基于IGBT逆变的直流脉冲电源的研制
摘要
随着半导体制造工艺和技术的高速发展,电力电子系统的应用领域越来越广泛,电子设备的种类也越来越多,电子设备已经是人们的工作、生活中必不可少的工具。任何电子设备都离不开可靠的电源,为了使电子设备安全、稳定和可靠的工作,必然会对它们的电源提出越来越高的要求。现代社会中,由于工作需要必然会对某些工具的硬度有一定的要求,为了满足这个要求,在产品的生产过程中,往往需要对这些产品进行表面镀膜,以增强其耐磨性和耐刮性:譬如日常生活中的自行车车圈和金属器皿等等。在物理化学领域,这属于表面处理改性,需要使某种气体在一个密封的近似真空环境的炉体里进行强电场等离子体电离,使这些等离子体沉积在基件表面形成一层致密的薄膜。只有在真空炉的两个电极施加一定频率的脉冲电压形成等离子体相对而言容易些,而这又需要一个高频脉冲电源。本论文所研制的高频脉冲电源完全可以满足这种需要。为了能够提供大功率的输出,本文所设计的用IGBT作为功率器件的高频脉冲电源采用三相工频交流电电源输入,经过接触器、三相调压模块调压,经过三相整流滤波,通过全桥逆变和高频变压器升压;再次经过高压整流,直流斩波,最终按要求输出所需结果。控制电路采用脉宽调制PWM来控制,使电源设备输出所需要的高频脉冲波。经过理论验证、设计原理图和整套设备调试,基本完成设计要求。
With the rapid development of semiconductor technology, power electronics systems are used more and more widely, and the types of electronic system are growing larger. Electric devices have been essential tools for people’s living and working. Any electric device cannot work without reliable power supply. For making the electric devices working safety, stable and reliable, the requirement to the power supply is more and more strictly. Nowadays, some work has a certain requirement to the hardness of tools. In order to satisfy this requirement, during the process of industrial production, some products need surface deposition in order to increase their abrading resistance and scraping resistance -- Such as bicycle rime and metal vessels. In the domain of physics and chemistry, it is named surface property changing; some gases are at the state of plasma ionization under high electronic force in the vacuum stove, at certain air force and vacuum degree, so the produce in the vacuum stove is on the state of surface plasma ionization. The voltage force at a certain frequency, which is generated from a high frequency pulse supply, is enforced to the two electrodes of the vacuum stove. The high frequency pulse power supply which was researched and designed in the article meets the requirement. In order to provide high power output, the high frequency pulse power supply designed in this article is using IGBT as power device, and the input of this power supply is three phase 50Hz alternating current which is rectified by the three phase SCR and filtered by the large scale capacitors, and then it was inverted by means of full bridge and the voltage is boosted by the high frequency transformer. PWM is adopted in the control circuit, so the high frequency rectangular wave which the device needed can be got. After a theoretical validation, schematic design, and full set of equipment commissioning, and the design requirements are basically complete.
With the rapid development of semiconductor technology, power electronics systems are used more and more widely, and the types of electronic system are growing larger. Electric devices have been essential tools for people’s living and working. Any electric device cannot work without reliable power supply. For making the electric devices working safety, stable and reliable, the requirement to the power supply is more and more strictly. Nowadays, some work has a certain requirement to the hardness of tools. In order to satisfy this requirement, during the process of industrial production, some products need surface deposition in order to increase their abrading resistance and scraping resistance -- Such as bicycle rime and metal vessels. In the domain of physics and chemistry, it is named surface property changing; some gases are at the state of plasma ionization under high electronic force in the vacuum stove, at certain air force and vacuum degree, so the produce in the vacuum stove is on the state of surface plasma ionization. The voltage force at a certain frequency, which is generated from a high frequency pulse supply, is enforced to the two electrodes of the vacuum stove. The high frequency pulse power supply which was researched and designed in the article meets the requirement. In order to provide high power output, the high frequency pulse power supply designed in this article is using IGBT as power device, and the input of this power supply is three phase 50Hz alternating current which is rectified by the three phase SCR and filtered by the large scale capacitors, and then it was inverted by means of full bridge and the voltage is boosted by the high frequency transformer. PWM is adopted in the control circuit, so the high frequency rectangular wave which the device needed can be got. After a theoretical validation, schematic design, and full set of equipment commissioning, and the design requirements are basically complete.
引文
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[26]张国安,李桂祥.移相全桥式IGBT超声波电源的设计[J].电源技术应用,2002(5).
[27]赵彦萍.用PWM放大器实现400Hz电源[J].国外电子元器件,20024(5).
[28]周云,虞培义.采用IGBT的正弦波中频逆变电源[J].电源技术应用,2004(5).
[29] Ulrich Nicolai,Tobias Reimann著.李毅,魏宇浩译.现代功率模块及器件应用技术[J].电源技术应用,2005(1).
[30]陶海敏,李颜峰.功率电压型逆变器新型组合式IGBT过流保护方案[J].电源技术应用,2002(5).
