摘要
本论文的资助来源为:国家“863”高技术研究发展计划项目“量子点光电子器件微观结构设计与性能预测研究”(批准号:2003AA311070)。
垂直腔面发射激光器(VCSEL)作为一种新型光源,相对传统的边发射激光器具有光束质量好、易于制作大规模集成阵列等很多优点。在光纤通信、光互联、光集成器件等领域具有广泛的应用前景。近年来对这种激光器的研究和应用有了很大进展。
本文建立了一个对垂直腔面发射激光器进行特性分析的准三维理论模型,它将垂直腔面发射激光器的主要特性(电学特性、光学特性和热场分布特性)直接耦合到一起。在充分研究VCSEL内各种物理过程相互作用的基础上,对温度特性、空间烧孔效应、横模竞争特性等进行了详细研究和分析。本论文的主要内容包括:
(1)研究了VCSEL的理论基础,从描述半导体激光器中载流子和光子相互作用的最基本的速率方程出发,全面考虑了载流子扩散、有源区漏电流、注入电流的不均匀性、以及温度变化等因素对VCSEL运行机制的影响,建立起VCSEL的仿真模型,详细论述了模型的建立和实现过程。
(2)对VCSEL的热场特性进行分析,通过VCSEL中热传导方程、电压和热源分布的分析,讨论VCSEL中注入电流对温度的影响和电流、温度及输出功率之间的关系。
(3)建立了VCSEL的准三维仿真模型,论述了模型建立的依据,并对模型的分析过程进行简单描述,通过对模型的分析,得到电极的形状、位置以及注入电流的强度对激光器横模竞争特性和输出光功率的影响。而且考虑了光波模式角向分布的不均匀性,讨论了注入电流的角向分布对激光器模式选择的影响。
This work was supported by the National "863" High Technology Project of China (No. 2003AA311070).
Vertical-Cavity Surface-Emitting Laser (VCSEL) as a new type of light resource, compare to traditional Edge-Emitting Lasers, it has many advantages, such as ultralow threshold, single longitudinal mode operation, narrow beam divergence, easy two-dimensional integration. The advantages enable the wide applications of VCSELs in various fields, such as optical fiber communication, optical interconnect and integrated optical component. Great improvements have been achieved in researches and applications of VCSEL in recent years.
In this dissertation, a quasi-three-dimension is built up. In this model, VCSEL's important characteristics (electricity characteristic, thermal characteristic and optical characteristic) are coupled directly. We take into account the interactions among the most important physical processes in the operation of VCSEL. Temperature varieties, modulation, modes competition of VCSELs are investigated.
(1) Based on the rate equations which govern the interaction of carriers and photons inside of a VCSEL, the theoretic foundation is studied. We take into account the influence of factors such as diffusion of carriers, leakage current of the active region of VCSELs, the non-uniformity of injection current, and change of temperature on the operation mechanism of VCSELs, and found the simulation model and describe the detailed process that we found and realize the model.
(2) The thermal characteristic of VCSEL is analyzed, and then discusses the effect of current on temperature and the relation in injection current, temperature and optical output.
(3) We build up a VCSEL simulation model, describe the process of analysis of the model. Using the model we analyze the influence of the shape and situation of electrical connect, and the intensity of injection current on the characteristic of transverse-mode completion, and further take into account the non-uniformity of optical mode in azimuthally direction to discuss the influence of azimuthally distribution of injection current on the mode selection of VCSELs.
引文
[1]Y.Hayashi,T.Mnkainara,N.Hatori et al.,Lasing characteristics of low threhold oxide confinement InGaAs-GaAlAs vertical-cavity surface-emitting lasers,IEEE Photon.Technol.Lett.,7(11)1995,1234-1236.
[2]K.Iga,F.Koyama,S.Kinoshita,Surface emitting semiconductor lasers.IEEE J.Quantum Electron.,24(9)1988,1845-1855.
