表征薄层电阻的Mapping技术研究
详细信息    本馆镜像全文|  推荐本文 |  |   获取CNKI官网全文
摘要
本文介绍了常用的微区电阻测试方法,通过比较各种方法的优劣,选择四探针方法进行研究,分析了常规直线四探针法的基本原理、测准条件、电流量的选择、边缘和厚度的修正以及测量区域的选择。从常规直线四探针法入手,引进了改进的范德堡法,即斜置式四探针法,阐述了该方法优于常规直线四探针法的测量原理及测试条件,然后基于常规直线四探针法和改进的范德堡法,探讨了用于测量薄层电阻率的斜置式方形Rymaszewski四探针法的原理,用该方法测定了4吋圆形硅片的电阻率分布。
     从电阻率的统计分布出发,确定了电阻率的分割数和差值,并且选择合适的门槛值,利用模糊数学将电阻率数据归于不同的模糊集,同一模糊集对应相同的电阻率,这样使得电阻率能以一定间隔分布,然后应用MATLAB软件画出电阻率的图形,以构成Mapping图。选取的Mapping图表示方法有:径向图、径向对比图、彩图、灰度图和等值线图。比较各种薄层电阻分布图的表示方法,优选出最理想的表征薄层电阻的Mapping图,即灰度显示,对样品的测试结果进行表示。表征薄层电阻的Mapping图的研究目的在于使薄层电阻分布情况一目了然,提高对测试结果的分析效果。本课题拟以改进原有样机对处理结果的表示方法为目标,改进后的处理结果直观、具体。
This paper introduced common methods of micro-resistance test. We choose the four-probe method to study after comparing the merits of each method. The basic principle, measured quasi-conditions, current selection, edge and thickness of the amendment, the choice of measurement region of conventional linear four-probe method was analyzed. Started with the conventional linear four-probe method, the improved Vanderbilt law was introduced, which is also called oblique four-probe method. The measurement principle and test conditions were described, which is better than conventional linear four-probe method. Then the principle of Rymaszewski oblique style square four-probe method for sheet resistivity test was discussed, and the resistivity distribution of 4-inch silicon wafers was determined using this method.
     The division number and difference of the resistivity was identified and the appropriate threshold was selected from the statistical distribution of resistivity. The resistivity data were attributed to different fuzzy sets according to the fuzzy mathematics theory, the same fuzzy sets corresponding to same resistivity, so the resistance can make the intervals distribution, at last, mapping graph was formed by resistivity graphics drawn with MaTlab software. The express methods selected for mapping diagram are: radial diagram, radial comparison chart, color pictures, gray scale and contour map. Gray scale method, which is determined as the best characterization of sheet resistance for mapping graph by comparing the representation of different sheet resistance graph, was choosen to express the samples test results. The purpose of characterized sheet resistance mapping graph study is to make it clear of the sheet resistance distribution, and increase the analysis effect of test results. This research was intended to improve the representations of the results using original prototype, after the improvement, the representation of results is more intuitive and specific.
引文
[01]孙以材,潘国锋,杨茂峰,等.绘制硅单晶电阻率等值线的Mapping技术.半导体学报,2008,29(07):1281-1285
    [02]孟庆浩,孙新宇,孙以材,等.薄层电阻测试mapping技术.半导体学报,1997,18(09):701-705
    [03] P.A.Crossley et al., J.Electronic Materials, 1973, 2(4):465-483
    [04] D.S.Perloff et al., J.Electrochem. Soc, 1997, 124(4):582-590
    [05]王占国.半导体材料的过去、现在和将来.院士讲坛,2008:58-59
    [06]中国科学院半导体研究所理化分析中心研究室著.半导体的检测与分析.北京:科学出版社,1984.36-39
    [07]刘新福.结合图像分析的微区薄层电阻四探针测试技术研究:[博士论文].天津:河北工业大学,2003
    [08]任献普,刘新福,黄宇辉,等.基于EIT技术的微区薄层电阻测试系统研究.半导体技术,2009,34(10):949-952
    [09]章毓晋.图像理解与计算机视觉.北京:清华大学出版社,2000. 34-39
    [10]贾云得.机器视觉.北京:科学出版社,2000. 69-80
    [11] Seung hoon nahm, etc. Evaluation of fracture toughness of degraded Cr-Mo-Vsteel using electrical resistivity. Journal of materials science. 37(2002):3549-3553
    [12] Muhlbauer A.区熔硅单晶的电阻率形貌和生长小平面.上海科学技术情报研究所:国外硅材料质量进展,1977. 31-37
    [13]鲁尼安WR.半导体测量和仪器.上海:上海科学出版社,1980. 94
    [14]刘玉岭,檀柏梅,张楷亮.超大规模集成电路衬底材料性能及加工测试技术工程.北京:冶金工业出版社,2002. 270-271
    [15]孙以材.半导体测试技术.北京:冶金工业出版社,1984. 252-255
    [16]孙以材.半导体测试技术.北京:冶金工业出版社,1984. 7
    [17]鲁效明.半导体材料电阻率的测量及电阻率测试仪.计量技术,1989, (05):37-38
    [18]孙以材,刘新福,高振斌,等.微区薄层电阻四探针测试仪及其应用.固体电子学研究与进展,2002 ,(01):93-99
    [19]孙冰.微区电学测试探针技术.半导体杂志,1996, 6(02): 38-46
    [20]孙以材.半导体测试技术.北京:冶金工业出版社,1984. 9
    [21]吴晓虹,阂靖.扩展电阻探针在材料测试和器件工艺中的应用.上海计量测试,1999,(05): 37-38.
