摘要
在半导体材料的发展中,一般将Si,Ge称为第一代电子材料,GaAs,InP,GaP,InAs,AlAs等称为第二代电子材料,而将宽带隙高温半导体ZnO,SiC,GaN,AlN,金刚石等称为第三代半导体材料。随着科学技术的发展,对能在极端条件(如高温、高频、大功率、强辐射)下工作的电子器件的需求越来越迫切。常规半导体如Si,GaAs等已面临严峻挑战,故发展宽带隙半导体(E_g＞2.3 eV)材料已成为当务之急。
在本论文中,我们主要讨论了宽带隙半导体材料ZnO、SiC的制备及其光电性能的研究。
对于ZnO纳米材料,我们采用热蒸发法制备。
我们发展了制备ZnO纳米柱阵列的热蒸发法。实验不需要引入催化剂,也不需要预先沉积ZnO层,用廉价的硅衬底代替昂贵的蓝宝石衬底,在常压下得到了结晶质量好的样品。我们在较低生长温度(550℃)下,获得了结晶质量好的,高度定向的ZnO纳米柱阵列,而且,我们研究了物性和讨论了生长机制。
分别在550℃,600℃和650℃下。采用热蒸发法,合成了ZnO:Li纳米线,发现在600℃下合成的样品的紫外发光峰是550℃下合成的样品的十几倍,我们把这种现象归结于Li的掺杂引入了受主,受主浓度的增大让激子浓度变大。最后作出它的气敏器件。
在680℃时,采用不同源不同温度的方法,合成了ZnO:Al纳米线。发现它的紫外发光峰有蓝移现象,我们把这种现象归结于著名的B-M(Burstain-Moss)效应。
对于ZnO薄膜材料,我们采用了PLD(脉冲激光沉积)法制备。
采用Si衬底上制备ZnO薄膜的过程中,克服Si衬底与ZnO薄膜之间高达40%的晶格失配,减少由此产生的缺陷,在400℃下沉积得到较高质量的ZnO薄膜,在此基础上,研究ZnO/p-Si薄膜光电性能。
我们采用SiC做衬底,外延生长高质量的ZnO薄膜。
在400℃下沉积得到较高质量的ZnO:Ag薄膜,得到较稳定的p型特性。Ag掺入ZnO时,Ag占据Zn态,形成Ag_(Zn)受主。并讨论了Ag在ZnO中的存在的形态。
对于SiC薄膜材料,我们采用了PLD(脉冲激光沉积)法制备。
在C气氛下,于800-1200℃退火处理2小时。通过XRD,红外和XPS等一系列的测试手段表明,在1200℃退火,能很好抑制SiC的氧化和C的逃逸。得到很好结晶质量的SiC和较好的化学剂量比的。
In the development of semiconductors,Si and Ge is the first generation,GaAs,InP, GaP,InAs and AlAs is the second generation,while the third generation consists of ZnO, SiC,GaN,AlN and diamond etc.With the rapid advance of science and technology, common semiconductor such as Si and GaAs is not competitive for the applications in microelectronic and optoelectronic devices designed to operate in severe conditions(high temperature,high power,high frequency,etc).Therefore,the research and development of wide-band-gap semiconductor(Eg＞2.3 eV)is very important and urgent.
In this thesis,we mainly discussed the synthesis and properties of ZnO and SiC.
For ZnO nanorods by a simple thermal evaporation case,The main conclusion can be summarized as follows:
High-density well-aligned ZnO nanorod array was synthesized at 550℃without catalyst,Al_2O_3 substrate and the pre-deposited ZnO film by a simple thermal evaporation in normal pressure.In addition,Furthermore,the growth mechanism and physical properties were discussed.
Well-aligned ZnO:Li nanorod arrays with various Li concentrations were prepared on Silicon substrate by a simple vapor deposition at 550℃,600℃and 650℃, respectively.The gas sensing properties indicate that the structure of energy band of ZnO:Li is different from that of undoped ZnO.The strongest UV emission of ZnO:Li sample prepared at 600℃was over ten times stronger than that of the ZnO nanowire prepared at 550℃,which is considered to be due to Li doping.