[3]Y.Ohiso,K.Tateno,Y.Kohama et al.,Flip-chip banded 0.85-μm bottom-emitting vertical-cavity laser array on an AlGaAs substrate.IEEE Photon.Technol.Lett.,8(9)1996,1115-1117.
[4]W.W.Chow,K.D.Choquette,M.H.Crawford et al.,Design,fabrication,and performance of infrared and visible vertical-cavity surface-emitting lasers.IEEE J.Quantum.Electron.33(10)1997,1810-1824.
[5]K.Iga,Surface-emitting laser-its birth and generation of new optoelectronics field.IEEE J.Select Topics Quantum Electron.,6(6)2000,1201-1215.
[6]T.Baba,Y.Yogo,K.Suzuki,Near room temperature continuous wave lasing characteristics of GaInAsP/InP surface emitting laser,Electron.Lett.,29(10)1993.
[7]K.Uomi,Low threshold room temperature pulsed opesration of 1.5μm vertical-cavity surface-emitting lasers with an optimized multi-quantum well active layer,IEEE Photon.Technol.Lett.,6(3)1994.
[8]赵英杰,李轶华,李林等,VCSEL的研究进展及应用前景,长春理工大学学报,28(1)2005.
[9]伊贺健一,小山二三夫,郑军译,面发射激光器基础与应用,科学出版社,北京,2002.
[10]K.L.Lear,K.D.Choquette,R.P.Schneider,J r.and S.P.Kilcoyne,Model Analysis of A Small Surface Emitting Laser With A Selectively Oxidized Waveguide,Appl.Phys.Lett.,vol.66 1995.
[11]Y.Ohiso,C.Amano,Thin-film wafer fusion for buried-hetero structure InP-based lasers fabricated on a GaAs substrate,J.Appl.Phys.,vol.87 2000.
[12]L.J.Norton et al.Optobus i:A production parallel fiber optical interconnect.Proc.IEEE Electron.Components and Technol.Conf.,1997,204-209.
[13]S.Hu,J.Ko,and L.Coldren.High-performance densely packed vertical-cavity photonic integrated emitter arrays for direct-coupled wdm applications.IEEE Photon.Technol.Lett.,vol.5 1998,766-768.
[1]L.A.Coldren and S.W.Corzine,Chapter 2 in Diode Lasers and Photonic Intergrated Circuits,Wiley,New York,1995
[2]L A.Coldren and S.W.Corzine,Appendix 5 in Diode Lasers and Photonic Intergrated Circuits,Wiley,New York,1995
[3]R.H.Yan,Z.M.Chuang,S.W.Corzine,and L.A.Coldren,"Simultaneous Gain and Phase-Shift Enhancements in Periodic Gain Structures," J.Appl.Phys.,67,4387-4389,1990
[4]E.R.Hegblom,D.I.Babic,B.J.Thibeault,and L.A.Coldren,"Scattering Losses from Dielectric Apertures in Vertical Cavity Lasers," IEEE J. Selected Topics in Quantum Electron., 3, 379-389,1997
[5] P. Mena, J. Morikuni, S. Kang, et al., A comprehensive circuit-level model of vertical-cavity surface-emitting lasers, IEEE J. Lightwave TechnoL, 17 (12) 1999,2612-2632.
[6] J. Gustavsson, J. Vukusic, J. Bengtsson, et al., A comprehensive model for the modal dynamics of vertical-cavity surface-emitting lasers. IEEE J. Quantum Electron, 38 (2) 2003, 203-212.
[7] M. Streiff, A. Witzig, M. Pfeiffer, et al., A comprehensive VCSEL device simulator. IEEE J. Select Topics Quantum Electron, 9 (3) 2003,879-891.
[8] G. Hadley, K. Lear, M. Warren, et al., Comprehensive numerical modeling of vertical-cavity surface-emitting lasers, IEEE J. Quantum Electron, 32 (4) 1996,607-616.
[9] S. Javro, S. Kang, Transforming tucker's linearized laser rate equations to a form that has a single solution regime, IEEE J. Lightwave TechnoL, 13 (9) 1997,1899-1904.
