摘要
晶圆级IC测试在经济生产中是非常必要的,通过早期放弃有缺陷的元件部分,可以避免不必要的封装成本,同时,晶圆测试数据还提供了早期整体制造过程状况的反馈,以便及早检测到偏差并采取措施改正。随着VLSI技术向更大级集成和更高速度发展,使得I/O的数量急剧增加,引脚的尺寸和间距缩小,于是产品的检测变得更加关键。而限制测试系统性能的关键元件之一就是探卡。实践证明,传统手工制作的探卡和薄膜型探卡已经越来越难以满足使用要求,MEMS探卡则可以有效地突破传统针卡在配针方向、配针密度、配针精度等方面的限制,能明显地改善探卡在测试运用过程中的稳定性,并最大程度降低由于人为因素而造成的测试问题,提升测试整体的效率,因而成为探卡的发展趋势。本文针对目前MEMS探卡存在的问题和不足,提出了三种新型MEMS探卡结构及其制作工艺,来减少工艺步骤和制作成本,使探卡兼具理想的力学和电学性能,更加具有应用可行性。论文的主要内容及结果如下:
1.采用UV-LIGA工艺制备金属悬臂梁型和简支梁型三维MEMS探卡结构。利用ANSYS有限元软件对悬臂梁和简支梁探针结构进行了受力分析,得出探针位移和最大应力随悬臂梁和简支梁厚度的变化关系。对设计结构进行HFSS高频仿真,得到了四根探针结构S参数在1-20 GHz的变化曲线。通过多次套刻、电镀的UV-LIGA工艺实现了悬臂梁和简支梁结构探卡的制备,解决了工艺中光刻胶和种子层的去除问题。采用Nano Indenter XP纳米压痕仪对制备后的探卡结构进行力学性能测试,测得悬臂梁和简支梁的弹簧常数分别为2556 Nm-1和26280 Nm-1,与2838Nm-1和23935 Nm-1的理论设计值相差9.94%和8.92%;采用直流探针和HP 4194A阻抗分析仪对简支梁型探卡结构进行了电学性能测试,从简支梁探针到引线末端的直流接触电阻为0.6Ω,在5-40 MHz范围内,探针间特征阻抗大于20 kΩ,电容在0.17 pF至0.27 pF之间,测试结果表明探针的接触电阻小、射频隔离性能好。
2.体硅微加工与UV-LIGA复合工艺制备三维悬臂梁型MEMS探卡结构,这种结构可以同时具有金属悬臂梁和硅悬臂梁结构的优点。首先对体硅微加工与UV-LIGA复合工艺方法进行了研究,分别制备了SU-8胶在硅凸台上和凹槽中的三维结构,以及它们的金属模具和PETG热模压复制品。通过对T型截面、两种材料的复合悬臂梁结构进行理论分析,得到了反映复合悬臂梁结构最大挠度随各结构参数变化规律的公式;利用ANSYS有限元方法分析了复合悬臂梁结构的最大挠度和最大应力,分别得出硅层厚度和宽度、铜层厚度和宽度、以及铜层悬臂梁长度对悬臂梁性能影响的规律。采用体硅微加工与UV-LIGA复合工艺方法实现了悬臂梁结构MEMS探卡的制备,并采用Dektak 6M表面轮廓仪、直流探针和HP 4194A阻抗分析仪对制备后的探卡进行了力学性能和电学性能测试。结果表明:力学性能测试结果与理论设计比较吻合;探卡接触电阻仅0.035Ω,直流损耗低;在5-40 MHz射频范围内,探针间特征阻抗在20 kΩ以上,电容值保持在0.13 pF左右,具有很好的隔离性能。
3.以PDMS材料为基底,聚酰亚胺为中间层,制备弹性基底的探卡结构。采用COMSOL软件对设计结构进行二维力学分析,得出探针位移随PDMS层和聚酰亚胺层厚度的变化规律。对探针结构进行HFSS高频仿真,得到了四根圆柱型探针结构S参数在1-20 GHz的变化曲线。通过MEMS加工工艺制备出PDMS弹性基底探卡结构。工艺中,利用单晶硅湿法刻蚀制作台阶基片,来提供外围电路打线高度,并解决电路引线在台阶处间断的问题;应用氧等离子处理方法来提高聚酰亚胺与溅射金属种子层之间的结合力。采用Nano Indenter XP纳米压痕仪对弹性基底和探针结构进行了力学性能测试,当PDMS层厚度为150μm、聚酰亚胺层厚度为50μm时,PDMS和聚酰亚胺基底的弹簧常数为4582 Nm-1,上方电镀金属探针结构的弹簧常数为7317 Nm-1;采用直流探针和HP 4194A阻抗分析仪对制备后的探卡结构进行了电学性能测试,从探针到引线末端的直流接触电阻为1.4Ω,在5-40 MHz测试频率内,探针间特征阻抗大于20 kΩ,电容在0.19pF至0.28 pF之间。
Wafer level IC testing is very essential for economical manufacture because unnecessary packaging costs can be avoided by rejecting defective components at the early stage. In addition, this wafer test data provides early feedback on the overall status of the fabrication process, so that deviations can be detected and corrective action taken with minimum delay. As VLSI technology continues to evolve towards greater levels of integration and higher operating speeds, the I/O number of ICs increases and the dimension and pitch of pads shrinks, the test of these products becomes more and more important. One of the critical components that limit the test system is the probe card. The traditional needle/epoxy probe cards and the membrane probe card become unsuitable, while the MEMS probe card has no limitations of probe direction, density and precision. Furthermore, it can improve the test stability and efficiency, and minimize the influences of operator. So MEMS probe card is the developing trend of probe card technology. In this dissertation, to overcome the problems and shortcomings of current MEMS probe cards, we propose three kinds of new MEMS probe card structures and their fabrication processes, which can reduce the process steps and the fabrication costs, and possess ideal mechanical and electrical properties at the same time. The main contents and results are listed as follows:
1. Study on metal cantilever type and simply supported beam type 3D MEMS probe cards fabricated by UV-LIGA technology. First, ANSYS finite elements analysis software was utilized to simulate their mechanical behavior, and the relationships between the tip displacement and Von Mises stress and the beam thickness was got. HFSS software was used to simulate the high frequency property, and the curves of S parameters of four probe structures at 1-20 GHz were achieved. Then, the cantilever type and simply supported beam type structures probe cards were fabricated by the repeated lithography and electroplating UV-LIGA process, the problems of removal of the photoresist and seed layer were solved. Last, Nano