HWCVD法掺氧氢化非晶硅(a-SiO_x:H)钝化n-Cz-Si研究
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摘要
HIT电池高效率核心技术之一为本征非晶硅薄膜钝化硅片。本文采用热丝化学气相沉积(HWCVD)法制备a-SiO_x:H,采用SintonWCT-120少子寿命测试仪、光谱型椭偏仪及傅里叶红外光谱测试仪分析样品性能,以期获得高质量a-SiO_x:H的工艺参数并分析微观机理。结果表明:①随热丝电流增加,沉积a-SiO_x:H膜的样品少子寿命先增加后减小,22.5 A时钝化效果最好,少子寿命高达2530μs,表面复合速率降至3.6 cm/s;②本实验结果中,a-SiO_x:H钝化效果明显优于a-Si:H,少子寿命最高分别为2530和547μs;③a-SiO_x:H薄膜中SiH、SiH_2相对含量与薄膜钝化性能无直接关联。
The oxygen doped hydrogenated amorphous silicon(a-SiO_x∶H) thin films,for fabrication of heterojunction with intrinsic thin layer(HIT) solar cells,were synthesized by hot filament chemical vapor deposition(HWCVD) on substrate of n-type Si(100).The influence of the filament current on properties of n-Si(100) substrate was investigated by minority carrier life-time measurement and with ellipsometry and Fourier transform infrared spectroscopy.The results show that depending on the filament current,the passivation of a-SiO_x:H was more effective than that of a-Si:H.For example,as the current increased,the minority carrier lifetime of n-Si(100) changed in an increase-decrease mode;passivated at an optimized current of 22.5 A,the minority carrier lifetime increased to 2530 μs and the surface recombination rate decreased to 3.6 cm/s.Moreover,the passivation did not directly relate to the relative contents of SiH and SiH_2 in a-SiO_x∶H layer.
The oxygen doped hydrogenated amorphous silicon(a-SiO_x∶H) thin films,for fabrication of heterojunction with intrinsic thin layer(HIT) solar cells,were synthesized by hot filament chemical vapor deposition(HWCVD) on substrate of n-type Si(100).The influence of the filament current on properties of n-Si(100) substrate was investigated by minority carrier life-time measurement and with ellipsometry and Fourier transform infrared spectroscopy.The results show that depending on the filament current,the passivation of a-SiO_x:H was more effective than that of a-Si:H.For example,as the current increased,the minority carrier lifetime of n-Si(100) changed in an increase-decrease mode;passivated at an optimized current of 22.5 A,the minority carrier lifetime increased to 2530 μs and the surface recombination rate decreased to 3.6 cm/s.Moreover,the passivation did not directly relate to the relative contents of SiH and SiH_2 in a-SiO_x∶H layer.
引文
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[2] Chu Yen-Ho,Lee Chien-Chieh,Chang Teng-Hsiang,et al.Investigation of Hydrogenated Amorphous Silicon as Passivation Layer by High Density Plasma[J].Thin Solid Films,2014,570:571-574
[3] 王祖强,王丹名,林伟,等.PECVD制备氢化非晶硅薄膜的氢含量研究[J].材料导报,2011,25(17):332-335
[4] Wiesmann H,Gosh A K,McMahon T,et al.a-Si∶H Produced by High-Temperature Thermal Decomposition of Silane[J].J Appl Phys,1979,50:3752-3754
[5] 沈文忠,李正平.硅基异质结太阳电池物理与器件[M].北京:科学出版社,2014:126-129
[6] Wang Qi.Hot-Wire CVD Amorphous Si Materials for Solar Cell Application[J].Thin Solid Films,2009,517:3570-3574
[7] Mueller T J,Schwerthelm S,Fahmer W R.Crystalline Silicon Surface Passivation by High-Frequency Plasma-Enhanced Chemical-Vapor-Deposited Nanocomposite Silicon Suboxides for Solar Cell Application[J].Journal of Applied Physics,2010,107(1):014504
[8] 黄海宾,张东华,汪已琳,等.a-SiOx∶H钝化Cz-Si表面的工艺优化与机制分析[J].功能材料,2014,45(9):9101-9103
[9] 黄海宾.热丝CVD法制备硅基薄膜材料及相关太阳电池模拟研究[D].南京:南京航空航天大学,2010:8-10
[10] Morral A F,Cabarrocas P R.Structure and Hydrogen Content of Polymorphous Silicon Thin Films Studied by Spectroscopic Ellipsometry and Nuclear Measurements[J].Physical Review,2004,B69:125307
[11] Thomas Mueller,Stefan Schwertheim,Wolfgang R Fahrner.Crystalline Silicon Surface Passivation by High-Frequency Plasma Enhanced Chemical Vapor-Deposited Nanocomposite Silicon Suboxides for Solar Cell Applications[J].Journal of Applied Physics,2010,107:014504
[12] Levi D,Iwaniczko E,Page M,et al.Silicon Heterojunction Solar Cell Characterization and Optimization Using in Situ and Ex Situ Spectroscopic Ellipsometry[C].HaGwaii:IEEE,2006
[13] 何玉平.非晶硅/晶体硅异质结太阳电池的钝化材料与器件结构研究[D].南昌:南昌大学,2017
[14] Zhao Lei,Diao Hongwei,Zeng Xiangbo,et al.Comparative Study of the Surface Passivation on Crystalline Silicon by Silicon Thin Films with Different Structures[J].Physica,2010,B405:61–64
[15] Ouwens J D,Schropp R.Hydrogen Microstructure in Hydrogenated Amorphous Silicon[J].Physical Review,1996,B54(24):17759
[16] 何玉平,黄海宾,龚洪勇,等.a-Si∶H基薄膜中SiH及SiH2键构成对n型直拉单晶硅片钝化效果的影响研究[J].真空科学与技术学报,2015,35(8):970-974