SiGeC/Si异质结快速软恢复功率二极管的研究
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摘要
论文将SiGeC/Si异质结技术用于功率二极管反向恢复特性的改进,首先研究分析了Si基应变材料的晶格结构,形成压应变和张应变的机理,尤其是C的引入导致SiGeC材料临界厚度增加及相关器件热稳定性增强的机理。详细分析了SiGeC/Si能带结构特点,依据ΔEC、ΔEv和ΔEg的关系,得出SiGeC/Si异质结能带结构属于“负反向势垒”的结论。推导出SiGeC/Si异质结二极管,在较低、较高正向偏压下的电流密度表达式,解释了SiGeC/Si异质结二极管电流输运机理。
     基于异质结电流传输机理,SiGeC/Si异质结功率二极管实现了低通态压降下高电流密度的传输,改善了二极管的反向恢复特性,同时具有较低的反向漏电流。与少子寿命控制技术相比,SiGeC/Si异质结能带工程更有效的协调了功率二极管中通态压降、反向漏电流和反向恢复时间三者之间的矛盾。对SiGeC合金中的Ge、C含量进行了优化分析,提出在SiGeC/Si异质结二极管中,对于一定的Ge含量存在C含量的临界值,使得二极管的器件特性最优,并解释了该临界值存在的理论依据。
     采用数值拟合的方法,给出了SiGeC材料的迁移率模型和能带结构模型。对比分析了SiGeC/Si和SiGe/Si两种异质结二极管的温度特性,详细分析了二极管中C的引入对器件温度特性的改进,并对其机理进行研究。结果表明:基于C对SiGe合金的应变补偿作用,SiGeC二极管的热稳定性明显提高。与同结构SiGe二极管相比,器件的反向漏电流明显下降,阈值电压漂移显著减小。400K时,SiGeC二极管仍具有快而软的反向恢复特性。
     将理想欧姆结构应用到SiGeC/Si异质结功率二极管中,重点研究了SiGeC/Si异质结理想欧姆接触二极管的击穿机理,提出理想欧姆接触二极管反向阻断特性控制模型,即VBR=min(Vpin'Vpnp)。导出了二极管在不同阻断机制下的反向阻断电压表达式。得到了两种阻断机制相互转化的条件,以及二极管在不同阻断机理控制下,阻断电压与各参数之间的关系。
     提出了一种新型的基区渐变掺杂理想欧姆接触SiGeC二极管。详细分析了基区渐变结构的引入对二极管反向阻断特性提高的理论依据。新结构二极管在大幅提高p-n-p寄生晶体管击穿电压的同时,不会显著降低原p-i-n二极管的击穿电压,在更大的基区浓度变化范围内,都具有较高的阻断电压,这为器件设计提供了更大的自由度。另外,新结构二极管借助于基区渐变掺杂引入的内建电场,使得二极管的反向恢复时间有所减小,同时又不会牺牲器件的正向通态特性,很好的实现了反向阻断特性、反向恢复特性和正向通态特性之间的折中。
     通过简单易行的工艺流程和实施方案,研制出两种不同横向结构尺寸的SiGeC/Si异质结器件结构,并进行测试。测试结果与仿真结果吻合较好。SiGeC/Si异质结器件的研制,一方面为SiGeC p-i-n功率二极管的制备奠定了工艺基础,另一方面验证了模拟所用模型的正确性,为今后SiGeC/Si异质结器件的设计与开发提供可靠的模拟仿真手段。
The SiGeC/Si heterojunction technique is applied to power diodes to improve their reverse recovery characteristics. The lattice structure of strained silicon-based material, the mechanism of compressive and tensile strain, the critical thickness increase of SiGeC material and thermal-stability enhancement of SiGeC related devices are studied in this dissertation. The band structure of SiGeC/Si heteroj unction is analyzed. Based on the proportion betweenΔEC andΔEV inΔEg, it can be concluded that the band structure of SiGeC/Si heteroj unction belongs to'negative-reverse barrier'. The current density expressions of SiGeC/Si diodes are derived under forward bias and their current-transport mechanisms are given.
     Based on the current transport mechanism of heteroj unction, SiGeC/Si diodes are easy to achieve a low on-state voltage drop under high current density, fast and soft reverse recovery characteristics as well as low reverse leakage current. Compared to lifetime control technology, the contradictions among on-state voltage, reverse leakage current and reverse recovery time are coordinated effectively by SiGeC/Si heteroj unction band-gap engineering. The Ge and C contents of SiGeC alloys are optimized and there is a critical value of C, for a certain Ge content, to achieve the best characteristics in SiGeC/Si diodes. The theory foundation of this critical value is also analyzed.
     The mobility models and band structure models of SiGeC are obtained by utilizing numeric fitting method. The temperature characteristics between SiGeC/Si and SiGe/Si diodes are analyzed and the enhancement mechanisms of temperature characteristics are studied by the addition of C into SiGe diodes. The results indicate that the thermal stability of SiGeC diodes is improved remarkably due to the addition of carbon into SiGe system. Compared to SiGe diodes, the reverse leakage current of SiGeC diodes is decreased remarkably and its threshold voltage shift is reduced greatly. Furthermore, the fast and soft reverse recovery characteristics are also obtained at 400K for SiGeC diodes.
     The ideal ohmic contact is applied to SiGeC/Si heterojunction power diodes. The breakdown mechanism of new diodes is studied. The control model of VBR=min(Vpin,Vpnp) is given for the reverse breakdown characteristics of ideal ohmic contact diodes. The expressions of reverse blocking voltage are derived for different breakdown control modes. The conversion condition of two breakdown voltage control modes is given and the relation between breakdown voltage and structure parameters is also presented.
     A novel structure of ideal ohmic contact SiGeC diodes with base gradual-changing doping is presented. The theory base of reverse breakdown characteristics enhancement is analyzed by the introducing of base gradual-changing doping. The reverse breakdown voltage of p-n-p parasitic transistor in the new diodes is increased substantially, while that of original p-i-n diode is almost not reduced. Therefore, the novel diodes have the merits of high breakdown voltage in a greater range of base doping concentration, which provides more freedom for device design. Besides, because of the inner electrical field of base gradual-changing doping, the reverse recovery time of novel diodes is reduced to some extent without sacrificing their forward characteristics. Based on those, the new diodes can achieve the trade-off among reverse breakdown characteristics and reverse recovery characteristics and forward conducting-state characteristics.
     Two kinds of SiGeC/Si heterojunction devices with different lateral dimension are fabricated using feasible process flows and implement schemes, and then the sample devices are tested. On the one hand, the consistency between test results and numerical results validates the correctness and of the models presented in this dissertation, which provides a reliable numerical method for the advanced design of SiGeC/Si heteroj unction devices. On the other hand, it provides the process base for the manufacture of SiGeC p-i-n power diodes.
