Si离子辐照下Al_2O_3栅介质的漏电机制
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摘要
基于Al/Al_2O_3/Si金属氧化物半导体(MOS)电容结构研究了30 MeV Si离子辐照前后Al_2O_3栅介质的泄漏电流输运机制。研究结果表明,相较于辐照前,Si离子辐照在栅介质层引起的正电荷俘获导致Al_2O_3与Si衬底界面处的势垒高度降低,使辐照后Al_2O_3栅介质层的漏电流随着Si离子注量的增加而增加。通过对弗伦克尔-普尔(FP)发射、肖特基发射(SE)和福勒-诺德海姆(FN)隧穿等泄漏电流输运机制的分析表明,未辐照时Al_2O_3栅介质层的泄漏电流输运以FP发射和FN隧穿为主,而经Si离子辐照后的Al_2O_3栅介质层泄漏电流输运主要由FP发射引起,并不受FN隧穿的影响。研究结果还表明,辐照前后Al_2O_3栅介质层的泄漏电流输运机制与栅介质层厚度无关。
The leakage current transport mechanism of Al_2O_3 gate dielectric before and after 30 MeV Si ion irradiation was studied based on Al/Al_2O_3/Si metal oxide semiconductor(MOS) capacitor structure. The research results show that compared with the pre-irradiation case, the positive charge trapping caused by Si ion irradiation in the gate dielectric layer leads to a decrease in the barrier height at the interface between the Al_2O_3 and the Si substrate. After irradiation, the leakage current of Al_2O_3 gate dielectric layer increases with the increase of Si ion fluence. The analyses of leakage current transport mechanisms such as Frenkel-Poole(FP) emission, Schottky emission(SE) and Fowler-Nordheim(FN) tunneling and so on show that the leakage current transport of the Al_2O_3 gate dielectric layer before irra-diation is dominated by FP emission and FN tunneling, but is mainly caused by FP emission and is not affected by FN tunneling for the post-irradiation case. The studies also reveal that the leakage current transport mechanism of the Al_2O_3 gate dielectric layer before and after irradiation is independent of the thickness of the gate dielectric layers.
The leakage current transport mechanism of Al_2O_3 gate dielectric before and after 30 MeV Si ion irradiation was studied based on Al/Al_2O_3/Si metal oxide semiconductor(MOS) capacitor structure. The research results show that compared with the pre-irradiation case, the positive charge trapping caused by Si ion irradiation in the gate dielectric layer leads to a decrease in the barrier height at the interface between the Al_2O_3 and the Si substrate. After irradiation, the leakage current of Al_2O_3 gate dielectric layer increases with the increase of Si ion fluence. The analyses of leakage current transport mechanisms such as Frenkel-Poole(FP) emission, Schottky emission(SE) and Fowler-Nordheim(FN) tunneling and so on show that the leakage current transport of the Al_2O_3 gate dielectric layer before irra-diation is dominated by FP emission and FN tunneling, but is mainly caused by FP emission and is not affected by FN tunneling for the post-irradiation case. The studies also reveal that the leakage current transport mechanism of the Al_2O_3 gate dielectric layer before and after irradiation is independent of the thickness of the gate dielectric layers.
引文
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[4] TROJMAN L.Study of mobility for HfO2 dielectric FDSOI-UTTB PMOS under substrate biases [J].IEEE Latin America Transactions,2016,14(10):4235-4240.
[5] SURIA A J,CHIAMORI H C,SHANKAR A,et al.Capacitance-voltage characteristics of gamma irradiated Al2O3,HfO2,and SiO2 thin films grown by plasma-enhanced atomic layer deposition [C] //Proceedings of Sensors for Extreme Harsh Environments II.Baltimore,MD,USA,2015:949105-1-949105-8.
[6] FELIX J A,SHANEYFELT M R,SCHWANK J R,et al.Enhanced degradation in power MOSFET devices due to heavy ion irradiation [J].IEEE Transactions on Nuclear Science,2007,54(6):2181-2189.
[7] LAHA P,BANERJEE I,BARHAI P K,et al.Effects of 6 MeV electron irradiation on the electrical properties and device parameters of Al/Al2O3/TiO2/n-Si MOS capacitors[J].Nuclear Instruments and Methods in Physics Research:B,2012,283:9-14.
[8] RAFí J M,CAMPABADAL F,OHYAMA H,et al.2 MeV electron irradiation effects on the electrical characteristics of metal-oxide-silicon capacitors with atomic layer deposited Al2O3,HfO2,and nanolaminated dielectrics [J].Solid-State Electronics,2013,79(1):65-74.
[9] RAO A,CHAURASIA P,SINGH B R.Swift ion irradiation effect on high-k ZrO2- and Al2O3-based MOS devices [J].Radiation Effects and Defects in Solids,2016,171(3/4):1-15.
[10] SROUR J R,MARSHALL C J,MARSHALL P W,et al.Review of displacement damage effects in silicon devices [J].IEEE Transactions on Nuclear Science,2003,50(3):653-670.
[11] CESCHIA M,PACCAGNELLA A,TURRINI M,et al.Heavy ion irradiation of thin gate oxides [J].IEEE Transactions on Nuclear Science,2000,47(6):2648-2655.
[12] CELLERE G,PELLATI P,CHIMENTON A,et al.Radiation effects on floating-gate memory cells [J].IEEE Transactions on Nuclear Science,2001,48(6):2222-2228.
[13] KUANG Q W,LIU H X,ZHOU W,et al.Transport mechanism of the leakage current in MIS capacitor with HfO2/SiO2 stack gate [C]//Proceedings of IEEE International Conference of Electron Devices and Solid-State Circuits.Xi'an,China,2010:229-232.
[14] ZHU H P,ZHENG Z S,LI B,et al.Total dose effect of Al2O3-based metal-oxide-semiconductor structures and its mechanism under gamma-ray irradiation [J].Semiconductor Science and Technology,2018,33(11):115010-1-115010-8.
[15] SZE S M.Physics of semiconductor devices [M].3rd ed.New York:John Wiley and Sons Inc,2006:197-240.
[16] CHOI C H,GOO J S,OH T Y,et al.MOS C-V characterization of ultrathin gate oxide thickness (1.3-1.8 nm)[J].IEEE Electron Device Letters,1999,20(6):292-294.
[17] YANG W L,MARINO J,MONSON A,et al.An investigation of annealing on the dielectric performance of TiO2 thin films [J].Semiconductor Science and Technology,2006,21(12):1573-1579.
[18] HESTO P.The nature of electronic conduction in thin insulating layers [M].Elsevier:NorthHolland.1986:263-314.
[19] LUDEKE R,CUBERES M T,CARTIER E.Local tran-sport and trapping issues in Al2O3 gate oxide structures [J].Applied Physics Letters,2000,76(20):2886-2888.