摘要
鉴于CMOS具有十分重要的地位和SiC MOS器件的诱人前景，本文对6H-SiC PMOS器件的基本特性做了较为详细的研究，着重研究了界面态以及源漏寄生电阻对SiC PMOS器件特性的影响。
研究了SiC的晶体结构，分析了SiC中杂质的不完全离化现象以及SiC中空穴迁移率的拟和公式；用解一维poisson方程的方法分析了SiC PMOS空间电荷区的电特性；
本论文重点分析了界面态分布和源漏串联电阻对SiC PMOS器件特性的影响。提出了一个价带附近的界面态分布模型，用该模型较好地描述了SiC PMOS器件阈值电压随温度的变化关系、C-V特性曲线以及亚阈特性曲线；分析了源漏寄生电阻对SiC PMOS器件输出特性、转移特性以及有效迁移率的影响；
论文中用模拟软件Medici模拟了SiC PMOS器件的输出特性和漏击穿特性，分别模拟了室温下和300℃时SiC PMOS器件的输出特性，分析了栅电压、接触电阻、界面态以及其他因素对SiC PMOS击穿特性的影响。
以上研究，揭示了SiC PMOSFET中的问题，为进一步的研究奠定了基础。
Because of the great potential of SiC MOSFETs and circuits, in this paper, the characteristics of 6H-SiC PMOSFETs are studied systematically, emphasizing on the effects of interface state and S/D series resistance on SiC PMOSFETs
Firstly, the crystal structure of silicon carbide, the phenomena of incomplete ionization of the impurity and the fitting formula of hole mobility are presented. The characterization in space-charge region of SiC PMOS structure is analyzed by solving one dimension poisson equation.
Secondly, the effects of interface density distribution and S/D series resistance on the characterization of SiC PMOSFETs are studied. A model of the interface state density distribution near by valence band is presented, and the dependence of the threshold voltage on temperature, the C-V characteristics and the subthreshold characteristics are predicted exactly with this model; the effects of S/D series resistance on the output characteristics , transfer characteristics and effective mobility of SiC PMOSFETs are analyzed.
Thirdly, the output characteristics and the drain breakdown characteristics are modeled with the procedure Medici. The output characteristics in the room temperature and 300癈 are simulated, and the effects of gate voltage .contact resistance, interface state and other factors on SiC PMOS drain breakdown characteristics are analyzed.
The research in this paper has uncovered the problems in the SiC PMOSFETs, and provided the ground for the further research.
引文
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