引文
【1】Bruckner Thomas; Jakob Roland, New medium-voltage inverter design with very high power density, IEEE Annual Power Electronics Specialists Conference-Proceedings,2008, p 2962-2967
    【2】Y. Li, A. Q. Huang and F. C. Lee. Introducing the Emitter Turn-Off Thyristor (ETO). Conference Proceedings of IEEE Industry Applications Society Annual Meeting-IAS[C],1998, pp.860-864.
    【3】Mehta H. Applications of MOS controlled (MCT) and MOS turn-off (MTO) thyristor. IEEE Trans on Power Electronics [J],2000,5(2):292-298.
    【4】O'Neill Michael, Silicon carbide MOSFETS challenge IGBTs, Power Electronics Technology,2008, vol.34, no.9, p14-19
    【5】Arab M.; Lefebvre S.; Khatir Z.; Bontemps S.; Experimental investigations of trench field stop IGBT under repetitive short-circuits operations, IEEE Annual Power Electronics Specialists Conference-Proceedings,2008, p4355-4360
    【6】Du B.; Hudgins J.L.; Santi E.; Bryant A.T.; Palmer P.R.; Mantooth H.A. Transient thermal analysis of power devices based on Fourier-series thermal model, IEEE Annual Power Electronics Specialists Conference-Proceedings,2008, p3129-3135
    【7】Busatto G.; Abbate C.; Iannuzzo F.; Abbate B.; Fratelli L.; Cascone B.; Manzo, R. High voltage, high performance switch using series connected IGBTs, IEEE Annual Power Electronics Specialists Conference-Proceedings,2008, p1606-1611
    【8】Scheick, Leif; Edmonds, Larry; Selva, Luis; Chen, Yuan, Current leakage evolution in partially gate ruptured power MOSFETs, IEEE Transactions on Nuclear Science, 2008, vol.55, no.4, p 2366-2375
    【9】Manghisoni, Massimo, Gate current noise in ultrathin oxide MOSFETs and its impact on the performance of analog front-end circuits, IEEE Transactions on Nuclear Science, 2008. vol.55, no.4, p 2399-2407
    【10】Luu, Aurore; Miller, Florent; Poirot, Patrick; et al. SEB characterization of commercial power MOSFETs with backside laser and heavy ions of different ranges, IEEE Transactions on Nuclear Science, 2008, vol.55, no.4, p 2166-2173
    【11】K.Satoh, M.Yamamoto, K.Morishita, Y.Yamaguchi, H.Iwamoto. High Power Symmetrical GCT for Current Source Inverter[C]. Conference Proceedings of Power Electronics and Drive Systems, PEDS, Hong Kong.1999, pp877-882
    【12】Miyake M,; Ohashi A.; Yokomichi M.; et al. A consistently potential distribution oriented compact IGBT model, IEEE Annual Power Electronics. Specialists Conference-Proceedings,2008, p998-1003
    【13】Kinjo, T.; Takao, K.; Tanaka, Y.; Sung, K.; Ohashi, H. Quantitative study on operation frequency limitation of multi-level high voltage power converter equipped with Si-IEGT and SiC-PiN diode, IEEE Annual Power Electronics Specialists Conference-Proceedings,2008, p 2909-2913
    【14】Wu, Bi; He, Yuan-Hang; Zhang, Qing-Ming; Ma, Yue-Fen. Development of a high power programmable precise time-delay trigger/ignition system for MFCG, Journal of Beijing Institute of Technology,2008, vol.17, no.3, p 311-315
    【15】J.Vobecky. Lifetime Engineering in High-Power Devices. The Third International Euro-Conference on Advanced Semiconductor Devices, Slavakia.2000:21-28
    【16】Heller, Eric R. Simulation of life testing procedures for estimating long-term degradation and lifetime of AlGaN/GaN HEMTs, IEEE Transactions on Electron Devices,2008, vol.55, no.10, p 2554-2560
    【17】Testa A, De Caro S; Panarello S, et al. Stress analysis and lifetime estimation on power MOSFETs for automotive ABS systems, IEEE Annual Power Electronics Specialists Conference-Proceedings, 2008, p1169-1175
    【18】P.Hazdra, J.Vobecky, Axial Lifetime Control in Silicon Power Diodes by Irradiation with Protons, Alphas, Low-and High-Energy Electrons. Microelectronics Journal.2004,35:249-257
    【19】X.Yuan, F.Udrea Optimization of Local Lifetime Control in High Power Diode Power Conversation Conference,2002,PCC Osaka,2002:Vol.1,226-231
    【20】Vobecky.Optimization of Power Diode Characteristics by means of Ion Irradiation. IEEE Trans.On Electron Devices.1996,43(12):2283-2289
    【21】P.Hazdra, Effect of Defects Produced by MeV H and He Ion Implantation on Characteristics of Power Silicon P-i-N Diodes.Conference on Ion Implantation Technology.2000:135-138
    【22】P.Hazdra.Local Lifetime Control by Light Ion Irradiation:Impact on Blocking Capability of Power P-i-N Diode.Microelectronics Journal.2001,32(5-6):449-456
    【23】Lamhamdi, M.; Boudou, L.; Pons, P.; Guastavino, J.; et al. Si3N4 thin films proprerties for RF-MEMS reliability investigation, International Conference on Solid-State Sensors, Actuators and Microsystems,2007, p 579-582
    【24】Tizei, L.H.G.; Bettini, J.; Carvalho, M.M.G.; Ugarte, D. Heterostructure interface roughness characterization by chemical mapping: Application to InGaP/GaAs quantum wells, Journal of Applied Physics,2008, vol.104, no.7, p 074311
    【25】Chen, K.P.; Yoon, S.F.; Ng, T.K.; Tanoto, H.; et al. Characterization of GaAs grown on SiGe/Si graded substrates using p-n junction diodes. Journal of Applied Physics,2008, vol.104, no.7, p 073710
    【26】Schmerler, S.; Hahn, T.; Hahn, S.; Niklas, J.R.; Grundig-Wendrock, B. Explanation of positive and negative PICTS peaks in SI-GaAs, Journal of Materials Science:Materials in Electronics,2008, vol.19, no.1,p S328-S332
    【27】T.K.Liang,H.K.Tsang,I.E.Day,et al., Silicon waveguide two-photon absorption detector at 1.5 μmwavelength for autocorrelation measurements, Appl.Phys.Lett.,2002,81(7),1323-1325
    【28】K.Kikuchi, Highly sensitive interferometric autocorrelator using Si avalanche photodiode as two-photon absorber, Electronics Letters,1998,34(1),123-125
    【29】H.K.Tsang,C.S.Wong,T.K.Liang et al.,Optical dispersion,two-photon absorption and self-phase modulation in silicon waveguides at 1.5 μmwavelength, Appl.Phys.Lett.,2002,80(3),416-418
    【30】Fischer, Marc; Bisping, Dirk; Marquardt, B.; Forchel, A. High-temperature continuous-wave operation of GaInAsN-GaAs quantum-dot laser diodes beyond 1.3 μm, IEEE Photonics Technology Letters,2007, vol.19, no.14, p1030-1032