[10] J. Scott, R. Geels, S. Corzine, et al., Modeling temperature effects and patial hole burning to optimize vertical-cavity surface-emitting lasers. IEEE J. Quantum Electron, 29 (5) 1993,1295-1308.
[11] L. A. Coldren and S. W. Corzine, Chapter 4 in Diode Lasers and Photonic Intergrated Circuits, Wiley, New York, 1995
[12] L. A. Coldren and S. W. Corzine, Chapter 3 in Diode Lasers and Photonic Intergrated Circuits, Wiley, New York, 1995
[13] L. A. Coleren, "Lasers and Modulator for OEICs," in Intergrated Optoelectronics,M. Dagenais, R. F. Leheny, and J. Crow, eds., Academic Press, New York, 1994
[14] D. I. Babic and S. W. Corzine, "Analytic Expressions for the Reflection Delay,Penetration Depth, and Absorptance of Quanter-Wave Dielectric Mirrors," IEEE J. Quantum Electron., 28, 514-524,1992
[15] S. W. Corzine, R. H. Yan, and L. A. Coldren, "A Tanh Substitution Technique for the Analysis of Abrupt and Graded Interface Multilayer Dielectric Stacks," IEEE J. Quantum Electron., 27, 2086-2090, 1991
[16] S. S. Kutateladze and V. M. Borishanski, A Concise Encyclopedia of Heat Transfer,Permagon,Oxford,1966
[24]D.B.Young,J.W.Scott,F.H.Peters,M.G.Peter,M.L.Majiwski,B.J.Thibeault,S.W.Corzine,and L.A.Coldren,"Enhanced Performance of Offset-Gain High-Barrier Vertical-Cavity Surface-Emitting Laser Arrays," IEEE J.Quantum Electron.,29,2013-2021,1993
[1]赵一广,张宇生,黄显玲.垂直腔面发射半导体激光器的电、热和光波导特性。半导体学报,1999,20(11):963-970
[2]Zhao Y-G,Mclnerney J G.Transverse-mode control of vertical-cavity surface-emitting lasers.IEEE J.Quantum Electron,1996,32(11):1950-1958
[3]陈国鹰.高功率量子阱激光器及其诸特性相互耦合影响的研究.[博士学位论文].1998
[4]陈国鹰,孙以财,马祖光.量子阱激光器中的热场分布对光输出特性的影响.河北工业大学学报,1999,28(1):42-46
[5]Zhao Y-G,Mclnerney J G,Morgan R A.Temperature dependence of transverse mode evolution in vertical cavity surface-emitting lasers.Optical Engineering,1994,33(12):3917-3919
[6]Nakwaski W,Kontkiewiez A M.Thermal resistance of light-emitting diodes.IEEE Transactions on Electron Devices,1985,ED-32(11):2282-2291
[7]Liu Shi'an,Lin Shiming,Kang Xuejun.Numerical analysis of steady current and temperature distributions and characteristics of transverse mode in VCSEL.Chinese Journal of Semiconductors,1999,20(11):1034-1039
[8]高洪海,林世鸣,廉学军.垂直腔面发射激光其热特性的实验研究.光子学报,1997,26(6):522-525
[9]Schneider H C,Fischer A J,Chow W W.Temperature dependence of laser threshold in an InGaAsN Vertical-cavity surface-emitting laser.Appl.Phys.Lett,2001,78(22):3391-3393
[10]Chen G.A comparative study on the thermal characteristics of vertical-cavity surface-emitting lasers.J.Appl.Phys.1995,77(9):4251-4258
[11]Liu G,Seurin J F,Chuang S L,D I Babic.Mode selectivity study of vertical-cavity surface-emitting GaAs injection lasers.Appl.Phys.Lett.1998,73(6):726-728
[12]Tell B,Brown-Goebeler K F,Leibenguth R E.Temperature dependence of GaAs-AlGaAs Vertical cavity surface emitting lasers.Appl.Phys.Lett,1992,60(6):683-685