Indenter XP was used to measure the mechanical properties of the fabricated probe structures, the results show that the spring constants of cantilever type and simply supported beam type probe structures were 2556 Nm-1 and 26280 Nm-1 respectively, which were close to the designed values of 2838 Nm-1 and 23935 Nm-1 with the error of 9.94% and 8.92%. DC probes and HP 4194A Impedance/Gain-phase Analyzer were adopted to measure the electrical properties of the simply supported beam probe card. The contact resistance from the probe tip to the end of stripline was 0.6Ω. In the frequency range of 5 to 40 MHz, the characterized impedance between two probes was larger than 20 kΩ, and the capacitance was from 0.17 pF to 0.27 pF. These data proves that the designed probe cards have small contact resistance and good radio frequency isolation property.
2. Study on 3D cantilever MEMS probe card structure fabricated by combining bulk silicon micromachining and UV-LIGA technology. This proposed structure can obtain the advantages of metal structure and silicon structure at the same time. First, the combining technique of bulk silicon micromachining and UV-LIGA technology was studied. 3D SU-8 photoresist standing on the silicon bump and concave microstructures as well as their metal molds and PETG replica were fabricated. Then, through theoretical analyzing the T-section, bi-materials cantilever structure, the equation that reflects the relationship between the maximum displacement and von Mises stress and the structure parameters was achieved. ANSYS finite element method was used to analyze the impact of the Si thickness, Cu thickness, Si width, Cu width and cantilever length on the maximum displacement of the composite cantilever. Last, the cantilever MEMS probe card was fabricated by the combining silicon micromachining and UV-LIGA technology, and its mechanical and electrical properties were measured by Dektak 6M surface profiler stylus, DC probes and HP 4194A Impedance/Gain-phase Analyzer. The mechanical test results agree well with the theoretical design. The probe contact resistance was only 0.035Ω, which means very low DC loss during testing. In the frequency range of 5 to 40 MHz, the characterized impedance between two probes was larger than 20 kΩ, and the capacitance was around 0.13 pF, these results show good radio frequency isolation property.
3. Study on elastic substrate probe card based on PDMS and polyimide. First, COMSOL finite elements analysis software were utilized to simulate the 2D mechanical behavior of the designed structure, the relationship between the tip displacement and the PDMS and PI thickness was got. HFSS was used to simulate its high frequency property, and the curves of S parameters of four column probe structures at 1-20 GHz were achieved. Then, the PDMS elastic probe card was fabricated by MEMS fabrication technology. In the fabrication process, the single crystal silicon wet etching was used to form a step substrate with 54.7 degree angle, so as to provide the height of wire bonding and solve the problem of the interrupted line at the vertical step. Oxygen plasma treatment was adopted to improve the adhesion between PI and seed layer. Last, Nano Indenter XP was employed to measure the mechanical properties of elastic substrate and its upper probe. When the thickness of PDMS and PI was 150μm and 50μm respectively, the spring constant of elastic substrate was 4582 Nm-1, and spring constant of the upper metal probe was 7317 Nm-1. DC probes and HP 4194A Impedance/Gain-phase Analyzer were used to measure the electrical properties of the fabricated probe. The contact resistance from the probe tip to the end of stripline was 1.4Ω. In the frequency range of 5 to 40 MHz, the characterized impedance between two probes was larger than 20 kΩ, and the capacitance was from 0.19pF to 0.28 pF.
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