    【31】Zhu, Min; Yin, Junjian; Zhang, Haiying. A monolithic InGaP/GaAs HBT power amplifier design with improved gain flatness, Chinese Journal of Semiconductors,2008, vol.29, no.8, p 1441-1444
    【32】Boulais, K.A.; Rule, D.W.; Simmons, S.; Santiago, F.; Gehman, V.; Long, K.; Rayms-Keller, A. Tunable split-ring resonator for metamaterials using photocapacitance of semi-insulating GaAs, Applied Physics Letters,2008, vol.93, no.4, p043518
    【33】Elena D.Mishina, Nobuko Tanimura,Seiichiro Nakabayashi,et al.,Photomodulated second-harmonic generation at Silicon-Silicon Oxide interfaces:from modeling to application, J.Appl.Phys.,2003, 42(11),6731-6736
    【34】Vl.A.Margulis,E.A.Gaiduk,and E.N.Zhidkin, Electric-field-induced optical second harmonic generation and nonlinear optical rectification in semiconducting carbon nanotubes, Optics Communications,2000,183,317-325
    【35】Ramdani, R.M.; Gil, E.; Andre, Y.; Trassoudaine, A.; et al. Selective epitaxial growth of GaAs tips for local spin injector applications, Journal of Crystal Growth,2007, vol.306, no.l, p111-116
    【36】Y.Sugawara, D.Takayama, K.Asano, etc.12-19kV 4H-SiC PIN Diode with Low Power Loss. Conference Proceedings of ISPSD[C],2000
    【37】R.Singh, A.R.Hefener, D.Berning, J.W. Palmour. High Temperature Characteristics of 5kV,20A 4H-SiC PIN Rectifiers. Conference Proceedings of ISPSD[C],2001
    【38】Lee, S.G.; Fourcade, J.; Latta, R.; Solomon, A.A. Polymer impregnation and pyrolysis process development for improving thermal conductivity of SiCp/SiC-PIP matrix fabrication, Fusion Engineering and Design,2008, vol.83, no.5, p713-719
    【39】Henager Jr., C.H.; Shin, Y.; Blum, Y.; Giannuzzi, L.A.; Kempshall, B.W.; Schwarz, S.M. Coatings and joining for SiC and SiC-composites for nuclear energy systems, Journal of Nuclear Materials, 2007, vol.367-370B, no.1, p1139-1143
    【40】Wang, Liang; Zhao, Yongmei; Ning, Jin; Sun, Guosheng; et al. Laterally electrostatically driven poly 3C-SiC folded-beam resonant microstructures, Chinese Journal of Semiconductors,2008, vol.29, no.8, p1453-1456
    【41】Cha, Ho-Young; Soloviev, Stanislav; Dunne, Greg; et al. Comparison of 4H-SiC separate absorption and multiplication region avalanche photodiodes structures for UV detection. IEEE Conference on Sensors,2006, p14-17
    【42】Kodera, Yasuhiro; Toyofuku, Naoki; Yamasaki, Hiroyasu; Ohyanagi, Manshi; Munir, Zuhair A. Consolidation of SiC/BN composite through MA-SPS method, Journal of Materials Science,2008, vol.43, no.19,p6422-6428
    【43】Ranbir Singh, Sei-Hyung Ryu, D. Craig Capell etc. High Temperature SiC Trench Gate p-IGBTs. IEEE Transactions On Electron Devices[J],2003, Vol.50, No.3
    【44】J.B.Fedison, T.P.Chow, M.Ghezzo and J.W.Kretchmer, Dependence of turn-on and turn-off characteristics on anode/Gate geometry of High-Voltage 4H-SIC GTO Thyristors, Conference Proceeding of ISPSD[C],2001,175~178
    【45】Taguchi, T.; Igawa, N.; Miwa, S.; Wakai, E.; Jitsukawa, S.; Snead, L.L.; Hasegawa, A. Effect of displacement damage up to 50 dpa on microstructural development in SiC/SiC composites, Journal of Nuclear Materials,2007, vol.367-370A, no.1, p 698-702
    【46】C. W. Tipton, S. B. Bayne, T. E. Griffin, etc. Half-Bridge Inverter Using 4H-SiC Gate Turn-Off Thyristors. IEEE Electron Device Letters[J],2002,Vol.23, No.4
    【47】Y.Sugawara. Recent Progress in SiC Power Device Developments and Application Studies. Conference Proceeding of ISPSD[C],2003,10~18
    【48】Chen, Bin; Chen, Jun; Sekiguchi, Takashi; et al. Electron-beam-induced current study of electrical activity of dislocations in 4H-SiC homoeptaxial film, Journal of Materials Science:Materials in Electronics,2008, vol.19, no.1, p S219-S223
    【49】Lu.Jinggang, Rozgonyi.George, Seacrist.Mike, Chaumont Michelle and Campion Alan, Effect of strained-Si layer thickness on dislocation distribution and SiGe relaxation in strained-Si/SiGe heterostructures Journal of Applied Physics vol.104, no.7,2008, p.074904
    【50】A.Budyakov, K.Schmalz, N.N.Prokopenko, C.Scheytt, P.Ostrovskyy, Design of bipolar differential opAmps with unity gain bandwidth up to 23 GHz. The 4th European Conference on Circuits and Systems for Communications, ECCSC'08,2008, p 105-108
    【51】Min Byung-Wook, Rebeiz Gabriel M, Single-ended and differential Ka-B and BiCMOS phased array front-ends, IEEE Journal of Solid-State Circuits, vol43, no10,2008, p 2239-2250
    【52】J.D.Hwang, K.H.Hseih, Voltage-tunable dual-band infrared photodetectors with Si/SiGe metal-semiconductor-metal heterostructure, Microelectronic Engineering, vol.85, no.1 1,2008, p 2266-2268
    【53】Shimura Takayoshi, Kawamura Kohta, Asakawa Masahiro, Watanabe Heiji, Yasutake Kiyoshi, Ogura Atsushi, Fukuda Kazunori, Sakata Osami, Kimura Shigeru, Edo Hiroki, Iida Satoshi, Umeno Masataka, Characterization of strained Si wafers by X-ray diffraction techniques, Journal of Materials Science:Materials in Electronics, vol.19, no.1,2008, p S189-S193
    【54】K.M.Hung, T.H.Cheng, W.P. Huang, K.Y. Wang, H.H. Cheng, G. Sun, R.A. Soref, Electron tunneling in a strained n -type Si1-xGex/Si/Si1-xGex double-barrier structure, Applied Physics Letters, vol.93, no.12,2008, p 123509
    【55】C.W.Zhao, Y.M. Xing, J.Z. Yu, G.Q.Han, Nanoscale strain analysis of Si/Ge heterostructures,2nd IEEE International Nanoelectronics Conference, INEC 2008,2008, p 664-668
    【56】Li Xiaojian, Tan Yaohua, Tian Lilin, A compact model of channel electron mobility for nano scale strained-Si nMOSFET 2nd IEEE International Nanoelectronics Conference, INEC 2008,2008, p 504-508
    【57】R. Anisha, Jin Niu, Chung Sung-Yong, Yu Ronghua, P.R.Berger, P.E.Thompson, Strain engineered SiSiGe resonant interband tunneling diodes with outside barriers grown on Si0.8Ge0.2 virtual substrates, Applied Physics Letters, vol.93, no.10,2008, p102113
    【58】Li Ma, Yong Gao. Analysis and Optimal Design of a Novel SiGe/Si Power Diode for Fast and Soft Recovery. Chinese Physics Letters,2004, Vol.21(2):414-417.