[13]Tai K,Fischer R J,Seabury C W.Room-temperature continuous-wave vertical-cavity surface-emitting GaAs injection lasers.Appl.Phys.Lett,1989,55(24):2473-2475
[14]刘恩科,朱秉升,罗晋升.半导体物理学.北京:国防工业出版社,1994
[15]虞丽生.半导体异质结物理.北京:科学出版社,1990
[16]黄德修.半导体光电子学.成都:电子科技大学出版社,1994
[1]C.J.Chang-Hasnain,etc.,"Dynamic,polarization,and transverse mode characteristics of vertical cavity surface emitting lasers," IEEE J.Quantum Electron,vol.27,pp.1402-1409,June 1991
[2]A.Valle,etc.,"Spatial hole burning effects on the dynamics of vertical cavity surface-emitting laser diodes," IEEE J.Quantum Electron.,vol.31,pp.1423-1431,Aug.1995
[3]"Secondary pulsations driven by spatial hole burning in modulated vertical-cavity surface-emitting laser diodes," J.Opt.Soc.Amer.,pt.B,vol.12,no.9,pp.1741-1746,1995
[4]T.E.Sale,etc.,"Temperature effects in VCSEL's," Proc.SPIE,vol.3003,pp.100-110,1997
[5]G.Hasnain,etc.,"Performance of gain-guided surface emitting lasers with semiconductor distributed Bragg reflectors," IEEE J.Quantum Electron,vol.27,no.6,pp.1377-1385,1991
[6]W.Nakwaski etc.,"Self-consistent thermal-electrical modeling of proton-implanted top-surface-emitting semiconductor lasers," Proc.SPIE,vol.2146,pp.365-387,1994
[7]R.Michalzik etc.,"Comprehensive numerical modeling of vertical-cavity surface-emitting lasers," IEEE J.Quantum Electron,vol.29,pp.1963-1974,Apr.1993
[8]G.R.Hadley etc,"Comprehensive numerical modeling of vertical-cavity surface-emitting lasers," IEEE J.Quantum Electron,vol.32,pp.607-616,Apr.1996
[9]J.Piprek,etc,"Modeling thermal effects on the light vs.current characteristic of gain-guided vertical-cavity surface emitting lasers," IEEE Photon.Technol.Lett,vol.6,pp.139-142,Feb.1994
[10]N.Bewtra,etc,"Modeling of quantum-well lasers with electron-opto-thermal interaction," IEEE J.Select.Topics Quantum Electron,vol.1,no.2,pp.331-340,1995
[11]J.Piprek,etc,"Simulation and analysis of 1.55mm double-fused vertical-cavity lasers," J.Appl.Phys,vol.81,no.8,pp.3382-3390,1997
[12]W.Nakwaski,"Thermal aspects of efficient operation of vertical-cavity surface-emitting lasers," Optic.Quantum Electron,vol.28,pp.335-352,1996
[13]J.W.Scott,etc,"Modeling temperature effects and spatial hole burning to optimize vertical-cavity surface-emitting laser performance," IEEE J.Quantum Electron,vol.29,no.5,pp.1295-1308,1993
[14]K.Moriki,etc,"Single transverse mode condition of surface-emitting injection lasers," Electron.Commun.Janpan,Part a,vol.71,no.1,pp.81-90,1998
[15]S.A.Javro,etc,"Transforming Tucker's linearized laser rate equations to a form that has a single solution regime" IEEE J.Quantum Electron,vol.QE-19,pp,1179-1183,July 1983
[16]R.S.Tucker,etc.,"Circuit modeling of the effect of diffusion on damping in a narrow-stripe semiconductor laser," IEEE J.Quantum Electron,vol.QE-19,pp.1179-1183,July 1983
[17]R.Huang,etc,"A relationship for temperature dependence of threshold current for 1.3mm compressively strained-layer multiple-quantum-well lasers," IEEE Photon.Technol.Lett,vol.9,pp.892-894,July 1997