Well-aligned AlZnO nanorod arrays with various Al concentrations and various diameters were prepared at 680℃on Silicon substrate by a simple vapor deposition with separate sources at different temperatures.Photoluminescence(PL)spectra reveal that a strong ultraviolet emission shifts to a higher energy due to Al incorporation.This is the well-known Burstain-Moss effect.
For ZnO thin film by PLDcase,The main conclusion can be summarized as follows:
Highly c-axis oriented and good crystallinity ZnO on Si substrate at 400℃. Furthermore,the physical properties of the ZnO/p-Si were discussed.
A better crystallinity ZnO at 6H-SiC were prepare.
ZnO:Ag films have been fabricated on a n-Si(111)substrate at 400℃.Furthermore, Ag dopants prefer to occupy the substitutional Zn sites,and an Ag substitution at a Zn site behaves as a deep accetor.
For SiC thin film by PLD case,The main conclusion can be summarized as follows:
These films were annealed isochronally at temperatures of 800℃-1200℃for 2 h under an C ambience.The XRD,IR and XPS show that the optimized annealed temperature is 1200℃.
引文
[1]R. E. Service. Science 1997, 276:895
[2]R. B. Heller, J. McGannon, A. H. Weber, J. Appl. Phys. 1950, 21: 1283
[3]Mollwo, Z. Angew. Phys. 1954, 6: 257
[4]Mead, Phys. Lett. 1965,18:218
[5]C. H. Bates, W. B. White, R. Roy, Science, 1962,137: 993
[6]L. Gerward, J. S. Olsen, J. Synchrotron Radiat. 1995,2: 233
[7]J. M. Recio, M. A. Blanco, V. Luana, R. Pandey, L. Gerward, J. Staun Olsen,Phys. Rev. B, 1998, 58: 8949
[8] A. Mang, K. Reimann, St. Rubenache, Solid State Communications, 1995, 94, 251
[9] Z. B. Fang, Y.Y. Wang, D.Y. Xu, Y.S. Tan, X. Q. Liu, Opt. Mater. 2004,26, 239
[10] N. O. Korsunska, L. V. Borkovska, B. M. Bulakh, L. Yu, Khomenkova, V. I. Kushnirenko, I. V. Markevich, J. Lumin. 2003, 733,102
[11] A. F. Kohan, G Ceder, D. Morgan, Chris G Van de Walle, Phys. Rev. B 2000, 61,15019
[12] B. X. Lin, Z. X. Fu, Y. B. Jia, Appl. Phys. Lett. 2001, 79, 943,
[13] Y. Segawa, A. Ohtomo, M. Kawasaki, H. Koinuma, Z. K. Tang, P. Yu, and G. K.L. Wong, Phys. Stat. sol. (b) 1997, 202, 69
[14] 汤子康,物理,2005,34,21
[15] Th. Gruber, C. Kirchner, A. Waag, Phys. Stat. Sol. (B) 229 (2002) 841
[16]Z. K. Tang, G K. L. Wong, P. Yu, M. Kawasaki, A. Ohtomo, H. Koinuma, Y. Segawa. Appl. Phys. Lett. 1998,72:3270
[17]D. M. Bagnall, Y. F. Chen, Z. Zhu, T. Yao, M. Y. Shen, T. Goto. Appl. Phys. Lett. 1998, 73:1038
[18]T. Makino, G Isoya, Y. Segawa, C. H. Chia, T. Yasuda, M. Kawasaki, A. Ohtomo, K. Tamura, H. Koinuma. J. Cryst. Growth. 2000, 214/215:289
[19]T. Minami, H. Nanto, S. Takata. Thin Solid Film, 1983, 109:379 .