    [22]刘玉岭,檀柏梅,张楷亮.超大规模集成电路衬底材料性能及加工测试技术工程.北京:冶金工业出版社,2002. 272-273
    [23] Valdes .B.Resistivity measurements on germanium for transistors, Proc. Instr.Radio Engrs. 1954.42:420
    [24]孙以材,张林在.用改进的Van der Pauw法测定方形微区的方块电阻.物理学报,1994, 43 (4) :530-539
    [25] Sun Yicai, Shi Junsheng, Meng Qinghao. Measurement of sheet resistance of crossmicroareas using a modified Van der Pauw method. Semiconductor Sci. Tech. 1996,11:805-8113
    [26] Sun Yicai. Several microfigures suitable to the measurement of sheet resistance for them. Materials and Process Characterization for VLSI,国际会议文集,昆明,1994;11:124-126
    [27]孙以材,石俊生.在矩形样品中Rymaszewski公式的适用条件的分析.物理学报,1995,44 (12):1869-1878
    [28]孙以材.半导体测试技术.北京:冶金工业出版社,1984. 206-214
    [29]孙以材.半导体测试技术.北京:冶金工业出版社,1984. 200-206
    [30]杨丽卿.三探针法测量硅外延材料电阻率的局限性.半导体技术,1987,(03): 38-40
    [31]宿昌厚.双位组合四探针法测量硅片电阻率如何进行厚度修正.全国半导体集成电路与硅材料学术年会,杭州,1953. 518-519
    [32]孙以材,范兆书,孙新宇,等.电阻率两种测试方法间几何效应修正的相关性.半导体技术,2000,25(5): 38-41
    [33]石俊生,孙以材.四探针测试技术中边缘修正的有关方法.半导体杂志,1997,22(01): 35-42
    [34]孙以材,张林在.用改进的Van der Pauw法测定方形微区的方块电阻.物理学报,1994, 43 (4) :530-539
    [35]王正林,刘明.精通MATLAB7.北京:电子工业出版社,2006. 2-3
    [36] Gallery of Four-Point Probe Measurements.SOLECON LABS TECHNICAL NOTE
    [37] Wieder H H.李汉达译.半导体材料电磁参数的测量.北京:计量出版社,1986
    [38]周全德.薄层电阻标样及Mapping在IC制造中的应用研究.半导体情报,2000,37(4):38-40
    [39]孟庆浩,孙新宇,孙以材,等.薄层电阻测试Mapping技术.半导体学报,1997,18(9):701-705
    [40]周全德.IC离子注入工艺的薄层电阻等值图监控.微电子学,2000,30(06):410-414
    [41] Perloff D S, Gan J N, WahlF E.Dose accuracy and doping uniformity of Ion implantation equipment[J]. Solid State Technology,1981,(2)
    [42]赵彦桥,韩彦辉,杨燕萍,等.PL Mapping技术检查大直径SI-GaAs晶片中缺陷分布.现代仪器,2006,24-26
    [43]孙新宇,王鑫,孙以才,等,李福林.微处理器在微区薄层电阻测试Mapping技术中的应用.半导体技术,1998,23(02):18-23
    [44]张艳辉,孙以才,刘新福,等.斜置式方形探针测量单晶断面电阻率分布Mapping技术.半导体学报,2004,25(06):682-686
    [45]代淑芬.半导体硅材料的发展现状及趋势.无锡南洋学院学报,2008,7(03):30-37
    [46]杨德仁.半导体缺陷的研究进展.动态热点聚焦,2005. 30-31
    [47]秦涛,何秀坤,董彦辉,等.半绝缘半导体切片电阻率无接触测定方法研究.电子科技,2009,22(05):66-68
    [48]徐仁伯.动功能半导体材料测试仪的设计:[硕士论文] .湖南:湖南大学,2008
    [49]晏敏,徐仁伯,章兢,等.基于双电组合法半导体材料电阻率测试仪的研制.宇航计测技术,2008, 28(02):50-53
    [50]刘新福,孙以材,刘东升.四探针技术测量薄层电阻的原理及应用.半导体技术,2004,29(07):48-52
    [51] Van der pauw, A Method of measuring specific resistivity and hall effect of discs of arbitrary shape, J.Philips Researc Reports, 1958,13 (1):1~9
    [52]吴德馨,钱鹤,叶甜春,等.现代微电子技术[M].北京:化工工业出版社,2002. 193-201
    [53] PERLOFF D S, etal.[J].J Electrochem Soc, 1997,124(4):582-590