贵金属纳米颗粒-二维过渡金属硫化物复合纳米结构:制备技术与光电性能综述
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摘要
过渡金属硫化物是由过渡金属元素和硫族元素构成,结构通式为MX2,其中M和X分别代表过渡金属和硫族元素。与石墨烯类似,过渡金属硫化物也是二维层状材料,层内由共价键键合形成六角网状结构,层间由范德华力相互作用堆积而成。然而,纯的石墨烯的零带隙限制了其在大多数电子和光电子上的应用。相反,已有研究表明,MoS2由块体材料厚度逐渐减小为单层材料时,其能带结构由间接带隙转变为直接带隙。同样,电子输运测试结果表明,二维过渡金属硫化物具有高的载流子迁移率、大的开关比等。但是二维过渡金属硫化物光吸收及光发射强度低,在很大程度上限制了该材料在光电领域的应用。为了突破二维过渡金属硫化物自身光吸收和光发射强度低的局限性,科研工作者将贵金属纳米颗粒独特的等离激元共振效应作为激发泵浦,增强二维过渡金属硫化物的光致发光效率,使贵金属纳米颗粒-二维过渡金属硫化物复合纳米结构展现出独特的光学性能和电学性能,为其在光学、生物、存储、电学以及催化等领域的应用开辟了新的道路。目前,对贵金属纳米颗粒-二维过渡金属硫化物复合纳米结构的研究,主要集中在利用贵金属纳米球、纳米棒、纳米岛、纳米盘、纳米天线、纳米核壳等结构对光进行汇聚,激发贵金属纳米结构中的表面等离激元,再将能量转移给二维过渡金属硫化物,进而在其中产生高强度的光吸收和光发射,对其光学特性产生明显的调制作用,并研究该复合纳米结构的光致发光和光生电流的增强特性。前期报道中主要采用电子束刻蚀、旋涂、浸润等方法来构筑复合纳米结构,但以上方法构筑的复合纳米结构中贵金属纳米颗粒沉积位置不可控,无序的纳米颗粒易在过渡金属硫化物的边缘和缺陷位置沉积,导致基面位置纳米颗粒厚度不均匀,这就在一定程度上限制了该复合纳米结构的应用。另外,当前关于贵金属纳米颗粒的形貌、尺寸、排列方式及间距等结构参数对复合纳米结构光电性能的影响的研究较少。本文综述了几种贵金属纳米颗粒-二维过渡金属硫化物复合纳米结构的构筑方法,并综合对比了不同构筑方法的利弊,评述了其光致发光和光生电流强度的改变,最后结合本课题组的研究工作展望了贵金属纳米颗粒-二维过渡金属硫化物复合纳米结构的发展前景。
The transition metal dichalcogenides( TMDs) is a family compounds with a formula of MX2,where M and X represent a transition metal and chalcogen,respectively. TMDs are two-dimensional( 2 D) layered materials like graphene,with a covalently bonded hexagonal network in layers stacked by weak van der Waals forces between layers. However,the zero band gap of pristine graphene seriously restricted its application in most electronic and optoelectronic fields,while the Mo S2 submits to a transition from indirect band gap in bulk to a direct band gap in single atom layer. Further transport measurements demonstrate that the field-effect transistors made of TMDs single layer possess high mobility and large on/off ratio. Nevertheless,the applications of TMDs are limited due to their poor light absorption and emission,specially in some light-driven related field. Hence,for the sake of acquiring more superior optoelectronic materials,scientists creatively introduced a heterogeneous integration of the noble metal nanoparticles( NM NPs) and 2 D TMDs thin films and utilize the surface plasmon resonance( SPR) of NM NPs as a excitation pump to strengthen the photoluminescence( PL) intensity of 2 D TMDs. The hybrids of NM NPs and 2 D TMDs exhibit unique optical,electronic,and photoelectrical properties,which hold great promise for their application in expansive fields,including optics,biology,memory materials,electronics and catalysis.Currently,with regard to the studies on the structure of NM NPs-2 D TMDs hybrids,researchers mainly take advantages of diverse structures of NM NPs,including nanospheres,nanorods,nano-islands,nanodisks,nano-antennas and nano core-shell structures to enhance the light absorption,and excite the surface plasmon polaritons in the nm nanostructures,then transfer the energy to 2 D TMDs for stimulating the high-intensity light absorption and light emission,and finally realize the modulation of its optical properties. Study on the enhancement characteristics of photoluminescence and photocurrent of the hybrids nanostructures have been carried out as well. To date,the method of fabricating hybrids nanostructures are mainly concentrated on electron beam etching,spin coating,infiltration,etc. However,those hybrids nanostructures built by the methods mentioned above exist some defects,for example,the deposition position of the NM NPs is uncontrollable,and the disordered nanoparticles are easily deposited at the edges and defects of the TMDs,resulting in rough thickness of the nanoparticles film on the surface,which restrict their applications to a certain extent. In addition,there is little investigations relating to the impact of the structure parameters like the morphology,size,arrangement and spacing of the NM NPs on photoelectricity properties of the hybrids nanostructures.Herein,this article rovides a review on several construction methods of the NM NPs-2 D TMDs hybrids,comprehensive analysis on their merits and demerits,and discussion of the changes of PL and PC intensities compared with TMDs. Finally,based on the research direction of our group,this article looks into the distance of future developments and challenges for the hybrids of NM NPs and 2 D TMDs.