[31]林青松.8098单片机控制的IGBT半桥式逆变电源的研制.1997年全国第八届焊接学会会议论文集.
[32]日本三菱电气.第三代IGBT和智能功率模块应用手册及DATABOOK,1998.
[33]林渭勋.现代电力电子电路[M].浙江:浙江大学出版社,2006.
[34]刘修文.实用电子电路图集[M].北京:中国电力电子出版社,2006.
[35]户川治明著,高玉萍,唐伯雁译.实用电源电路设计[M].北京:科学出版社,2006.
[36]王兆安,黄俊.电力电子技术[M].北京:机械工业出版社,2006.
[37]周志敏.浪涌电压抑制器及应用[J].电源技术,2001,(8).
[38]周志敏.推广交流变频技术与可持续发展战略[J].变频世界,1999,(5).
[2]周志敏,周纪海,纪爱华.变频电源技术——设计与应用[M].北京:中国电力出版社,2005.
[3]陈义怀,胡卫华.IGBT的保护[J].电源技术的应用,2004(5).
[4]丁浩华.带电流和短路保护的IGBT驱动电路研究[J].电力电子技术,1997(1).
[5]范桢,蔡晓勇等.电感分列式推免换向软开关技术的研究[J].电源技术应用,2000(9).
[6]黄宏.一种新型SPWM中频电源的研制[J].电源技术应用,2000(10).
[7]黄超敏,徐德鸿.全桥电流源高频连逆变器[J].电源技术应用,2000(1).
[8]蒋怀刚,李乔.IGBT模块驱动及保护电路[J].电源技术应用,2003(4).
[9]康劲松,郎玉峰.IGBT集成驱动模块的应用研究[J].电工技术杂志,2000(5).
[10]冷增祥.IGBT高压变频调速电源[J].电源技术应用,2000(7).
[11]李金鹏,侯聪玲.无源无损缓冲电路及其新拓扑[J].电源技术应用,2003(9).
[12]刘振来,叶浩屹.一种实用的逆变桥功率开关门极关断钳位电路[J].电源技术应用,2004(1).
[13]卢家林,苏彦民.30kVA逆变电源中IGBT的驱动与保护[J].电源技术应用,2000(8).
[14]马小林,马皓.推免变换器在软开关与硬开关工作模式下的比较研究[J].电源技术应用,2003(8).
[15]明正峰,倪光正.大功率谐振过渡软开关变频器研究[J].电源技术应用,2003(9).
[16]明正峰,童建利.三相逆变器中IGBT的几种驱动电路分析[J].电源技术应用,2002(4).
[17]舒正国.美国CDE电容模块在缓冲电路中的应用[J].电源技术应用,2001(7).
[18]孙伟远,刘虹.高压IGBT变频器及应用[J].电源技术应用,2001(4).
[19]冷增祥.IGBT高压变频调速电源[J].电源技术应用,2000(7).
[20]王水平,王家荣.脉冲激光电源的设计与研制[J].电源技术应用,2003(3).
[21]王维忠,任天良.IGBT逆变电式电焊机的研制[J].国外电子元器件,21994(3).
[22]吴保芳,罗文杰.一种具有高频环节的SPWPM变换电路的研究[J].电力电子技术,1998(4).
[23]吴为民,夏勇.一种采用智能功率模块的调压调频高压电源[J].电压技术技术,2000(1).
[24]叶汉民,李小燕.一种120kV的电子束焊机用的高压直流电源装置[J].电源技术应用,2001(5).
[25]张光先,邹增大.软开关逆变式弧焊电源的设计[J].焊接学报,2002(1).
[26]张国安,李桂祥.移相全桥式IGBT超声波电源的设计[J].电源技术应用,2002(5).
[27]赵彦萍.用PWM放大器实现400Hz电源[J].国外电子元器件,20024(5).
[28]周云,虞培义.采用IGBT的正弦波中频逆变电源[J].电源技术应用,2004(5).
[29] Ulrich Nicolai,Tobias Reimann著.李毅,魏宇浩译.现代功率模块及器件应用技术[J].电源技术应用,2005(1).
[30]陶海敏,李颜峰.功率电压型逆变器新型组合式IGBT过流保护方案[J].电源技术应用,2002(5).
[31]林青松.8098单片机控制的IGBT半桥式逆变电源的研制.1997年全国第八届焊接学会会议论文集.
[32]日本三菱电气.第三代IGBT和智能功率模块应用手册及DATABOOK,1998.
[33]林渭勋.现代电力电子电路[M].浙江:浙江大学出版社,2006.
[34]刘修文.实用电子电路图集[M].北京:中国电力电子出版社,2006.
[35]户川治明著,高玉萍,唐伯雁译.实用电源电路设计[M].北京:科学出版社,2006.
[36]王兆安,黄俊.电力电子技术[M].北京:机械工业出版社,2006.
[37]周志敏.浪涌电压抑制器及应用[J].电源技术,2001,(8).
[38]周志敏.推广交流变频技术与可持续发展战略[J].变频世界,1999,(5).