摘要
垂直腔面发射激光器(Vertical Cavity Surface Emitting Lasers,简称VCSEL)以其优异的性能有望成为信息时代的新光源。本论文设计和制作了980nm 垂直腔面发射激光器列阵,主要内容如下:
从多量子阱的速率方程出发得出了阈值电流的表达式;计算了注入电流与输出功率的关系;由垂直腔底发射激光器的电流传播模型得出了热源分布。分析了腔镜反射率、量子阱数等参数对阈值电流、输出光功率的影响,并根据理论计算对器件参数进行了优化设计。
对垂直腔面发射激光器的湿法腐蚀技术、选择氧化工艺、合金工艺等关键工艺进行了研究,得到了最佳工艺条件。
采用氧化物限制方法制作的垂直腔底发射激光器,有源区直径为500μm、600μm 的单管在室温下均获得了最高连续光输出功率1.95W,是目前国际上所实现的单管室温连续输出最高功率值。
研究了热阻、发射波长、光谱半高宽、光输出功率随有源区直径和注入电流的关系。
研究了直径200μm 的器件的近场和远场分布,结果表明底发射器件电流分布均匀,阈值时光强分布为高斯型,为基模输出。
研制出980nm 垂直腔面发射激光列阵,测试了输出功率和光谱,并与相同出光面积的单管器件进行了比较。
Vertical-cavity surface-emitting lasers have the potential to become the new light source in information age for their excellent performance.In this thesis,we give some results on the design and fabrication of 980nm VCSELs array,the main work is as follows:
Based on the rate equations for multi-quantum wells of vertical cavity surface emitting laser (VCSELs), the relation of threshold current and output power was simulated. Thermal distributing of device was also deduced from current transport model.
The effects of DBR reflectivity and well numbers on threshold current and output power of bottom-emitting VCSELs were analyzed to design an optimal device structure. We have explored technologies for the fabrication of VCSELs, such as wet etching,wet and selective oxidation and annealing.
By using wet etching and selective oxidation process,we fabricated 980nm high power VCSELs. The continuous-wave (CW) output power as high as 1.95W with active diameters up to 500μm and 600μm have been achieved, which, to our knowledge, is the highest value reported for a single device.
The dependence of thermal resistance, emitting wavelength, FWHM, and output power on active diameters and injection current was studied. The near-field and far-field pattern of light intensity of a 200μm diameter device exhibits a homogeneous current distribution and a single transverse mode operation. 980nm VCSEL array was fabricated and the comparison of output power and spectrum of array device with single device of same active area was analyzed.
引文
[1] 伊贺建一,小山二山夫.《面发射激光器的基础与应用》.北京.:科学出版社.2002.7.
[2] 江剑平.《半导体激光器》.北京.: 电子工业出版社.2000.
[3] F.Koyama,T.Mukaihara,Y.Hayashi,N.Ohnoki,N.Hatori,K.Iga. IEEE Photon. Tech.Lett.,1995,7-10.
[4] Dan Botez,Don R.Scifres.Diode Laser Arrays. Cambridge University Press,1994.
[5] H.soda , K.Iga , C.Kitahara and Y.suematsu.GaInAsP/InP surface emitting injection lasers.Jan.J.Appl.Phys.,1979,vol.18:2329-2330.
[6] K. Iga, F. Koyama, S. Kinoshita. Surface emitting semiconductor lasers. IEEE J.f Quantum Electronics, 1988, 24: 1845-1855.
[7] G.P.Agrawal,N.K.Dutta.Semiconductor Lasers.Van Nostrand Reinhold, 1994.
[8] D.G.Deppe,D.L.Huffaker,J.Shin and Q.Deng. Very-low-threshold index confined planar microcavity laser,IEEE Photon. Tech.Lett.,1995, vol.7(9):965-967.
[9] G.M.Yang, M.MacDougal and P.D.Dupkus. Ultralow threshold current vertical cavity surface emitting lasers obtained with selective oxidation.Electron.Lett. , 1995 ,Vol.31:886-888.
[10] R.S.Geels , L.A.Coldren.Sub-milliamp threshold vertical-cavity laser diodes. Appl.Phys.Lett.,1991,vol.57:1605-1607.
[11] T.Baba,Y.Yogo,K.Suzuki,F.Koyama and K.Iga.Sopontaneous emission factor of a continuous wave top-surface-emitting vertical-cavity DBR surface emitting lasers(Ⅱ).J. Quantum Electron., 1992, vol.27(5): 1310-1319.