The transition metal dichalcogenides( TMDs) is a family compounds with a formula of MX2,where M and X represent a transition metal and chalcogen,respectively. TMDs are two-dimensional( 2 D) layered materials like graphene,with a covalently bonded hexagonal network in layers stacked by weak van der Waals forces between layers. However,the zero band gap of pristine graphene seriously restricted its application in most electronic and optoelectronic fields,while the Mo S2 submits to a transition from indirect band gap in bulk to a direct band gap in single atom layer. Further transport measurements demonstrate that the field-effect transistors made of TMDs single layer possess high mobility and large on/off ratio. Nevertheless,the applications of TMDs are limited due to their poor light absorption and emission,specially in some light-driven related field. Hence,for the sake of acquiring more superior optoelectronic materials,scientists creatively introduced a heterogeneous integration of the noble metal nanoparticles( NM NPs) and 2 D TMDs thin films and utilize the surface plasmon resonance( SPR) of NM NPs as a excitation pump to strengthen the photoluminescence( PL) intensity of 2 D TMDs. The hybrids of NM NPs and 2 D TMDs exhibit unique optical,electronic,and photoelectrical properties,which hold great promise for their application in expansive fields,including optics,biology,memory materials,electronics and catalysis.Currently,with regard to the studies on the structure of NM NPs-2 D TMDs hybrids,researchers mainly take advantages of diverse structures of NM NPs,including nanospheres,nanorods,nano-islands,nanodisks,nano-antennas and nano core-shell structures to enhance the light absorption,and excite the surface plasmon polaritons in the nm nanostructures,then transfer the energy to 2 D TMDs for stimulating the high-intensity light absorption and light emission,and finally realize the modulation of its optical properties. Study on the enhancement characteristics of photoluminescence and photocurrent of the hybrids nanostructures have been carried out as well. To date,the method of fabricating hybrids nanostructures are mainly concentrated on electron beam etching,spin coating,infiltration,etc. However,those hybrids nanostructures built by the methods mentioned above exist some defects,for example,the deposition position of the NM NPs is uncontrollable,and the disordered nanoparticles are easily deposited at the edges and defects of the TMDs,resulting in rough thickness of the nanoparticles film on the surface,which restrict their applications to a certain extent. In addition,there is little investigations relating to the impact of the structure parameters like the morphology,size,arrangement and spacing of the NM NPs on photoelectricity properties of the hybrids nanostructures.Herein,this article rovides a review on several construction methods of the NM NPs-2 D TMDs hybrids,comprehensive analysis on their merits and demerits,and discussion of the changes of PL and PC intensities compared with TMDs. Finally,based on the research direction of our group,this article looks into the distance of future developments and challenges for the hybrids of NM NPs and 2 D TMDs.
引文
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