    【59】Li Ma, Yong Gao. A Novel SiGe/Si Heterojunction Power Diode Utilizing an Ideal Ohmic Contact. The 4th International Workshop on Junction Technology (IWJT-2004), Shanghai, China.
    【60】Carvalho A, Coutinho J, Jones R, et al. First-principles study of Fe and FeAl defects in SiGe alloys PHYSICAL REVIEW B,2008 Vol.78 No.12
    【61】Bogoros A, Voronov S, Larkin S, et al. The influence of vibroacoustics on self-organizing of SiGe nanostructures onto silicon substrate JOURNAL OF VIBROENGINEERING 2008 Vol.10, no.3 p.383-387
    【62】Destefanis V, Hartmann JM, Hopstaken M, et al. Low-thermal surface preparation, HC1 etch and Si/SiGe selective epitaxy on (110) silicon surfaces. SEMICONDUCTOR SCIENCE AND TECHNOLOGY 2008 Vol.23 no.10.
    【63】Yang HB, Zhang XJ, Jiang ZM, et al. SiGe quantum dot molecules grown on patterned Si (001) substrates. JOURNAL OF APPLIED PHYSICS.2008, Vol.104, No.4
    【64】Becker M, Christiansen S, Albrecht M, et al. Energetic and kinetic aspects of the growth of pseudomorphic SiGe islands. JOURNAL OF CRYSTAL GROWTH.2008, Vol.310, no.14, p3261-3267
    【65】Satoh M, Arimoto K, Nakagawa K, et al. Acceptorlike behavior of defects in SiGe alloys grown by molecular beam epitaxy. JAPANESE JOURNAL OF APPLIED PHYSICS,2008, Vol.47, No.6, p4630-4633
    【66】Chang EY, Huang JC, Lin YC, et al. AlGaAs/InGaAs high electron mobility transistor grown on Si substrate with Ge/GexSil-x metamorphic buffer layers. JAPANESE JOURNAL OF APPLIED PHYSICS.2008,Vol.47, no.9 p.7069-7072
    【67】Liu F, Wong HS, Ang KW, et al. A new source/drain germanium-enrichment process comprising Ge deposition and laser-induced local melting and recrystallization for P-FET performance enhancement. Symposium on VLSI Technology, JUN 2008 Honolulu, SYMPOSIUM ON VLSI TECHNOLOGY p.21-22
    【68】Loh WY, Majhi P, Lee SH, et al. The effects of Ge composition and Si cap thickness on hot carrier reliability of Si/Si1-xGex/Si p-MOSFETs with high-K/metal gate. Conference Information: Symposium on VLSI Technology, Honolulu, SYMPOSIUM ON VLSI TECHNOLOGY,2008, p.45-46
    【69】Marzuki A, Sauli Z, Shakaff AYM. A voltage reference circuit for current source of RFIC blocks. MICROELECTRONICS INTERNATIONAL.2008, Vol.25, No.3, p26-32.
    【70】Moller M. Challenges in the cell-based design of very-high-speed SiGe-bipolar ICs at 100Gb/s. IEEE JOURNAL OF SOLID-STATE CIRCUITS 2008 Vol.43 No.9, p1877-1888
    【71】Koh KJ, Rebeiz GM. A Q-band four-element phased-array front-end receiver with integrated Wilkinson power combiners in 0.18-mu m SiGeBiCMOS technology. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES.2008 Vol.56, No.9, p2046-2053
    【72】Szymanski A, Kurjata-Pfitzner E. Amplitude comparator for self-calibration circuit of IR mixer. 15th International Conference on Mixed Design of Integrated Circuits and Systems, JUN 19-21,2008 Poznan, p.193-196
    【73】Shinjo S, Tsutsumi K, Onoma F, et al. High linearity SiGe-MMIC Q-MOD having self mixer current control circuit with output power detector for 0.4-5.8GHz cognitive radio transceiver. IEEE Radio Frequency Integrated Circuits Symposium (RFIC), JUN 15-17,2008 Atlanta, GA, p167-170
    【74】潘杰,杨海钢,杨银堂和朱樟明,一种12位125MS/s的SiGe BiCMOS采样保持放大器,电路与系统学报,2008, Vol.13, No.4,p55-58
    【75】张彩珍,刘肃,陈永刚,吴蓉,刘春娟,SiGe缓冲层对β-SiC(n)/c-Si (p)异质结特性的影响,兰州交通大学学报,2008, Vol.27, No.4,p141-144
    【76】Chen Rui, Lin Guijiang, Chen Songyan, Li Cheng, Lai Hongkai and Yu Jinzhong, Waveguide Simulation of a THz Si/SiGe Quantum Cascade Laser, JOURNAL OF SEMICONDUCTORS,2008, Vol.29, No.5, p893-897
    【77】Zhang Jian, Li Zhiqiang, Chen Liqiang, Chen Pufeng and Zhang Haiying, A High Purity Integer-N Frequency Synthesizer in 0.35μm SiGe BiCMOS, JOU RNAL OF SEMICONDUCTORS,2008, Vol.29, No.4, p655-659.
    【78】郭雪锋王志功李智群0.35μm SiGe BiCMOS工艺Colpitts振荡器分析与设,固体电子学研究与进展,2008,Vol.28,No.1,p129-132
    【79】Luo Rui, Zhang Wei, Fu Jun, Liu Daoguang and Yan Liren. Influence of Heterojunction Position on SiGe HBTs with Graded BC Junctions, JOU RNAL OF SEMICONDUCTORS,2008, Vol.29, No.8, p1491-1495
    【80】Xue Chunlai, Shi Wenhua, Yao Fei, Cheng Buwen, Wang Hongjie, Yu Jinzhong and Wang Qiming. A Multi-Finger Si1-xGex/Si Heterojunction Bipolar Transistor for Wireless Power Amplifier Applications, JOURNAL OF SEMICONDUCTORS,2007, Vol.28, No.4, p497-499
    【81】Hu Huiyong, Zhang Heming, Jia Xinzhang, Dai Xianying and Xuan Rongxi, Study on Si/SiGe Three-Dimensional CMOS Integrated Circuits,2007, Vol.28, No.4, p681-685
    【82】Raya Christian, Pourchon Franck, Zimmer Thomas, Celi Didier, Chevalier Pascal, Scalable approach for HBT's base resistance calculation, IEEE Transactions on Semiconductor Manufacturing, vol.21, no.2,2008, p 186-194
    【83】Knoll D, Heinemann B, Ehwald K E, et al.Comparison of SiGe and SiGe:C heterojunction bipolar transistors [J].Thin Solid Films,2000,369(1/2):342-346.
