摘要
氧化锌（ZnO）是一种重要的宽禁带半导体材料，它具有较高的激子束缚能（60meV），在紫外及可见光范围内存在多个由于激子或本征缺陷引起的发光峰。同时，ZnO具有优异的光学和电学特性，优良的抗辐射能力，高的热稳定性和化学稳定性，低廉的价格而且环保无毒，这些突出的优点使ZnO成为一种极有前途的短波长光电功能材料，并引起了研究者广泛的关注。本论文中，我们采用相对简单但精心优化的制备工艺，制备出能够应用在电致发光器件中的一维ZnO纳米棒。以ZnO纳米棒为发光层，构建了ITO/ZnO纳米棒/PVK/Al的电致发光器件，并对电致发光器件的发光机理进行了深入的探索。
首先，我们分别采用模板法和化学浴沉积法制备了ZnO纳米棒阵列。鉴于下一步在电致发光器件中的应用，重点研究了化学浴沉积法制备ZnO纳米棒阵列的条件及不同的生长条件对ZnO纳米棒结构及发光性能的影响，并提出了应用于电致发光器件的最佳制备工艺。研究结果表明：采用化学浴沉积法在透明的ITO导电玻璃上生长的ZnO纳米棒垂直于衬底、分布均匀，尺寸单一性好，具有六方纤锌矿结构，并且纳米棒的直径和长度均可由实验条件控制。比起传统的制备方法，该方法制备的纳米棒阵列具有操作简单、制备成本低、阵列的质量高等优点。
其次，我们构建了ITO/ZnO纳米棒/PVK/Al电致发光器件。为了更好的分析器件的发光机理，我们又分别构建了ITO/ZnO/Al和ITO/PVK/Al电致发光器件进行对比，并对其电致发光器件的I-V曲线以及EL谱做了深入的分析。
由于ITO与ZnO之间存在较大的空穴势垒，在一定程度上限制了器件的发光性能。本文首创性地构建了ITO/ZnO纳米棒/PVK/Al倒置结构的电致发光器件，有效提高了器件的发光强度，实现了不通过掺杂的、无p-n结结构的、发射白光的ZnO发光器件。这一器件的发射光谱中包括了来自ZnO的激子复合的紫外发光和较强的ZnO缺陷发光，它们在可见光区域的混合导致了白光的出现。
在电致发光谱测试中，无论是器件的正置结构还是倒置结构，我们都观察到了尖锐的发光峰的出现。从理论上推断出，尖锐峰的出现是器件在电场作用下产生的随机激光。每一个尖锐峰对应于一个自发辐射过程，许多自发辐射光子通过强烈的多重散射而获得大于损耗的增益，并由此产生随机激光。其中，ZnO纳米棒垂直于衬底的生长以及其高度的均匀性对器件产生激光来说是非常重要的。此现象的发现，使得ZnO纳米棒在光电子器件方面有了更广阔的应用前景。
Znic oxide (ZnO), an important semiconducting oxide with a wide-direct bandgap (3.37eV) and a large exciton-binding energy (60meV) at room temperature, isconsidered as a promising material for various photonic and electrical applicationsdue to its special physical and chemical properties. ZnO can emit ultraviolent orvisible lights in a wide range due to a number of intrinsic and extrinsic defects in it. Inthis dissertation, we firsly prepared ZnO nanorods by a simple but refined method,and then fabricated a ZnO EL device with the structure of ITO/ZnO nanorods/PVK/Al.Their EL mechanisms are also studied.
First, ZnO nanorod arrays have been prepared by templete method and chemicalbath deposition method, respectively. In view of the applications in eleltroluminescentdevice, we focused on the preparation conditions of ZnO nanorods by chemicaldeposition method. The as-grown ZnO nanorods have wurtzite structure, exhibiting apreferable orientation of [002] direction. Moreover, the effect of growth conditions onthe microstructure and optical properties of ZnO nanorods has been studied. Thismethod has drawn extensive interests because of the low growth temperature(＜100℃), low cost and good potential for scale-up with general substrates. Also thistechnique brings the possibility of creating patterned nanostructures for applicationsas optoelectronic devices.
Secondly, we fabricated ITO/ZnO nanorods/PVK/Al electroluminescencedevice. In order to realize the EL emitting of ZnO and to analyze the luminescencemechanism of the device, we also fabricated ITO/ZnO/Al and ITO/PVK/Alelectroluminescent devices for comparison, and measured the I-V curve and the ELspectra of the devices. There is a large hole barrier between ITO and ZnO, so that itlimits the luminescence of the device to some extent. In the thesis the invertedelectroluminescence device with a structure of ITO/ZnO nanorods/PVK/Al iscreatively fabricated, and the luminescence intensity of the device has beeneffectively enhanced. Both ultraviolet emission peak at379nm and the emission ofdefects at520nm,572nm and760nm were detected. So we proposed the possible wayto realize the white-coloured EL device without doping and without p-n junctionstructure.
Sharp peaks were observed both in the EL spectra of the set structure and inverted structure. According to the correlated theory, the sharp peaks, as the electricallypumped random lasing, were generated by the light-emitting devices. Every sharppeak corresponded to a spontaneous emission process. During multiple scatteringprocesses，the spontaneously emitted light will attain optical gain which is overoptical losses. As the optical gain surpasses the losses, random lasing consequentlyoccurs. It is indicated that the vertically aligned growth and uniform heights of ZnOnanorods are critical for the generation of random lasing from the EL devices basedon the ZnO nanorod arrays. The discovery of random lasing made ZnO nanorods havemore potential applications in optoelectronic devices.
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