[20]S. Takata, T. Minani, H. Nanto. Jpn. J. Appl. Phys. 1981, 20:1759
[21]C. X. Guo, Z. X. Fu, C. S. Shi. Chin. Phys. Lett. 1999, 16:146
[22]Z.X.Fu,C.X.Guo,B.X.Lin,G H.Liao.Chin.Phys.Lett.1998,15:457
[23]G.B.Zhang,C.S.Shi,Z.F.Han,J.Y.Shi,Z.X.Fu,M.Kirm,G.Zimmerer.Chin.Phys.Lett.2001,18:441
[24]P.Verardi,M.Dinescu,A.Andrei.Appl.Surf.Sci.1996 96:827
[25]H.Kordi Ardakani.Thin Solid Films 1996,287:280
[26]B.J.Jin,S.Im,S.Y.Lee.Thin Solid Film 2000,366:107
[27]N.Benramdane,W.A.Murad,R.H.Misho,M.Ziane,Z.Kebbab.Mater.Chem.Phys.1997,48:119
[28]J.L.van Heerden,R.Swanepoel.Thin Solid Films 1997,299:72
[29]E.P.Zironi,J.Canetas-Ortega,H.Gomez,A.Maldonado,R.Asomoza,J.Palacios-Gomez.Thin Solid Films 1997,293:117
[30]T.Y.Ma,S.H.Kim,H.Y.Moon,G.C.Park,Y.J.Kim,K.W.Kim.Jpn.J.Appl.Phys.1996,Part 1,35:6208
[31]赵文轸.材料导报 1996,6:12
[32]G.I.Tan,J.Wu,X.J.Wu.J.Mater.Sci.Technol.1997,13:302
[33]C.Lee,K.Lim,J.Song.Solar Ener.Mater.Solar Cells 1996,43:37
[34]张立德,纳米材料和纳米结构,科学出版社,2001
[35]R.Kubo,J.Phys.Soc.Jpn.,1962,21,975
[36]W.R Halperin,Rev.of Modern Phys.,1986,58,532
[37]张立德,科学,1993,45,13
[38]P.Ball,L.Garwin,Nature,1992,355,761
[39]苏品书,超微粒子材料技术,复汉出版社,1989
[40]L.D.Zhang,J.M.Mou,Phys.,1992,21,167
[41]D.L.Feldhein,C.D.Keating,Chem.Soc.Rev.,1998,27,1
[42]张永康,刘建本,易保华等.精细化工 2000,17:343
[43]石晓波,李春根,汪德先.合成化学2002,10:183
[44]晋传贵,朱伟长,方道来等.精细化工 1999,16:26
[45]张金辉,储刚.精细石油化工 1997,2:43
[46]刘建本,易保华,肖卓炳等.吉首大学学报2000,21:9
[47]刘超峰,胡行方,祖庸.无机材料学报1999,14:391
[48]G.Hohenberger,G.Tomamdl.J.Mater.Res.1992,7:546
[49]E.A.Meulenkamp.J.Phys.Chem.B 1998,102:5566
[50]M.Singhal,V.Chhabra,P.Kang,D.O.Shah.Mater.Res.Bull.1997,32:239
[51]余保龙,张桂兰,汤国庆等.物理化学学报1995,11:587
[52]徐甲强,潘庆谊,孙雨安等.无机化学学报1998,14:355
[53]S.Hingorani,V.Pillai,P.Kumar,M.S.Multani,D.O.Shah.Mater.Res.Bull.1993,28:1303
[54]崔若梅,张文礼,徐中理等.化学世界1999,12:630
[55]钱军民,李旭祥,黄海燕.化工新型材料2001,29:1
[56]D.R.Chen,X.L.Jiao,G.Cheng.Solid State Commun.2000,113:363
[57]C.K.Yun,S.B.Park.J.Mater.Sci.1996,31:2409
[58]Z.L.Wang.Mater.Today 2004,7:26
[59]Z.W.Pan,Z.R.Dai,Z.L.Wang.Science 2001,291:1947
[60]X.Duan,Y.Huang,Y.Cui,J.Wang,C.M.Lieber.Nature 2001,409:66
[61]M.Lorenz,E.M.Kaidashev,A.Rahm,Y.Nobis,J.Lenzner,G.Wagner,D.Spemann,H.Hochmuth,M.Grundmann.Appl.Phys.Lett.2005,86:143113
[62]S.W.Kim,S.Fujita,S.Fujita.Appl.Phys.Lett.2005,86:153119
[63]Q.Wan,K.Yu,T.H.Wang,C.L.Lin.Appl.Phys.Lett.2003,83:2253
[64]M.H.Huang,Y.Y.Wu,H.Feick,N.Tran,E.Weber,P.D.Yang.Adv.Mater.13:113
[65]X.H.Han,G.Z.Wang,Q.T.Wang,L.Cao,R.B.Liu,B.S.Zou,J.G.Hou.Appl.Phys.Lett.2005,86:223106
[66]A.Tsukazaki,A.Ohtomo,T.Onuma,M.Ohtani,T.Makino,M.Sumiya,K.Ohtani,S.F.Chichibu,S.Fuke,Y.Segawa,H.Ohno,H.Koinuma,M.Kawasaki,Nat.Mater.2005,4,42
[67 D.Basak,GAmin,B.Mallik,G K.Paul,S.K.Sen,Journal of Crystal Growth 2003,256,73
[68]M Joseph,H Tabata,H Saeki,et al.Physica B,2001 302:402148.
