基于喷墨打印的In_2O_3/IGZO TFT的电学性能
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摘要
利用喷墨打印技术制备了非晶铟镓锌氧化物(IGZO)薄膜、铟氧化物(In_2O_3)薄膜和性能明显改善的双层In_2O_3/IGZO异质结沟道薄膜,研究了薄膜的物理与电学特性。结果表明,喷墨打印制备的金属氧化物薄膜具有较高的光学透过率与较低的表面粗糙度;嵌入的In_2O_3层薄膜能减小IGZO与In_2O_3间的界面缺陷,明显提高In_2O_3/IGZO薄膜晶体管(TFT)的性能及其偏压稳定性。随着IGZO中In含量的增加,载流子浓度升高,器件的迁移率增大,但In_2O_3与IGZO间能级势垒会逐渐降低,最后导致难以控制关态电流和阈值电压,因此,适当调整In的比例有利于获得较高器件性能的In_2O_3/IGZO异质结沟道TFT。
Amorphous indium gallium zinc oxide(IGZO) films, indium oxide(In_2O_3) films and double-layer In_2O_3/IGZO heterojunction channel films with improved performance were successfully fabricated by inkjet printing technology, and the physical and electrical properties of these films were investigated. The results show that the metal oxide films prepared by inkjet printing have high optical transmittance and low surface roughness; and the embedded In_2O_3 layer films can reduce the interface defects between IGZO and In_2O_3 and significantly improve the performance and bias stability of In_2O_3/IGZO thin film transistors(TFTs). As the In content in IGZO thin films increases, the carrier concentration increases, and device mobility increases, but the energy barrier between In_2O_3 and IGZO decreases, which ultimately makes it difficult to control off-state current and threshold voltage. Therefore, tuning the In contents in metal oxide thin films is beneficial to obtain higher device performance of In_2O_3/IGZO heterojunction channel TFTs.
Amorphous indium gallium zinc oxide(IGZO) films, indium oxide(In_2O_3) films and double-layer In_2O_3/IGZO heterojunction channel films with improved performance were successfully fabricated by inkjet printing technology, and the physical and electrical properties of these films were investigated. The results show that the metal oxide films prepared by inkjet printing have high optical transmittance and low surface roughness; and the embedded In_2O_3 layer films can reduce the interface defects between IGZO and In_2O_3 and significantly improve the performance and bias stability of In_2O_3/IGZO thin film transistors(TFTs). As the In content in IGZO thin films increases, the carrier concentration increases, and device mobility increases, but the energy barrier between In_2O_3 and IGZO decreases, which ultimately makes it difficult to control off-state current and threshold voltage. Therefore, tuning the In contents in metal oxide thin films is beneficial to obtain higher device performance of In_2O_3/IGZO heterojunction channel TFTs.
引文
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[5] KAMIYA T,HOSONO H.Material characteristics and applications of transparent amorphous oxide semicon ductors [J].NPG Asia Materials,2010,2(1):15-22.
[6] SONG K,NOH J,JUN T,et al.Fully flexible solution-deposited ZnO thin-film transistors [J].Advanced Materials,2010,22 (38):4308-4312.
[7] KIM M G,KANATZIDIS M G,FACCHETTI A,et al.Low-temperature fabrication of high-performance metal oxide thin-film electronics via combustion processing [J].Nature Materials,2011,10(5):382-388.
[8] LIM K H,LEE J,HUH J E,et al.A systematic study on effects of precursors and solvents for optimization of solution-processed oxide semiconductor thin-film transistors [J].Journal of Materials Chemistry:C,2017,5(31):7768-7776.
[9] XIE M L,WU S J,CHEN Z,et al.Performance improvement for printed indium gallium zinc oxide thin-film transistors with a preheating process [J].RSC Advances,2016,6(47):41439-41446.
[10] KAMIYA T,NOMURA K,HOSONO H.Present status of amorphous In-Ga-Zn-O thin-film transistors [J].Science and Technology of Advanced Materials,2010,11(4):44305-41312.
[11] WU S,ZHANG Q,CHEN Z,et al.Inkjet printing of oxide thin film transistor arrays with small spacing with polymer-doped metal nitrate aqueous ink [J].Journal of Materials Chemistry:C,2017,5(30):7495-7503.
[12] LI Y Z,LAN L F,SUN S,et al.All inkjet-printed me-tal-oxide thin-film transistor array with good stability and uniformity using surface-energy patterns [J].ACS Applied Materials and Interfaces,2017,9(9):8194-8200.
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[14] KRAUSMANN J,SANCTIS S,ENGSTLER J,et al.Charge transport in low-temperature processed thin-film transistors based on indium oxide/zinc oxide heterostructures [J].ACS Applied Materials and Interfaces,2018,10(24):20661-20671.
[15] NAM S,YANG J H,CHO S H,et al.Solution-processed indium-free ZnO/SnO2 bilayer heterostructures as a low-temperature route to high-performance metal oxide thin-film transistors with excellent stabilities [J].Journal of Materials Chemistry:C,2016,4(47):11298-11304.
[16] KIM J,JI K H,JUNG H Y,et al.Improvement in both mobility and bias stability of ZnSnO transistors by inserting ultra-thin InSnO layer at the gate insulator/channel interface [J].Applied Physics Letters,2011,99(12):122102-1-122102-3.
[17] KIM K M,JEONG W H,KIM D L,et al.Low-temperature solution processing of AlInZnO/InZnO dual-channel thin-film transistors [J].IEEE Electron Device Letters,2011,32(9):1242-1244.
[18] RIM Y S,CHEN H,KOU X,et al.Boost up mobility of solution-processed metal oxide thin-film transistors via confining structure on electron pathways [J].Advanced Materials,2014,26(25):4273-4278.
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[21] ABLIZ A,HUANG W,WANG J,et al.Rational design of ZnO∶H/ZnO bilayer structure for high performance thin-film transistors [J].ACS Applied Materials and Interfaces,2016,8(12):7862-7868.
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[26] ABLIZ A,WANG J L,XU L,et al.Boost up the electrical performance of InGaZnO thin film transistors by inserting an ultrathin InGaZnO∶H layer [J].Applied Physics Letters,2016,108(21):213501-1-213501-5.
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