    【84】Biswas A, Basu P K. Calculation of figures of merit of Si/Si1-x-yGexCy/Si HBTs and their optimization [J].Solid-State Electronics,2001,45(11):1885-1889.
    【85】Biswas A, Basu P K. Estimated effect of germanium and carbon on the Early voltage of a Si1-x-yGexCy heterojunction bipolar transistor [J].Semiconductor Science and Technology, 2001,16(11):947-953.
    【86】Schubert Martin and Rana Farhan, High performance SiGeC/Si near-IR electrooptic modulators and photodetectors International Journal of High Speed Electronics and Systems, vol.17, no.1,2007, p 153-162
    【87】Martin F.Schubert and Rana Farhan, SiGeC/Si electrooptic modulators,. Journal of Lightwave Technology, vol.25, no.3,2007, p 866-874
    【88】E.Lopez, S.Chiussi, C.Serra, J.Serra, P.Gonzalez, B.Leon and M.Perez-Amor, ArF-excimer laser induced chemical vapour deposition of amorphous hydrogenated SiGeC films, Applied Surface Science, vol.208-209, no.1,2003, p 682-687
    【89】Hallstedt Julius, von Haartman M., Hellstrom P.-E., Ostling M., Radamsson H.H., Hole mobility in ultrathin body SOI pMOSFETs with SiGe or SiGeC channels, IEEE Electron Device Letters, vol.27, no.6,2006, p 466-468
    【90】Yang M, Sturm J.C. Doped vs undoped Si1-x-yGexCy layers in sub-100nm vertical p-channel MOSFETs, [J].Thin Solid Films,2000;369(1/2):366-370.
    【91】Chang C-L and J.C.Sturm Suppression of boron penetration by polycrystalline Si1-x-yGexCy in metal-oxide-semiconductor structures [J]. Appl Phys Lett,1999,74(17):2501-2503.
    【92】Quinones E J, John S, Ray S K, et al. Design, fabrication, and analysis of SiGeC heterojunction PMOSFETs [J].IEEE Trans Elec Dev,2000;47(9):1715-1725.
    【93】Lopez E, Chiussi S, Kosch U, et al. A growth rate, structure and surface morphology study of Si1-x-yGexCy films deposited by ArF-LCVD in tilted geometry. VACUUM,2008, Vol.82, No.12, p1525-1528
    【94】Lanzerotti L D, Ameur A S, Liu C. W et al, Si/Si1-x-yGexCy/Si heterojunction bipolar transistors. IEEE Electron Device Lett,1996,vol.17(7):334~339.
    【95】Katsuya Oda, Isao Suzumura, Makoto Miura. Suppression of B Outdiffusion by C Incorporation in Ultra-high-speed SiGeC HBTs, J. Appl. Phys.2003, Vol.42:2359~2364.
    【96】Huang J-Y, Ye Z-Z, Q i Z, et al. The growth of Si1-x-yGexCy alloys with high carbon content by ultra-high vacuum chemical vapor deposition. J Mater Sci Lett.2001, vol.20(12):1173-1175.
    [97]Chantre A.; Averrier G.; Boissonnet L.; Borot G.; Bouillon P.; Brossard F.; Chevalier P.; Deleglise F.; Dutartre D.; Duvernay J.; Fregonese S.; Judong F.; Pantel R.; Perrotin A.; Rauber B.; Rubaldo L.; Saguin F.; Schwartzmann T.; Vandelle B.; Zimmer T., Prospects for complementary SiGeC BiCMOS on thin-film SOI, ECS Transactions, vol.3, no.7, SiGe and Ge:Materials, Processing, and Devices, 2006, p 355-363
    [98]Duvernay J.; Brossard F.; Borot G.; Boissonnet L.; Vandelle B.; Rubaldo L.; Deleglise F.; Avenier G.; Chevalier P.; Rauber B.; Dutartre B.; Chantre A. Development of a self-aligned pnp HBT for a complementary thin-SOI SiGeC BiCMOS technology, IEEE Bipolar/BiCMOS Circuits and Technology Meeting,2007, p 34-37
    【99】邓咏桢,孔月婵,江宁等.CVD生长Si基Sil-x-yGexCy合金层应变的研究,固体电子学研究与进展,2005,Vol.25,No.4,p442-449.
    【100】王亚东,王龙成,叶志镇,黄靖云,三元合金锗硅碳的器件应用研究,2000,半导体情报年,Vol.37,No.6,p55-59.
    【101】蔡瑞仁,李垚,SiGe和SiGeC HBT速度过冲模型,微电子学,2007,Vol.137,No.3,p316-319
    [102]JIANG Ruolian, CHEN Weiming, LUO Zhiyun, et al. SiGeC/Si HETEROJUNCTION PHOTODETECTORX, JOURNAL OF NANJ IN G UNIVERSITY 2000, Vol.36, No.1, p116-118.
    【103】亓震,叶志镇,黄靖云等,掺碳锗硅合金的制备及其性能研究进展,半导体光电,1999,Vol.20,No.3.p154-158
    [104]Lin GJ, Lai HK, Li C, et al. Study of valence intersubband absorption in tensile strained Si/SiGe quantum wells. CHINESE PHYSICS B.2008, Vol.17, No.9, p3479-3483
    [105]Suthram S, Majhi P, Sun G, et al. High performance pMOSFETs using Si/Si1-xGex/Si quantum wells with high-k/metal gate stacks and additive uniaxial strain for 22 nm technology node. IEEE INTERNATIONAL ELECTRON DEVICES MEETING. 2007, Vol.1, No.2, p727-730
    [106]Mayuzumi S, Yamakawa S, Kosemura D, et al. Channel-stress study on gate-size effects for damascene-gate pMOSFETs with top-cut compressive stress liner and eSiGe. SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS,2008, p126-127.
    [107]Agaiby R, O'Neill AG, Olsen SH, et al. Insight into the aggravated lifetime reliability in advanced MOSFETs with strained-Si channels on SiGe strain-relaxed buffers due to self-heating. IEEE TRANSACTIONS ON ELECTRON DEVICES.2008, Vol.55, No.6, p1568-1573
    [108]Batwani H, Gaur M, Kumar MJ. Analytical surface potential based drain current model for nanoscale strained-Si/SiGe MOSFET, THE 2007 INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES.2007, p212-216.
    [109]Sakata K, Kato M, Kubo N, et al. Characterization of the surface layer on a strained Si wafer by electrochemical methods. JOURNAL OF PHYSICAL CHEMISTRY C.2008, Vol.112, No.10,
    p3785-3788.
