球表面毛刺缺陷对球-板间隙操作冲击放电特性的影响
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摘要
对不同直径屏蔽球表面存在毛刺缺陷时的表面电场分布进行了仿真分析,并在特高压试验大厅开展操作冲击放电试验。结果表明:毛刺的存在会大幅提高球表面的最大场强,当毛刺长度为1~5 mm时,其最大场强较表面洁净状态提高了40.4%~379.2%,且相同长度毛刺对屏蔽球表面场强的影响程度随球直径增大而增大;在5 m球-板间隙下,毛刺对屏蔽球操作冲击放电特性影响较为明显,当毛刺长度为1~5 mm时,其操作冲击放电电压降低了19.1%~30.4%。
The surface electric field distributions of shielding spheres with different diameters were simulated when there are burr defects on their surface, and the switching impulse discharge tests were carried out in UHV test hall. The results show that the existence of burr can greatly increase the maximum electric field intensity on the shielding sphere surface, and when the burr length is 1~5 mm, the maximum electric field intensity increase by 40.4% ~379.2% compared with that of the shielding sphere with clean surface. When the burr length is the same, the influence degree of burr on the surface electric field intensity of shielding sphere increases with the increase of sphere diameter. Under the 5 m of sphere-plane gap, the effect of burr on the switching impulse discharge characteristics of shielding sphere is obvious,and the discharge voltage is reduced by 19.1%~30.4% when the burr length is 1~5 mm.
The surface electric field distributions of shielding spheres with different diameters were simulated when there are burr defects on their surface, and the switching impulse discharge tests were carried out in UHV test hall. The results show that the existence of burr can greatly increase the maximum electric field intensity on the shielding sphere surface, and when the burr length is 1~5 mm, the maximum electric field intensity increase by 40.4% ~379.2% compared with that of the shielding sphere with clean surface. When the burr length is the same, the influence degree of burr on the surface electric field intensity of shielding sphere increases with the increase of sphere diameter. Under the 5 m of sphere-plane gap, the effect of burr on the switching impulse discharge characteristics of shielding sphere is obvious,and the discharge voltage is reduced by 19.1%~30.4% when the burr length is 1~5 mm.
引文
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[18]CHENG J W,PENG Z R,WANG J L.Electric field calculation and optimization of the UHVDC converter valve shield case[C]//2012 IEEE 10th International Conference on Properties and Applications of Dielectric Materials.Bangalore,India:IEEE,2012:1-4.
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[2]王刚,张燕秉,常林晶,等.换流站阀厅屏蔽球结构研究[J].科学技术与工程,2015,15(4):229-233.
[3]阮江军,詹婷,杜志叶,等.±800k V特高压直流换流站阀厅金具表面电场计算[J].高电压技术,2013,39(12):2916-2923.
[4]姬大潜,刘泽洪,邓桃,等.特高压直流输电系统稳态运行时高端阀厅内部的电场分析[J].高电压技术,2013,39(12):3000-3008.
[5]杜志叶,朱琳,阮江军,等.基于瞬时电位加载法的±800k V特高压阀厅金具表面电场求解[J].高电压技术,2014,40(6):1809-1815.
[6]金硕,甘艳,阮江军,等.特高压直流输电系统阀厅金具表面电场精细求解[J].高电压技术,2015,41(4):1299-1305.
[7]王加龙,彭宗仁,刘鹏,等.±1100k V特高压换流站阀厅均压屏蔽金具表面电场分析[J].高电压技术,2015,41(11):3728-3736.
[8]贾伟,牛万宇,王帮田,等.±1100k V直流阀厅金具电场仿真设计[J].电气技术,2016,17(7):13-19.
[9]邱志斌,阮江军,黄道春,等.直流导线和阀厅金具的电晕起始电压预测[J].电工技术学报,2016,31(12):80-89.
[10]刘士利,魏晓光,曹均正,等.±1100 k V特高压直流换流阀冲击电压试验能力研究[J].中国电机工程学报,2013,33(28):161-167.
[11]魏晓光,宗文志,王高勇,等.±1100k V特高压直流换流阀外绝缘操作冲击放电试验及海拔校正研究[J].中国电机工程学报,2014,34(12):1996-2003.
[12]齐磊,王星星,李超,等.±1100 k V特高压直流换流阀绝缘型式试验下的电场仿真及优化[J].高电压技术,2015,41(4):1262-1271.
[13]王栋,阮江军,杜志叶,等.±660k V直流换流站阀厅内金具表面电场数值求解[J].高电压技术,2011,37(10):2594-2600.
[14]张竞言.特高压直流换流站高压阀厅金具表面电场分布计算[D].北京:华北电力大学,2016.
[15]胡蓉,金硕.±500k V换流站四重阀阀厅金具电场计算与分析[J].高压电器,2014(10):49-55.
[16]刘宗喜,蓝磊,陈胤,等.复合材料杆塔污秽条件下局部放电试验及电场仿真研究[J].绝缘材料,2017,50(1):61-67.
[17]刘泽洪,丁永福,王祖力,等.特高压阀厅金具表面电场计算及起晕校核[J].中国电力,2014,47(10):19-23.
[18]CHENG J W,PENG Z R,WANG J L.Electric field calculation and optimization of the UHVDC converter valve shield case[C]//2012 IEEE 10th International Conference on Properties and Applications of Dielectric Materials.Bangalore,India:IEEE,2012:1-4.
[19]杨艳,李钊年.高海拔地区750k V复合绝缘子均压环电场仿真及结构优化[J].绝缘材料,2015,48(1):70-73.