[69]M Futsuhara,K Yoshioka,O Takai.Thin Solid Films,1998,317:322.
[70]Y Sato,S Sato.Thin Solid Films,1996,281:445.
[71]Sandip Gangila,_,A.Nakamurab,Y.Ichikawa,et al.,Journal of Crystal Growth 2007,298:486
[72]Z.Z.Zhang,Z.R Wei,Y.M.Lu,et al.,Journal of Crystal Growth 2007,301:362
[73]Z.G.Yu,R Wu,H.Gong,Applied Physics Letters,2006,88:132114
[74]P.Wang,N.F.Chen,Z.G.Yin,Applied Physics Letters,2006,88:152102
[75]Z.L.Wang,J.H.Song.SCIENCE 2006,312:242
[76] R. C. Wang, C. P. Liu J. L. Huang Applied Physics Letters 2006,88:0231:
[1] Y. L. Yang, H. W. Yan, Z. P. Fu, et al. J. Phys. Chem. B, 2006,110: 846
[2] L. S.Wang, X. Z. Zhang, S. Q. Zhao, et al. Appl. Phys. Lett., 2005, 86: 024108.
[3] Y. S. Zhang, L. S. Wang, X. H. Liu, et al. J. Phys Chem. B, 2005, 109: 13091
[4] H. J.Fan, Scholz R, Zacharias M, et al, Appl. Phys. Lett., 2005, 86: 023113.
[5] Z. W. Pan, Z. R.Dai and Z. L.Wang, Science, 2001,912: 1947
[6] X. D.Wang, C. J. Summers, Z. L.Wang, Nano. Lett., 2004, 4: 423
[7] S. W.Kim, Fujita S. and Fujita S., Appl. Phys. Lett., 2005, 86:153119.
[8] J. Zhong, S. Muthukumar, Y. Chen, et al, Appl. Phys. Lett., 2003, 83: 3401
[9] L.Vayssieres, Adv. Mater., 2003,15: 464-466.
[10] Y. Li, G W Meng., L. D. Zhang, Appl. Phys. Lett., 2000, 76 :2011
[11] C. H.Liu, J. A. Zapien, Y.Yao, et al. Adv. Mater., 2003,15:838
[12] L. E. Greene, M. Law, J. Goldberger, et al. Angew. Chem., 2003, 42: 3031
[13] W. I. Park, D. H. Kim, S.-W. Jung, et al, Appl. Phys. Lett., 2002, 80: 4232
[14] Z. L. Wang, J. Phys.: Condens. Matter, 2004,16: R829
[15] R. S. Wagner and W. C. Ellis, Appl. Phys. Lett., 1964,4: 89
[16] P. Yang and C. M. Lieber, J. Mater. Res., 1997,12:2981.
[17] Y. Zhang, N. Wang, S. Gao, et al. Chem. Mater., 2002,14: 3564.
[18] Y. L.Yang, B. F.Yang, Z. P. Fu, et al. J. Phys.: Condens. Matter, 2004, 16:7277.
