Effects of V-pits covering layer position on the optoelectronic performance of InGaN green LEDs
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摘要
The impact of the V-pits covering layer(VCL) position on the optoelectronic performance of InGaN-based green light-emitting diodes(LEDs) was investigated. It is found that earlier covering of V-pits will hinder the hole injection via the sidewall of V-pits, and then result in less quantum wells(QWs) participating in radioluminescence. The current-voltage characteristics show that the LEDs with earlier covering of V-pits have higher operating voltage at room temperature, and a more dramatic voltage rise with the reduction of temperature. Meanwhile, more manifested emission peaks for sidewall QWs and deeper QWs near to ntype layer was observed in the sample with earlier coveing of V-pits at cryogenic temperatures, for the reason that the holes being injected via V-pits sidewall have higher kinetic energy and could transport to deeper QWs.
The impact of the V-pits covering layer(VCL) position on the optoelectronic performance of InGaN-based green light-emitting diodes(LEDs) was investigated. It is found that earlier covering of V-pits will hinder the hole injection via the sidewall of V-pits, and then result in less quantum wells(QWs) participating in radioluminescence. The current-voltage characteristics show that the LEDs with earlier covering of V-pits have higher operating voltage at room temperature, and a more dramatic voltage rise with the reduction of temperature. Meanwhile, more manifested emission peaks for sidewall QWs and deeper QWs near to ntype layer was observed in the sample with earlier coveing of V-pits at cryogenic temperatures, for the reason that the holes being injected via V-pits sidewall have higher kinetic energy and could transport to deeper QWs.
The impact of the V-pits covering layer(VCL) position on the optoelectronic performance of InGaN-based green light-emitting diodes(LEDs) was investigated. It is found that earlier covering of V-pits will hinder the hole injection via the sidewall of V-pits, and then result in less quantum wells(QWs) participating in radioluminescence. The current-voltage characteristics show that the LEDs with earlier covering of V-pits have higher operating voltage at room temperature, and a more dramatic voltage rise with the reduction of temperature. Meanwhile, more manifested emission peaks for sidewall QWs and deeper QWs near to ntype layer was observed in the sample with earlier coveing of V-pits at cryogenic temperatures, for the reason that the holes being injected via V-pits sidewall have higher kinetic energy and could transport to deeper QWs.
引文
[1]Deng G, Zhang Y, Yu Y, et al. Significantly reduced in-plane tensile stress of GaN films grown on SiC substrates by using graded AlGaN buffer and SiNx interlayer. Superlattices Microstruct, 2018, 122, 74
[2]Yan L, Zhang Y, Han X, et al. Polarization-induced hole doping in N-polar III-nitride LED grown by metalorganic chemical vapor deposition. Appl Phys Lett, 2018, 112(18), 182104
[3]Deng G, Zhang Y, Yu Y, et al. Significantly improved surface morphology of N-polar GaN film grown on SiC substrate by the optimization of V/III ratio. Appl Phys Lett, 2018, 112(15), 151607
[4]Deng G, Zhang Y, Yu Y, et al. Study on the structural, optical, and electrical properties of the yellow light-emitting diode grown on free-standing(0001)GaN substrate. Superlattices Microstruct,2018, 116, 1
[5]Junlin L, Jianli Z, Guangxu W, et al. Status of GaN-based green light-emitting diodes. Chin Phys B, 2015, 24(6), 39
[6]Crawford M H. LEDs for solid-state lighting:performance challenges and recent advances. IEEE J Sel Top Quantum Electron,2009, 15(4), 1028
[7]Piprek J. Origin of InGaN/GaN light-emitting diode efficiency improvements using tunnel-junction-cascaded active regions. Appl Phys Lett, 2014, 104(5), 2217
[8]Hangleiter A, Hitzel F, Netzel C, et al. Suppression of nonradiative recombination by V-shaped pits in GaInN/GaN quantum wells produces a large increase in the light emission efficiency. Phys Rev Lett, 2005, 95(12), 127402
[9]Quan Z, Wang L, Zheng C, et al. Roles of V-shaped pits on the improvement of quantum efficiency in InGaN/GaN multiple quantum well light-emitting diodes. J Appl Phys, 2014, 116(18),A779
[10]Li Y, Yun F, Su X, et al. Deep hole injection assisted by large Vshape pits in InGaN/GaN multiple-quantum-wells blue light-emitting diodes. J Appl Phys, 2014, 116(12), 253512
[11]Zhou S, Liu X. Effect of V-pits embedded InGaN/GaN superlattices on optical and electrical properties of GaN-based green light-emitting diodes. Phys Status Solidi Appl Res, 2016, 214(5),1770125
[12]Takahashi H, Ito A, Tanaka T, et al. Effect of intentionally formed`V-defects'on the emission efficiency of GaInN single. Jpn Soc Appl Phys, 2000, 39, 569
