基于忆阻器的SIMON轮函数电路设计
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摘要
忆阻器由磁通量、电荷、电压、电流之间关系对称性推导得出,被认为是继电阻、电容、电感之后的第四大无源元件,具有记忆功能和非易失性等特点.通过对忆阻器工作原理和电路模型的研究,提出了基于忆阻器的SIMON轮函数电路设计方案.该方案首先分析忆阻器模型结构和SIMON算法,设计基于忆阻器的与、或、非门电路;并在此基础上实现基于忆阻器的SIMON轮函数电路,利用忆阻器的非易失性特性实现断点记忆功能;最后在CadenceVirtuoso环境下,仿真验证所设计电路的断电保存功能.与传统CMOS电路比较,基于忆阻器的SIMON轮函数电路减少了27.8%的元器件数量,低功耗特性明显.
As the fourth fundamental circuit element besides resistance, capacitance and inductance, the memristor is derived using the magnetic flux, charge, voltage, electric current symmetry. It contains the memory function and non-volatile. Based on investigating the operating principle and circuit model of memristor, in this paper a scheme of the SIMON round function circuit is presented utilizing the memristor. In the scheme the structure of memristor and SIMON algorithm are first analyzed, followed by designing the circuit of AND OR NOT logic gate based on the use of memristor. The SIMON round function circuit is designed to achieve the function of break-point memory by taking advantage of the non-volatile characteristic of memristor. Under the condition of TSMC 65 nm, the Cadence Virtuoso simulation result shows that the proposed circuit has the correct logic. Compared to the conventional CMOS circuit, the number of components decreases by about 27.8%, and is characterized with low-power consumption.
As the fourth fundamental circuit element besides resistance, capacitance and inductance, the memristor is derived using the magnetic flux, charge, voltage, electric current symmetry. It contains the memory function and non-volatile. Based on investigating the operating principle and circuit model of memristor, in this paper a scheme of the SIMON round function circuit is presented utilizing the memristor. In the scheme the structure of memristor and SIMON algorithm are first analyzed, followed by designing the circuit of AND OR NOT logic gate based on the use of memristor. The SIMON round function circuit is designed to achieve the function of break-point memory by taking advantage of the non-volatile characteristic of memristor. Under the condition of TSMC 65 nm, the Cadence Virtuoso simulation result shows that the proposed circuit has the correct logic. Compared to the conventional CMOS circuit, the number of components decreases by about 27.8%, and is characterized with low-power consumption.
引文
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[13]Beaulieu R,Shors D,Smith J,et al.The SIMON and SPECK families of lightweight block ciphers[C].2015Design Automation Conference,2015:175-180.
[2]贾旺旺.忆阻器件及其应用[D].成都:电子科技大学,2016.
[3]李心鹏.基于两层二氧化钛薄膜的新型元器件电路特性及其应用研究[D].银川:宁夏大学,2015.
[4]Strukov D B,Snider G S,Stewart D R,et al.The missing memristor found[J].Nature,2008,453:80-83.
[5]Ntinas V,Ascoli A,Tetzlaff R,et al.Transformation techniques applied to a TaO memristor model to enable stable device simulations[C].2017 IEEE European Conference on Circuit Theory and Design(ECCTD),2017:1-4.
[6]陶星辰.基于AES加密的无线音视频传输系统设计及应用[D].合肥:合肥工业大学,2015.
[7]张晓燕,徐允庆.基于正交拟群的流密码算法[J].宁波大学学报(理工版),2016,29(2):89-93.
[8]Dofe J,Reed C,Zhang N,et al.Fault-tolerant methods for a new lightweight cipher SIMON[C].IEEE 16th International Symposium on Quality Electronic Design(ISQED),2015:460-464.
[9]刘威,王光义.TiO2忆阻器的磁控模型分析及电路实现[J].杭州电子科技大学学报(自然科学版),2015,35(2):5-8.
[10]谭志平,杨红姣,刘奇能,等.最简荷控型忆阻器混沌电路的设计及实现[J].计算物理,2015,32(4):496-504.
[11]Olufemi A O,Massimo G.Arduino-controlled HPmemristor emulator for memristor circuit applications[J].Integration,the VLSI Journal,2017,58:438-445.
[12]朱平平,甘朝晖,蒋旻.忆阻器实现逻辑门的方法研究[J].微电子学与计算机,2012,29(12):12-16;21.
[13]Beaulieu R,Shors D,Smith J,et al.The SIMON and SPECK families of lightweight block ciphers[C].2015Design Automation Conference,2015:175-180.