    【110】Takagi S, Irisawa T, Tezuka T. et al. Carrier-transport-enhanced channel CMOS for improved power consumption and performance. IEEE TRANSACTIONS ON ELECTRON DEVICES.2008, Vol.55, No. 1,p21-39
    【111】Wong LH, Ferraris C, Wong CC, et al. Threading dislocation reduction by SiGeC domains in SiGe/SiGeC heterostructure:Role of pure edge dislocations. APPLIED PHYSICS LETTERS.2006, Vol.89, No.23, Article Number: 231906
    【112】Yang R, Xiong YZ, Loh WY, et al. Degradation of low frequency noise in SiGe- and SiGeC-surface channel p-type metal-oxide-semiconductor field effect transistor due to consuming the Si cap. APPLIED PHYSICS LETTERS.2007, Vol.91, No.23. Article Number: 233505.
    【113】Wong LH, Liu JP, Romanato F, et al. Strain relaxation mechanism in a reverse compositionally graded SiGe heterostructure. APPLIED PHYSICS LETTERS.2007, Vol.90, No.6, Article Number: 061913
    【114】Wang GHQ, Toh EH, Tung CH, et al. Strained silicon-germanium-on-insulator n-channel transistor with silicon source and drain regions for performance enhancement. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS.2007, Vol.46, No.4B, p2062-2066
    【115】Chang YM, Dai CL, Cheng TC, et al. Effect of annealing temperature for Sio.8Geo.2 epitaxial thin films. APPLIED SURFACE SCIENCE.2008, Vol.254, No.10, p3105-3109
    【116】徐世六,谢孟贤,张正璠SiGe微电子技术,国防工业出版社,2007,p41-45.
    【117】H. J. Osten, E. Bugiel and P. Zaumseil P. Growth of an inverse tetragonal distorted SiGe layer on Si (001) by adding small amounts of carbon.1994, Appl Phys Lett, vol.64:3440-3447.
    【118】Bugiel E, Lewerenz M, Osten HJ. Fabrication of well-defined individual dislocations in SiGe as a novel one-dimensional system. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES.2007, Vol.37. No.1-2, p250-253.
    【119】Khan AR, Stangl J, Bauer G, et al. Study of the relaxation of strain in patterned Si/SiGe structures using an x-ray diffraction technique. SEMICONDUCTOR SCIENCE AND TECHNOLOGY.2007, Vol.22, No.1,pS212-S215.
    【120】Sfina N, Nasrallah SAB, Lazzari JL, et al. Modeling of the Stark effect in strained Ge0.6Si0.4/Si/Ge0.6Si0.4 resonant tunneling diodes with graded GexSil-x (0.3< x< 0) spacer emitter and collector. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING.2006, Vol.9, No.4-5, p737-740.
    【121】Shin C, Jin HH, Chang JY, et al. Computation of the preferential nucleation sites for Ge quantum dots on a relaxed SiGe layer.2007, ACTA MATERIALIA. Vol.55, No.1, p225-231.
    【122】H.Jorg Osten. Band-gap changes and band offsets for ternary Si1-x-yGexCy alloys on Si(001).
    JOURNAL OF APPLIED PHYSICS.1998 Vol.84(5):2716~2721.
    【123】Loup V, Hartmann J M, Rollend G, et al. Growth temperature dependence of substitutional carbon incorporation in SiGeC/Si heterostructures. J. Vac, Sci. Technol. B.2003, vol.21(1):246~251.
    【124】Bakalski W, Zannoth M, Asam M, et al. A load-insensitive quad-band GSM/EDGE SiGeC-Bipolar power amplifier with a highly efficient low power mode. IEEE RADIO AND WIRELESS SYMPOSIUM,2008, Vol.1, No.2, p203-206.
    【125】Mukhopadhyay B, Ghosh S, Basu PK. Estimation of the composition of Si1-x-yGexCy layers on Si for photodetection at 1.3 and 1.55 mu m. OPTICAL ENGINEERING.2007, Vol.46, No.1, Article Number:014001.
    【126】Soref Richard. Optical band gap of the ternary semiconductor Si1-x-yGexCy. J.Appl. Phys.1991, vol.70, p2470~2475
    【127】R. Powell, K. Eberl, Theoretical investigation of random Si-C alloys. J. Cryst Growth.1993, vol.127, p425~431.
    【128】C.L.Chang, A.St.Amour, and J.C.Sturm. Effect of Carbon on the Valence Band Offset of Si1-x-yGexCy/Si Heterojunctions.1996, IEEE
    【129】高勇,刘静,马丽.Si1-x-yGexCy合金材料物理特性研究进展.微电子学.2005,vol.35(5):527~530.
    【130】M. S. Carroll and C. A. King. The effect of carbon on the valence band offset of compressively strained Si1-x-yGexCy/Si(100) heterojunctions. Journal of Applied Physics.2003, vol.93:1656-1661.
    【131】Mukhopadhyay B, Ghosh S, Basu PK. Estimation of external quantum efficiency of Ge rich Sil-x-yGexCy on si photodetectors at 1.3 mu m. PROCEEDINGS OF THE 2007 INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES.2007, p285-288
    【132】Sylvie Galdin, Philippe Dollfus, Valerie Aubry-Fortuna, et al. Band offset predictions for strained group Ⅳ alloys:Si1-x-yGexCy on Si(001) and Si1-xGex on Si1-zGez(001). Semicond. Sci. Technol.2000, Vol.15:565-572.
    【133】Weber O, Trisawa T, Numata T, et al. Examination of additive mobility enhancements for uniaxial stress combined with biaxially strained Si, biaxially strained SiGe and Ge channel MOSFETs. IEEE INTERNATIONAL ELECTRON DEVICES MEETING,2007, Vol.1, No.2, p719-722
    【134】陈治明,王建农.半导体器件的材料物理学基础.科学出版社,2003:52~80.
    【135】Tezuka T, Toyoda E, Nakaharai S, et al. Observation of mobility enhancement in strained Si and SiGe tri-gate MOSFETs with multi-nanowire channels trimmed by hydrogen thermal etching. IEEE INTERNATIONAL ELECTRON DEVICES MEETING,2007, Vol.1, No.2, p887-890
    【136】Osten H J, Gaworzewski P. Charge transport in strained Si1-yCy and Si1-x-yGexCy alloys on Si(001). J.Appl. Phys.1997, Vol.82(10):4977~4981.
    【137】Osten H J, Knoll D, Heinemann B, et al. Carbon Doped SiGe Heterojunction Bipolar Transistors for High Frequency Application. IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), Minneapolis USA,1999:109~116.
    【138】Yang HG. Wang D, Nakashima H, et al. Influence of top surface passivation on bottom-channel hole mobility of ultrathin SiGe- and Ge-on-insulator. APPLIED PHYSICS LETTERS.2008, Vol.93, No.7, Article Number: 072104.
    【139】Chung SS. Reliability issues for high performance nanoscale CMOS technologies with channel mobility enhancing schemes. INTERNATIONAL WORKSHOP ON NANO CMOS, PROCEEDINGS 2006, p128-131
    【140】Lianfeng Yang, Jeremy R Watling and Richard C W Wilkins, et al. Si/SiGe heterostructure parameters for device simulations. Semiconductor Sciences and Technology.2004, Vol.19:1174~ 1182.