[12] R.P.Schneider,Jr.,K.D.Choquette,J.A.Lott,K.L.Lear,J.J.Fiegel and K.J.Mally.Efficient room-temperature continuous-wave AlGaP/AlGaAs visible(670nm) vertical-cavity surface emitting laser diodes.Photon.Tech.Lett.,1994,vol.6(3):313-316.
[13] R. Michalzik, M. Grabherr, R. Jager et al. Progress in high power vcsels and arrays[C]. Taipei, Taiwan: SPIE, 1998, 3419: 187-195.
[14] Martin Grabherr, Ihab Kardosh. Improved output performance of high-power VCSELs[R]. Annual Report 2001, Optoelectronics department, University of Ulm, 2001.
[15] 伊贺健一. 电子通信学会论文志. J81-C-I,1998.
[16] M.Kajita, K.Kasahara, T.J.Kim, D.T.Neilson et al..Wavelength-division multiplexing free-space optical interconnect networks for massively parallel processing systems, Appl. Optics, 1998, vol.32(17): 3746-3755.
[17] F.Koyama, K.Goto and K.Iga.Tech. Digest of 3rd OECC,16D1-4,532,1998.
[18] R.L.Thornton. Proc. SPIE, 3003, 112(1997).
[19] H.Nakayama, T.Nakamaru, J.Sakurai et al., Digest of IEEE/LEOS, Summer topical meeting, 1998, WA2,5.
[20] 潘炜, 张晓霞, 罗斌等. 多量子阱VCSEL 阈值特性的分析. 激光杂志, 1999, vol. 20, pp.62-64.
[21] M. Grabherr, M. Miller, R. Jager, R. Michalzik, U. Martin, H. Unold, K.J. Ebeling. High-power VCSEL’s: single devices and densely packed 2-D-arrays. IEEE J. Select. Topics Quantum Electron, 1999, vol. 5, pp. 495-502.
[22] R. Bates, IEE Proc. Pt J(Optoelectronics), 1988, vol. 135, 233-241.
[23] W. Nakwaski, IEE Proc. Pt. J. (Optoelectronics),1990, vol. 137, 129-131.
[24] R.S.Geels, S.W.Corzine, J.W.Scott et al., IEEE Photon. Technol. Lett. ,1990, 2(4): 234~236.
[25] K.Tai, Y.H. Yang and Y.H. Wang et al., Appl. Phys. Lett.,1990,56(25):2496~2498.
[26] Y. G. Zhao, Y .S. Zhang and X. L. Huang. Chinese J. of semiconductors, 1999, vol.20 (11): 963-969.
[27] Craig Angelos,Steven Hinckley,Rainer Michalzik,Vincent Voignier. Simulation of current spreading in bottom-emitting vertical cavity surface emitting lasers for high power operation. SPIE, 2004, vol. 5277: 261-272.
[28] Y. G. Zhao,J. G. Mconerney. IEEE J. Of Quantum Electron.,1995,vol. 31(9),1668-.
[29] Wlodzimierz Nakwaski and Marek Osinski, IEEE J.Electron.,1991,27(6):1391.
[30] 唐晋发,政权. 《应用薄膜光学》[M].北京. :上海科学技术出版社.1984.
[31] F. Koyama, Y. Suematsu, S. Arai and T. E. Tawee. IEEE J. Quantum Electron. , 1983, vol.19:1042-.
[32] Arto Nurmikko,Jung Han.Blue and near-ultraviolet vertical-cavity surface -eemitting lasers.MRS Bulletin,2002,27(7):502-506.
[33] Maurizio Dabbicco, Vincenzo Spagnolo, Michele Ferrara, Gaetano Scamarcio. Experimental Determination of the temperature distribution in trench-confined oxide vertical-cavity surface-emitting lasers[J]. IEEE Journal of Quantum Electronics, 2003,39(6):701-707.
[34] Changling Yan, Yongqiang Ning, Li Qin, Yangfang Sun, et al. A high Power InGaAs/GaAsP vertical-cavity surface-emitting laser and its temperature characteristics[J]. Semiconductor Science and Technology, 2004,19:685-689.
[35] T. Wipiejewski, M. G. Peter, B. J. Thibeault, D. B. Young, L. A. Coldren. Size-dependent output power saturation of vertical-cavity surface-emitting laser diodes[J]. IEEE Photonics Technology Letters, 1996, 8(1):10-12.