纳米MOSFET毫米波噪声的简洁模型
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摘要
为了使复杂的纳米MOSFET毫米波噪声物理模型可用于工程设计,研究了其简洁模型的表达形式。通过器件的双端口相关噪声矩阵变换和分析,实现了复杂的噪声物理模型的简化。所提出的简洁模型不仅高精度地表征了器件的非准静态效应,并且可通过Verilog-A语言以四结点的形式,直接嵌入到ADS仿真设计工具,从而在保证精度的同时,大大降低了设计的复杂度。实验结果验证了所建模型在强反型区和弱反型区均比现有的三结点模型具有更高的准确性。
In order to apply the complex physical model of millimeter-wave noise of nano-MOSFET to engineering design,the expression of its compact model is studied.The complex noise physical model is simplified by transforming and analyzing the two-port correlation noise matrix of the device.The compact model proposed here not only expresses the non-quasi-static effect of the device with high precision,but also can be directly embedded into the ADS simulation design tool by Verilog-A language in the form of four nodes,thus ensuring the accuracy and greatly reducing the design complexity.The experimental results show that the proposed model is more accurate in both strong and weak inversion regions than the existing three-node model.
In order to apply the complex physical model of millimeter-wave noise of nano-MOSFET to engineering design,the expression of its compact model is studied.The complex noise physical model is simplified by transforming and analyzing the two-port correlation noise matrix of the device.The compact model proposed here not only expresses the non-quasi-static effect of the device with high precision,but also can be directly embedded into the ADS simulation design tool by Verilog-A language in the form of four nodes,thus ensuring the accuracy and greatly reducing the design complexity.The experimental results show that the proposed model is more accurate in both strong and weak inversion regions than the existing three-node model.
引文
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[6]王军,王林,王丹丹.40nm金属氧化物半导体场效应晶体管感应栅极噪声及互相关噪声频率与偏置依赖性建模[J].物理学报,2016,65:237102.(Wang Jun,Wang Lin,Wang Dandan.Frequency and bias dependent modeling of induced gate noise and cross-correlation noise in 40nm metal-oxide-semiconductor field-effect transistors.Acta Physica Sinica,2016,65:237102)
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[9]李博,王军.45nm MOSFET毫米波小信号等效电路模型参数提取技术[J].强激光与粒子束,2019,31:024101.(Li Bo,Wang Jun.Parameter extraction technique of millimeter wave small-signal equivalent circuit model of 45nm MOSFET.High Power Laser and Particle Beams,2019,31:024101)
[2] Chalkiadaki M A,Enz C C.Accurate RF modeling of nanoscale MOSFET using BSIM6including low levels of inversion[J].Microelectronics Journal,2014,45(9):1159-1167.
[3] Lin D W,Cheng M L,Wang S W,et al.A novel method of MOSFET series resistance extraction featuring constant mobility criteria and mobility universality[J].IEEE Trans Electron Devices,2010,57(4):890-897.
[4] Chan L H K,Yeo K S,Chew K W J,et al.High-frequency noise modeling of MOSFETs for ultra low-voltage RF applications[J].IEEE Trans Microwave Theory&Techniques,2014,63(1):141-154.
[5] Ong S N,Yeo K S,Chew K W J,et al.A new field dependent mobility model for high frequency channel thermal noise of deep submicron RFCMOS[J].Solid-State Electronics,2012,68(3):32-37.
[6]王军,王林,王丹丹.40nm金属氧化物半导体场效应晶体管感应栅极噪声及互相关噪声频率与偏置依赖性建模[J].物理学报,2016,65:237102.(Wang Jun,Wang Lin,Wang Dandan.Frequency and bias dependent modeling of induced gate noise and cross-correlation noise in 40nm metal-oxide-semiconductor field-effect transistors.Acta Physica Sinica,2016,65:237102)
[7] Chan L H K,Yeo K S,Chew K W J,et al.MOSFET drain current noise modeling with effective gate overdrive and junction noise[J].IEEE Electron Device Letters,2012,33(8):1117-1119.
[8] Langevelde R V,Paasschens J C J,Scholten A J,et al.New compact model for induced gate current noise[C]//IEEE International Electron Devices Meeting.2003.
[9]李博,王军.45nm MOSFET毫米波小信号等效电路模型参数提取技术[J].强激光与粒子束,2019,31:024101.(Li Bo,Wang Jun.Parameter extraction technique of millimeter wave small-signal equivalent circuit model of 45nm MOSFET.High Power Laser and Particle Beams,2019,31:024101)