[19] D. Li, Y. H.Leung, A. B. Djurisic, et al.Appl. Phys. Lett., 2004, 85: 1601
[20] Hong Seong Kang, Jeong Seok Kang, et al. J. Appl. Phys, 2004, 95:1246
[21] Ozgur U, Alivov Ya I, Liu C, et al. J. Appl. Phys., 2005, 98:041301.
[22] N. Y.Garces, L.Wang, L. Bai, et al. Appl. Phys. Lett., 2002, 81: 622
[23] B. X.Lin, Fu Z X and Jia Y B, Appl. Phys. Lett., 2001, 79:943
[24] A. B. DjuriSic, Y. H. Leung, K. H. Tarn, Appl. Phys. Lett. 2006, 88:103107
[25] D. S. Jiang, H. Jung, and K. Ploog, J. Appl. Phys. 1988, 64: 1371
[26] Khan A. Alim, Vladimir A. Fonoberov, Manu Shamsa, J. Appl. Phys. 2005, 97:124313
[27] A.D. Pasquier, H.H. Chen, Y.C. Lu, Appl. Phys. Lett. 2006 89: 253513.
[28] K. Vanhausden, W.L. Warren, C.H. Seager, D.R. Tallant, J.A. Voigt, B.E. Gnade, J. Appl. Phys. 1996,79: 7983.
[29] L. Duan, B.X. Lin, W.Y. Zhang, S. Zhong, Z.X. Fu, Appl. Phys. Lett. 2006,88: 232110.
[30] S.L. Liu, S.M. Zhou, Y.Z. Wang, X. Zhang, X.M. Li, CT. Xia, Y. Hang, J. Xu, J. Cryst. Growth 2006,292:125.
[31] Y. Zhang, B. X. Lin, X. K. Sun, Z. X. Fu, Appl. Phys. Lett. 2005,86: 131910.
[32] H. S. Kang, B. D. Ahn, J. H. Kim, G H. Kim, S. H. Lim, H. W. Chang, S. Y. Lee, Appl. Phys. Lett. 2006,88:202108.
[33] M. Siemons, A. Leifert, U. Simon, Adv. Funct. Mater. 2007,17:2189.
[34] W. Shan,W.Walukiewicz, J.W. Ager III, K.M. Yu, Y Zhang, S.S. Mao, R. Kling, C. Kirchner, A. Waag, Appl. Phys. Lett. 2005,86:153117.
[35] M. Chen, Z.L. Pei, X. Wang, C. Sun, L.S. Wen, J. Vac. Sci. Technol., A, Vac. Surf. Films 2001,19:963.
[36] R.C. Wang, C.P. Liu, J.L. Huang, S.J. Chen, Appl. Phys. Lett. 2006,88: 023111
[37] H.W. Lee, S.P. Lau, Y.G. Wang, K.Y. Tse, H.H. Hng, B.K. Tay, J. Cryst. Growth 2004,268:596.
[1]T.Lei, T.D.Moustakas, R.J.Graham,et al.Jouraal of Applied Physics 1992,71:4933.
[2]H.Marchand ,N.Zhang,L.Zhao,et al .Mrs Internet Journal of Nitride Semiconductor Research 1999,4 :art.no.-2
[3] H .Matsunami, S.Nishino,H.Ono, Ieee Transactions on Electron Devices ED 1981,28 101:238.
[4]A.J,Steckl,J.P.Li,Ieee Transactions on Electron Devices 1992,39:64.
[5]A.Strittmatter,A.Krost,M.Strassburg,et al.Applied Physics Letters 1999,74:1242.
[6]Y.F.Chen,H.J.Ko,S.K.Hong,et al.Applied Physics Letters 2000,76:559561.
[7]T.Shiosaki,S.Ohnishi,A.Kawabata,J. Appl.Phys 1979,50:3113.
[8]H.J.Yang,B.J.Zhao,X.J.Fang,et al. Chemical Research In Chinese Universities 2005,21:137.
[9]M.Fujita,N.Kawamoto,M.Sasajima,Y.Horikoshi, Journal of Vacuum Science &TechnoIogy B 2004,22:1484.