[13]Ting S M, Ramer J C, Florescu D I, et al. Morphological evolution of InGaN/GaN quantum-well heterostructures grown by metalorganic chemical vapor deposition. J Appl Phys, 2003, 94(3), 1461
[14]Le L C, Zhao D G, Jiang D S, et al. Effect of V-defects on the performance deterioration of InGaN/GaN multiple-quantum-well light-emitting diodes with varying barrier layer thickness. J Appl Phys, 2013, 114(14), 143706
[15]Lv Q, Liu J, Mo C, et al. Realization of highly efficient InGaN green LEDs with sandwich-like multiple quantum well structure:role of enhanced interwell carrier transport. ACS Photonics, 2018, 6(1),130
[16]Wang G, Tao X, Liu J, et al. Temperature-dependent electroluminescence from InGaN/GaN green light-emitting diodes on silicon with different quantum-well structures. Semicond Sci Technol,2014, 30(1), 15018
[17]Wu X, Liu J, Quan Z, et al. Electroluminescence from the sidewall quantum wells in the V-shaped pits of InGaN light emitting diodes. Appl Phys Lett, 2014, 104(22), 1634
[18]Kim J, Tak Y, Kim J, et al. Analysis of forward tunneling current in InGaN/GaN multiple quantum well light-emitting diodes grown on Si(111)substrate. J Appl Phys, 2013, 114(1), 231107
[19]Kozodoy P, Xing H, Denbaars S P, et al. Heavy doping effects in Mg-doped GaN. J Appl Phys, 2000, 87(4), 1832
[20]Xiaoming W. Study on the luminescence properties of V-pits-containing GaN based blue LEDs on Si substrates. Nanchang University, 2014
[21]Schubert E F, Gessmann T. Light emitting diodes. Encylopedia of Condensed Matter Physics, 2005, 102
[2]Yan L, Zhang Y, Han X, et al. Polarization-induced hole doping in N-polar III-nitride LED grown by metalorganic chemical vapor deposition. Appl Phys Lett, 2018, 112(18), 182104
[3]Deng G, Zhang Y, Yu Y, et al. Significantly improved surface morphology of N-polar GaN film grown on SiC substrate by the optimization of V/III ratio. Appl Phys Lett, 2018, 112(15), 151607
[4]Deng G, Zhang Y, Yu Y, et al. Study on the structural, optical, and electrical properties of the yellow light-emitting diode grown on free-standing(0001)GaN substrate. Superlattices Microstruct,2018, 116, 1
[5]Junlin L, Jianli Z, Guangxu W, et al. Status of GaN-based green light-emitting diodes. Chin Phys B, 2015, 24(6), 39
[6]Crawford M H. LEDs for solid-state lighting:performance challenges and recent advances. IEEE J Sel Top Quantum Electron,2009, 15(4), 1028
[7]Piprek J. Origin of InGaN/GaN light-emitting diode efficiency improvements using tunnel-junction-cascaded active regions. Appl Phys Lett, 2014, 104(5), 2217
[8]Hangleiter A, Hitzel F, Netzel C, et al. Suppression of nonradiative recombination by V-shaped pits in GaInN/GaN quantum wells produces a large increase in the light emission efficiency. Phys Rev Lett, 2005, 95(12), 127402
[9]Quan Z, Wang L, Zheng C, et al. Roles of V-shaped pits on the improvement of quantum efficiency in InGaN/GaN multiple quantum well light-emitting diodes. J Appl Phys, 2014, 116(18),A779
[10]Li Y, Yun F, Su X, et al. Deep hole injection assisted by large Vshape pits in InGaN/GaN multiple-quantum-wells blue light-emitting diodes. J Appl Phys, 2014, 116(12), 253512
[11]Zhou S, Liu X. Effect of V-pits embedded InGaN/GaN superlattices on optical and electrical properties of GaN-based green light-emitting diodes. Phys Status Solidi Appl Res, 2016, 214(5),1770125
[12]Takahashi H, Ito A, Tanaka T, et al. Effect of intentionally formed`V-defects'on the emission efficiency of GaInN single. Jpn Soc Appl Phys, 2000, 39, 569
[13]Ting S M, Ramer J C, Florescu D I, et al. Morphological evolution of InGaN/GaN quantum-well heterostructures grown by metalorganic chemical vapor deposition. J Appl Phys, 2003, 94(3), 1461
[14]Le L C, Zhao D G, Jiang D S, et al. Effect of V-defects on the performance deterioration of InGaN/GaN multiple-quantum-well light-emitting diodes with varying barrier layer thickness. J Appl Phys, 2013, 114(14), 143706
[15]Lv Q, Liu J, Mo C, et al. Realization of highly efficient InGaN green LEDs with sandwich-like multiple quantum well structure:role of enhanced interwell carrier transport. ACS Photonics, 2018, 6(1),130
[16]Wang G, Tao X, Liu J, et al. Temperature-dependent electroluminescence from InGaN/GaN green light-emitting diodes on silicon with different quantum-well structures. Semicond Sci Technol,2014, 30(1), 15018
[17]Wu X, Liu J, Quan Z, et al. Electroluminescence from the sidewall quantum wells in the V-shaped pits of InGaN light emitting diodes. Appl Phys Lett, 2014, 104(22), 1634
[18]Kim J, Tak Y, Kim J, et al. Analysis of forward tunneling current in InGaN/GaN multiple quantum well light-emitting diodes grown on Si(111)substrate. J Appl Phys, 2013, 114(1), 231107
[19]Kozodoy P, Xing H, Denbaars S P, et al. Heavy doping effects in Mg-doped GaN. J Appl Phys, 2000, 87(4), 1832
[20]Xiaoming W. Study on the luminescence properties of V-pits-containing GaN based blue LEDs on Si substrates. Nanchang University, 2014
[21]Schubert E F, Gessmann T. Light emitting diodes. Encylopedia of Condensed Matter Physics, 2005, 102