    【141】Oertel S, Hubner J, Oestreich M. High temperature electron spin relaxation in bulk GaAs. APPLIED PHYSICS LETTERS.2008, Vol.93, No.13, Article Number:132112
    【142】Matutionvic-Krstelj Z, Venkataraman V, Prinz E J. Base Resistance and Effective Bandgap Reduction in npn Si/SiGe/Si HBTs With Heavily Base Doping. IEEE Trans E D.1996, vol.43(3): 457-461.
    【143】Basyurt PB, Tarim N. An X-band SiGe low-noise amplifier with high gain and low noise figure. INTERNATIONAL SYMPOSIUM ON COMMUNICATIONS, CONTROL AND SIGNAL PROCESSING,2008, Vol.1-3, p1103-1106
    【144】Wang CC, Chang-Liao KS, Lu CY, et al. Enhanced band-to-band tunneling-induced-hot-electron injection in p-channel flash by SiGe channel and HfO2 tunnel dielectric. SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES.2007, p357-360
    【145】Ashburn P, Boussetta H, Hashim M D R. Electrical Determination of Bandgap narrowing in Biploar Transistors with Epitaxial Si, Epitaxial SiGe, and Ion Implanted Base. IEEE Trans E D.1996, 43(5):774~779.
    【146】Klaassen D B M, Slotboom J W, Degraaff H C, Unified. Apparent Bandgap Narrowing in n- and p- type Si. Solid State Electronics.1992, vol.35 (2):125~129.
    【147】Jan Vobecky and Pavel Hazdra. High-Power P-i-N Diode With the Local Lifetime Control Based on the Proximity Gettering of Platinum. IEEE Electron Device Letters.2002,23(7):392-394
    【148】谢书珊;胡冬青;亢宝位,高压功率快恢复二极管的寿命控制研究,固体电子学研究与进展,2008,Vol.28(1):20-23
    【149】Traub, M. Bock, M.; Hoffmann, H.-D.; Bartram, M. Novel high peak current pulsed diode laser sources for direct material processing. High-Power Diode Laser Technology and Applications V, 2007, p 64560J
    【150】Anon. Proceedings of SPIE-The International Society for Optical Engineering, v 6876, High-Power Diode Laser Technology and Applications Ⅵ,2008,487p
    【151】Galigekere, Veda Prakash, Kazimierczuk, Marian K. Effect of SiC Schottky and Si junction diode reverse recovery on boost converter. 2007 Electrical Insulation Conference and Electrical Manufacturing Expo, EEIC 2007, p 294-298
    【152】Ikunori, Takata, A Trial Simulation on the Cosmic Ray Iuduced Failure of the Long n- Length pin Diodes, Pwoceeding of the 20th International Symposium on Power Semiconductor Devices & IC's, Oralamdo, May 18-22,2008, p44-47.
    【153】Elwarraki, E. Sabir, A. Pspice behavior and thermal modeling of the PIN diode:A circuit approach, 14th IEEE International Conference on Electronics, Circuits and Systems,2007, p 1031-1034
    【154】Hu, Chunsheng. Qin, Shiqiao; Wang, Xingshu. An extremely fast and high-power laser diode driver module. Proceedings of SPIE-The International Society for Optical Engineering, v5628, Semiconductor Lasers and Applications Ⅱ,2005, p 12-17
    【155】Leuzinger, Andrew. Highly reliable diode ensembles for direct diode applications and pumping solid-state lasers.24th International Congress on Applications of Lasers and Electro-Optics, ICALEO 2005-Congress Proceedings,2005, p 422-427
    【156】Hazdra P. Optimum lifetime structuring in silicon power diodes by means of various irradiation tech-niques [J].Nuclear Instruments and Methods in Physics Research.2002, B186:414-418
    【157】方健,蒋华平,乔明,张波,李肇基,局域寿命控制NPT-IGBTs稳态模型,半导体学报,2006,27(5):857-863
    【158】Siemieniec R, Lutz J. Possibilities and limits of axial lifetime control by radiation induced centers in fast re-covery diodes[J].Microelectronics Journal.2004,35:259-267
    【159】Hazdra P,Vobecky J,Dorschner H,et al. Axial life-time control in silicon power diodes by irradiation with protons,alphas,low-and high-energy electrons[J].Microelectronics Journal.2004, 35:249-257
    【160】谢书珊,超低漏电超快恢复二极管寿命控制新技术研究,北京工业大学,2006:5-12
    【161】Liu Jing, Gao Yong, Ma Li. Research on A Novel Structure of SiGeC/Si Heterojunction Power Diodes. IEEE International Power Electronics and Motion Control Conference, [C] 2006, Shanghai, China, Vol. 1 p88-91.
    【162】虞丽声,半导体异质结物理,科学出版社,2006:29-41
    【163】刘静,高勇,掺碳SiGe二极管反向阻断特性模拟与机理分析.电力电子技术,2008年,第12期
    【164】高勇,刘静,马丽,余明斌.SiGeC/Si功率二极管的数值模拟与分析.半导体学报,2006,Vol.27,No.6,p1068-1072
    【165】Fei Zhang, Lina Shi, Chengfang Li, Wen Yu and Xiaowei Sun. A high-power solid-state p+-n-n+ diode for picosecond-range closing switching. Simicond. Sci.Tichnol.2005, vol.20, p.991-997
    【166】刘静,高勇,王彩琳,马丽.SiGeC/Si异质结二极管特性分析与优化设计.固体电子学研究与进展,2008,Vol.12,No.4,p621-626
    【167】Zhang Y, Xiao Y, Lattice dynamics investigations of SiGe core-shell nanowires. EUROPEAN PHYSICAL JOURNAL B.2008, Vol.63, No.4, p425-430
    【168】Toko K, Kanno H, Kenjo A, et al. Low-temperature solid-phase crystallization of amorphous SiGe films on glass by imprint technique. SOLID-STATE ELECTRONICS.2008, Vol.52, No.8, p1221-1224.
    【169】J. S. Reih. et al. SiGe HBTs with cut-off frequency of 350GHz. Electron Devices Meeting, Technical Digest,2002:771-774.
    【170】Ping Li et al. Novel Power MOS Devices with SiGe/Si Hetero-junctions. IEEE, ISPSD 2000: 432-437.
    【171】Huang J, Kirsch PD, Oh J, et al. Mechanisms limiting EOT scaling and gate leakage currents of high-k/metal gate stacks directly on SiGe and a method to enable sub-1nm EOT. SYMPOSIUM ON VLSI TECHNOLOGY.2008, p63-64
    【172】Osten H J. MBE growth and properties of super-saturated, carbon-containing silicon/germanium alloy on Si (001). Thin Solid Films,2000, vol.367 (1/2):101-111.
    【173】Barbalat B, Schwartzmann T, Chevalier P, et al. The effect of carbon on neutral base recombination in high-speed SiGeC heterojunction bipolar transistors. SEMICONDUCTOR SCIENCE AND TECHNOLOGY.2007, Vol.22, No.1, pS99-S102.