[10]K.Koike,T.Komuro,K.Ogata,et al.,Physica E-Low-Dimensional Systems &Nanostructures 2004,21:679
[11]S.J.Chen,Y.C.Liu,J.GMa,et al.Journal of Crystal Growth 2003,254:86.
[12]M.Kumar,R.M.Mehra,A.Wakahara,et al.J. Appl. Phys. 2003,93: 3837.
[13]A.Tiwari,M.Park,C.Jin,et al.,JournaI of Materials Research 2002,17:2480.
[14]A.Nahhas,H.K.Kim,J.Blachere,Applied Physics Letters 2001,78:1511.
[15]Z.X.Fu,B.X.Lin,GH.Liao,et al. Journal of Crystal Growth 1998,193:316.
[16]H.G Spitzer,D.A.Kleinman,J.C.Frosch,Physical Review 1959,113:113.
[17] M Joseph, H Tabata, H Saeki, et al. Physica B, 2001 302 :402148.
[18] M Futsuhara, K. Yoshioka, O Takai. Thin Solid Films, 1998,317: 322.
[19] Y Sato, S Sato. Thin Solid Films, 1996, 281:445.
[20] Sandip Gangila,_, A. Nakamurab, Y. Ichikawa,et al., Journal of Crystal Growth 2007,298:486
[21] Z.Z. Zhang, Z.P. Wei, Y.M. Lu,et al., Journal of Crystal Growth 2007,301: 362
[22]GYu,P.Wu,H.Gong,Applied Physics Letters, 2006,88:132114
[23]P.Wang,N.F.Chen,Z.GYin, Applied Physics Letters, 2006,88:152102
[24] J. N. Zeng, J. K. Low, Z. M. Ren, et al. Appl. Surf. Sci, 2002,197:362.
[25] X. M Fan, J. S. Lian, Z. X. Guo, et al. Appl. Surf. Sci, 2005,239:176.
[26] F. K. Shan, B. C. Shin, S. W. Jang, et al.J. Eur. Ceram. Soc, 2004,24:1015.
[27] B. J. Jin, S. Im, S. Y. Lee. Thin Solid Films, 2000,366: 107.
[28] N Fujimura, T Nishihara, S Goto, et al.J. Cryst. Growth, 1993,130: 269.
[29]J D Ye,S L Gu,S M Zhu,et al.J.Vac.Sci.Technol.A,2003,21:979.
[30]J J Zhu,R Yao,Z X Fu,Journal of The Electrochemical Society,2006,153:656
[31]姜晓明,贾全杰,郑文莉,等,高能物理与核物理,2000,24:1185
[32]Dosch H.Phys Rev,B 1987,35:2137
[33]B,D.Ahn,H.S.Kang,J.H.Kim,G.H.Kim,H.W.Chang,S.Y.Lee,J.Appl.Phys.2006,100:093701.
[34]H.S.Kang,B.D.Ahn,J.H.Kim,G.H.Kim,S.H.Lim,H.W.Chang,S.Y.Lee,Appl.Phys.Lett.2006,88:202108.
[35]V.Vaithianathan,B.T.Lee,S.S.Kim,J.Appl.Phys.2005,98:043519.
[36]K.Vanheusden,C.H.Seager,W.L.Warren,D.R.Tallant,J.A.Voigt,Appl.Phys.Lett.1996,68:403.
[37]S.Moribe,T.Ikoma,K.Akiyama,Q.Zhang,F.Saito,S.T.Kubota,Chem.Phys.Lett.2000,436:373.
[38]K.Vanheusden,C.H.Seager,W.L.Warren,D.R.Tallant,J.A.Voigt,Appl.Phys.Lett.1996,68:403.
[39]S.Moribe,T.Ikoma,K.Akiyama,Q.Zhang,F.Saito,S.T.Kubota,Chem.Phys.Lett.2000,436:373.
[40]Y.Zhang,B.X.Lin,X.K.Sun,Z.X.Fu,Appl.Phys.Lett.2005,86:131910.
