanced, which is superior to chemiresistor sensors.
引文
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[2] A Tsurnura, Koezuka H, Ando T. Macromolecular electronic device: Field-effect transistor with a polythiophene thin film.Appl.Phys.Lett, 1986, 49(18):1210-1212.
[3] A Tsumura, Koezuka H, Ando T. Polythiophene Field-Effect Transistor: Its Characteristics and Operation Mechanism. Synthetic Metals, 1988, 25:11-23.
[4] Akimichi H, Waragai K, Hotta S, et al. Field-effect Transistors using alkyl substituted oligothiophenes. Appl. Phys. Lett., 1991, 58(14):1500-1502.
[5] Garnier F, Hajlaoui R, Yassar A, et al. All-Polymer Field-Effect Transistor Realized by Printing Techniques. Science, 1994, 265(5179):1684-1686.
[6] Dodabalapur A, Katz H E, Torsi L, et al. Organic Heterostructure Field-Effect Transistors. Science, 1995, 269:1560-1562.
[7] Z Bao, A J, Lovinger, and A Dodabalapur. Organic field-effect transistors with high mobility based on copper phthalocyanine. Appl. Phys. Lett., 1996, 69:3066.
[8] A Dodabalapur, L J aquindanum, E H Katz, Z Bao. Complementary circuits with organic transistors. Appl. Phys. Lett., 1996, 69:4227.
[9] Y.Y.Lin, D.J.Gundlach, S.F.Nelson, et al. Stacked pentacene layer organic thin film transistors with improved characteristics, IEEE Electron Device Lett., 1997, 18:606-608.
[10] Gundlach D J, Klauk H, Sheraw C D, et al. High-mobility, low voltage organic thin film transistors. International Electron Devices Meeting, 1999, 111-114.
[11] Klauk H, Halik M et al. High-mobility polymer gate dielectric pentacene thin film transistors. Journal of Applied Physics, 2002, 92:5259.
[12] Fukuda H, Yamagishi Y et al. Gas sensing properties of poly-3-hexylthiophene thin film transistors. Sensors and Actuators B, 2005, 108:414-417.
[13] Wei Hu, Yi Zhao et al. Improving the performance of the organic thin-film transistors with thin insulating lithium fluoride buffer layer. Microelectronics Journal, 2007, 38:632-636.
[14] Leufgen M, Rost O, Gould C, et al. High-mobility tetrathiafulvalene organic field-effect transistors from solution processing. Organic Electronics, 2008, 9:1101-1106.
[15] Mayumi Uno, Y. Tominari, J. Takeya. Fabrication of high-mobility organic single-crystal field-effect transistors with amorphous fluoropolymer gate insulators. Organic Electronics, 2008, 9:753-756.
[16] J.Kastner, J. Paloheimo, H.Kuzmany. Solid State Science.New York: Spring, 1993:515-521.
[17] Kawakami T, Kitagawa Y, Matsuoka F,et al. Intemational Journal of Quantum Chemstry, 2001, 85:619.
[18] Laurs H, Heiland G. Electrical and optical properties of phthalocyanine films. Thin Solid Films, 1987, 149:129-142.
[19] L.Torsi, A.Dodabalapur, L.Sabbatini, et al. Multi-parameter gas sensors based on organic thin-film-transistors, Sensors and Actuators B, 2000, 67: 312-316.
[20] L.Torsi, A.Dodabalapur, N.Cioffi, et al. NTCDA organic thin-film-transistor as humidity sensor: weaknesses and strengths.Sensors and Acutators B 2001, 77: 7-11.
[21] Maria Cristina Tanese, Daniele Fine, Ananth Dodabalapur,et al. Interface and gate bias dependence responses of sensing organic thin-film transistors, Biosensors and Bioelectronics, 2005, 21: 782-788.
[22] L.Torsi, Maria Cristina Tanese, Nicola Cioffi, et al. Alkoxy-substituted polyterthiophene thin-film-transistors as alcohol sensors. Sensors and Actuators B, 2004, 98:204-207.
[23] Frank Liao, Christopher Chen, Vivek Subramanian. Organic TFTs as gas sensors for electronic nose applications, Sensors and Actuators B, 2005, 107: 849-855.
[24] Rafik Ben Chaabane. Eeffect of measureing environment on the electrical characteristics of NiPc based thin film transistors: The effects of ozone. Materials Science and Engineering 2006, C 26:551-554.
[25] Rafik Ben Chaabane,Adnene Ltaief,L. Taief, et,al Influence of ambient atmosphere on the electrical properties of organic thin film transistors. Materials Science and Engineering 2006, C26:514-518.
[26] Wenping Hu, Yunqi Liu et al. The gas sensitivity of a metal-insulator-semiconductor field-effect transistor based on Langmuir-Blodgett films of a new asymmetrically substituted phthalocyanine. Thin Solid Films, 2000, 360:256-260.
[27] L Torsi, F Marinelli, M D Angione, et al. Contact effects in organic thin-film transistor sensors. Organic Electronics, 2009, 10:233-239.
[28] Zhu Z T, Mason J T, Dieckmann R et al. Humidity sensors based on pentacene thin-film transistors. Appl. Phys. Lett., 2002, 81:4643-4645.
[29] Tanese M C, Fine D, Dodabalapur A, et al. High-performance organic thin film transistor sensors. Proceedings of SPIE, 2004, 55(22):22-26.
[30] Jin Wook Jeong, Yang Doo Lee, Young Min Kim, et al. The response characteristics of a gas sensor based on poly-3-hexylithiophene thin-film transistors. Sensors and Acuators B 2010, 146:40-45.
[31] Xie, Dan; Jiang, Yadong; Pan, Wei; Li, Yanrong A novel microsensor fabricated with charge-flow transistor and a Langmuir-Blodgett organic semiconductor film, Thin Solid Films, 2003, 424(2): 247-252
[32] Bo Liu, Guangzhong Xie, Xiaosong Du, et al. Poly(3-hexylthiophene) based Organic field-effect transistor as NO2 gas sensor. Proc. SPIE, 2009, 7508:55-59.
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