[18]J.W.Pan,etc,"Theoretical study of the temperature dependence of 1.3mm AlGaInAs-InP multiple quantum well lasers," IEEE J.Quantum Electron,vol.32,pp.2133-2138,Dec.1996
[19]G.C.Wilson,etc,"Spatial hole burning and self-focusing in vertical-cavity surface-emitting laser diodes," Appl.Phys.Lett,vol.64,no.5,pp.542-544,1994
[20]S.M.Sze,Physics of Semiconductor Devices,2~(nd).ed.New York:Wiley,1981
[21]P.V.Mena,etc,"Rate-equation-based laser models with a single solution regime," J.Lightwave Technol.,vol.15,pp.717-730,Apr.1997
[22]S.F.Yu,"Dynamic behavior of vertical-cavity surface-emitting lasers," IEEE J.Quantum Electron,vol.32,pp.1168-1179,July 1996
[23]C.H.Chong and J.Sarma,"Self-consistent calculation of two-dimensional diffusion equation for a model gain analysis of lasing modes in cylindrical VCSEL's," Proc.SPIE,vol.2146,pp.397-408,1994
[24]D.M.Byrne,etc.,"Two and three level optical PCM transmitter design for multigigabit systems using a relaxation oscillation technique," J.Lightwave Technol.,vol.LT-5,pp.1412-1425,Oct.1987
[25]赵一广,张宇生,黄显玲.垂直腔面发射半导体激光器的电、热河光波导特性.半导体学报,1999,20(11):963-970
[26]Zhao Y-G,Mclnerney J G.Transverse-mode control of vertical-cavity surface-emitting lasers.IEEE J.Quantum Electron.,1996,32(11):1950-1958
[27]赵红东,沈光地,张存善.半导体垂直腔面发射激光其的微腔效用.光学学报,2000,20(5):592-596
[28]Schneider H.C,Fischer A.J,Chow W.W.Temperature dependence of laser threshold in an InGaAsN vertical-cavity surface-emitting laser.Appl.Phys.Lett.,2001,78(22):3391-3393
[29]虞丽生.半导体异质结物理.北京:科学出版社,1990
[30]Chang-Hasnain C J,Harbison J P,Hasnain G.Dynamic,polarization,and transverse mode characteristics of vertical cavity surface emitting lasers.IEEE J.Quantum Electron.,1991,27(6):1402-1409
[31]Li Zhan-Ming,Dion M,McAlister S P,et al.Incorporation of strain into a two-dimensional model of quantum-well semiconductor lasers.IEEE J.Quantum Electron.,1993,29(2):346-354
[32]Zhang Jian-Ping,Petermann K.Beam propagation model for vertical-cavity surface-emitting lasers:threshold properties.J.Quantum Electron.,1994,30(7):1529-1536
[33]徐森禄,凌世得.光波导及其应用.浙江:浙江大学出版社,1990
[34]郭长志.半导体激光器模式理论.北京:人民邮电出版社,1989
[35]Gonthier F,Henault A,et al.Mode coupling in nonuniform fibers:comparison between coupled-mode theory and finite-difference beam-propagation method summations.J.Opt.Soc.Am.,1991,8(2)
[36]Morozov V.N,Neff J.A,Zhou Haijun.Analysis of vertical-cavity surface-emitting laser multimode behavior.IEEE J.Quantum Electron.,1997,33(6):980-988
[37]Kumar T.Self-consistent analysis of gain-guided triple stripe lasers.Solid-state Electronics,1987,30(1):21-31
[38]Huang Yong-Zhen,Influence of lateral propagation modes on laser output characteristics in selectively oxidized vertical-cavity surface-emitting Lasers with double oxide layers.J.Appl.,1999,86(7):3519-3524
[39]袁益让.三维热传导半导体的分数步长特征差分法.科学通报,1998,43(15):1608-1612