[41]P.Wang,N.F.Chen,Z.G.Yin,Appl.Phys.Lett.2006,88:152102.
[42]F.Zhuge,et al.,Appl.Phys.Lett.2005,87:092103.
[43]L.L.Chen,et al.,Appl.Phys.Lett.2005,87:252106.
[44]J.M.Bian,et al.,Appl.Phys.Lett.2004,84:541.
[45]H.B.Ye,et al.,Appl.Phys.Lett.2007,90:102115.
[46]S.K.Hazra,S.Basu,Solid State Communications 2005,133:245.
[47]万齐欣,熊志华,饶建平,戴江南,乐淑萍,王古平,江风益,半导体学报,2007,28:696
[1]J.B.Casady,and R.W.Johnson.Solid State Electronics,1996,39:1409
[2]H.Morkoc,S.Strite,G.B.Gao,and et al.J Appl Phys,1994,76:1363
[3]A.S.Bakin,S.I.Dorozhkin.The 1998 High Temperature Electronic Materials,Devices and Sensors Conference.San Diego,California USA,1998:2
[4]S Nishino,Y Hazuki,H Matsunami,et al.J Electrochem Soc,1980,127:2674;
[5]Y Sun,T Ayabe,Y Miyasato.Jpn J Appl Phys,1999,38:L714
[6]L Rimai,R Ager,E M Logothetis,et al.Appl Phys Lett,1991,59:2266
[7]T Zehnder,A Blatter,A Bachli.Thin Solid Films,1994,241:138;
[8]U Preckwinkel,J KN Linder,et al.Nucl Instrum Meth B,1996,120:125
[9]Y Kimoto,H Matsunami.J Appl Phys,1994,75:850
[10]D J Larkin,P G Neudeck,J A Powell,et al.Appl Phys Lett,1994,65:1659
[11]M Syvajarvi,R Yakimova,E M A Johansson,et al.Mater Sci Eng B,1999,61-62:147
[12]S.Kaneda,Y.Sakamoto,T.Mihara,T.Tanaka.J Crystal Growth.1988,81:536
[13]Q.Wahab,R.C.Glass,I.P.Ivanov,J.Birch,J.E.Sundgren,M.Willander.J Appl Phys.1993,74:1663
[14]R.E.Honig,J.R.Woolson.Appl Phys Lett.1963,2:138
[15]J.A.Lely.Ber Dtsch Keram Ges.1955,32:229
[16]Y.M.Tairov,V.E Tsvetkov.Journal of Crystal Growth.1978,43:209
[17]Y.M.Tairov,V.F.Tsvetkov.Journal of Crystal Growth.1981,52:146
[18]郝跃,彭军,杨银堂,碳化硅宽带隙半导体技术(2000年第一版)科学出版社
[1]R.E.Honig,J.R.Woolson.Appl Phys Lett.1963,2:138
[2]Y.X.Wang,J.Wen,Y.Q.Tang et al,Thin Solid Films 1999,338:93
[3]王玉霞,曹颖,何海平等,半导体学报2001,22:1277
[4]A.Avila,I.Montero,L.Galan et al,J.Appl.Phys.2001,89:212
[5]Y.S.Katharria,S.Kumar,et al,Journal of Non-Crystalline Solids 2007,353:4660
[6]Y.Wang,H.He,L.Wang,D.Liu,H.Tang,Appl.Surf.Sci.2002,193:204.
[7]S.Veprek,T.Kunstmann,D.Volm et al,J.Vac.Sci.Technol.A 1997,15:10
[8]R.W.Kee,K.M.geib,W.Wilmsen et al,J.Vac.Sci.Technol.1978,15:1520
[9]R.K.Singh,J.Narayan.Phys.Rev.B,41(1990)8843
[10]钟志成,李智华,张端明等。强激光与粒子束,13(2001)317
[11]D.M.Zhang,Z.H.Li,B.M.Yu et al.Science in China(Series A),44(2001)1485
[12]李智华,张端明,关丽等,华中科技大学学报,29(2001)103
[13]张端明,李智华,黄明涛等,物理学报,50(2001)914