    【174】Kim HW, Choi S, Hong S, et al. The effect of the C incorporation pathway on the growth rate of epitaxial SiGeC. JOURNAL OF THE KOREAN PHYSICAL SOCIETY.2007, Vol.50, No.3, p685-689
    【175】Kanzawa, Y.; Nozawa, K.; Saitoh, T.; Kubo, M., Dependence of substitutional C incorporation on Ge content for Si1-x-yGexCy crystals grown by ultrahigh vacuum chemical vapor deposition, Applied Physics Letters, v 77, n 24,2000, p 3962-3964
    【176】Kanzawa, Y.; Nozawa, K.; Saitoh, T.; Kubo, M., Infrared absorption spectra of C local mode in Si1-x-yGexCy crystals, Japanese Journal of Applied Physics, Part 2:Letters, v 40, n 6 B,2001, p L592-L595
    【177】Yuki, K.; Toyoda, K.; Takagi, T.; Kanzawa, Y.; Nozawa, K.; Saitoh, T.; Kubo, M., Bandgap and strain engineering in SiGeC heterojunction bipolar transistors, Japanese Journal of Applied Physics, Part 1:Regular Papers and Short Notes and Review Papers, v 40, n 4 B,2001, Solid State Devices and Materials, p 2633-2636
    【178】Nozawa, K.; Katayama, K.; Kanzawa, Y.; Sugahara, G.; Saitoh, T.; Kubo, M., Real-time spectroscopic ellipsometry study of the thermal cleaning process for silicon epitaxial growth by UHV-CVD, Materials Research Society Symposium-Proceedings, v 569,1999, p 83-88
    【179】Sakai, A.; Torige, Y.; Okada. M.; Ikeda, H.; Yasuda, Y.; Zaima, S., Atomistic evolution of Si1-x-yGexCy thin films on Si(001) surfaces, Applied Physics Letters, v 79, n 20, Nov 12,2001, p 3242
    【180】Suzumura, I.; Okada, M.; Muto, A.; Torige, Y.; Ikeda, H.; Sakai, A.; Zaima, S.; Yasuda, Y, Nucleation and growth of Ge on Si(111) in solid phase epitaxy, Thin Solid Films, v 369, n 1, Jul,2000, p 116-120
    【181】Mathioudakis, C.; Kopidakis, G.; Patsalas, P.; Kelires, P.C., Disorder and optical properties of amorphous carbon, Diamond and Related Materials, v 16, n 10, October,2007, Proceedings of the 6th Specialists Meeting in Amorphous Carbon, p 1788-1792
    【182】Fyta, M.G.; Remediakis, I.N.; Kelires, P.C.; Papaconstantopoulos, D.A., Insights into the fracture mechanisms and strength of amorphous and nanocomposite carbon, Physical Review Letters, v 96, n 18,2006,p 185503
    【183】Kelires, P.C., Simulations of nanocomposite carbon films, Reviews on Advanced Materials Science, v 15, n 1, September,2007, p 69-78
    【184】Fyta, M.G.; Mathioudakis, C.; Kopidakis, G.; Kelires, P.C., Structure, stability, and stress properties of amorphous and nanostructured carbon films, Thin Solid Films, v 482, n 1-2,2005, p 56-62
    【185】Fyta, M.G.; Kelires, P.C., Computer simulations of carbon nanostructures under pressure, Fullerenes Nanotubes and Carbon Nanostructures, v 13, n SUPPL.1,2005, p 13-20
    【186】Lombardo, S.; Larsen, K. Kyllesbech; Raineri, V.; La Via, F.; Campisano, S.U.; Lagomarsino, S.; Kazimirov, A., Characterization of C coimplanted GexSi1-x epitaxial layers formed by high dose Ge ion implantation in (100) Si, Journal of Applied Physics,1996, vol.79, no.7, p3456
    【187】Li, Y.; Cai, R., Velocity overshoot analysis in SiGe and SiGeC HBT, International Journal of Electronics,2007, v 94, n 6, p 563-571
    【188】Guillot, Farah; Garcia, Patrice; Mouis, Mireille; Belot, Didier, Analysis of the intermodulation distortion and nonlinearity of common-base SiGeC HBTs, IEEE International Conference on Electronics, Circuits and Systems,2006, p 664-667
    【189】Anteney, I.M.; Parker, G.J.; Ashburn, P.; Kemhadjian, H.A., Electrical properties of in situ phosphorus- and boron-doped polycrystalline SiGeC films, Applied Physics Letters,2000, vol.77, no.4,p561-563
    【190】Anteney, I.M.; Parker, G.J.; Ashburn, P.; Kemhadjian, H.A., The role of carbon on the electrical properties of polycrystalline Si1-yCy and Si0.82-yGe0.18Cy films, Journal of Applied Physics,2001, vol.90, no.12,p 6182
    【191】Avenier, Gregory; Fregone, Sebastien; Chevalier, Pascal; et al. Electrical behavior and technology optimization of Si/SiGeC HBTs on thin-film SOI, IEEE Transactions on Electron Devices,2008, vol.55, no.2, p 585-593
    【192】Morandini, Yvan; Jean-Francois, Larchanche; Gaquiere, Christophe, Evaluation of SiGeC HBT varactor using different collector access and base-collector junction configuration in BiCMOS technologies, IEEE Bipolar/BiCMOS Circuits and Technology Meeting,2007, p 246-249
    【193】Fantoni, A.; Fernandas, M.; Vygranenko, Y.; Vieira, M., Analysis and simulation of a-Si:H/a-SiC:H PINIP structures for color image detection, Physica Status Solidi (A) Applications and Materials,2008, vol.205, no.8, p 2069-2074
    【194】Levchuk, S.; Lindig, S.; Brendel, A.; Bolt, H., Interface reactions and control of diffusion at the interface between SiC fibres and layer of deposited Fe-9Cr base alloy, Journal of Nuclear Materials, 2007, vol.367-370 B, no.SPEC.ISS., p 1233-1237
    【195】Pressel, K.; Fischer, G.G.; Zaumseil, P.; Kim, M.; Osten, H.J. Infrared spectroscopy of strained Si1-yCy alloys (0<=y<=0.015) grown on silicon, Thin Solid Films,1997, Vol.294, nol.1-2, p 133-136
    【196】Akhmetov, V.; Kissinger, G.; Fischer, A.; Morgenstern, G.; Ritter, G.; Kittler, M., Radially non-uniform interaction of nitrogen with silicon wafers, Journal of Materials Science: Materials in Electronics,2008, vol.19, no.SUPPL.1, p S36-S40
    【197】Sha, J.J.; Hinoki, T.; Kohyama, A., Thermal and mechanical stabilities of Hi-Nicalon SiC fiber under annealing and creep in various oxygen partial pressures, Corrosion Science,2008, v50, n11, p 3132-3138
    【198】Park, Joon-Soo; Kohyama, Akira; Hinoki, Tatsuya; Shimoda, Kazuya; Park, Yi-Hyun, Efforts on large scale production of NITE-SiC/SiC composites, Journal of Nuclear Materials,2007, vol.367-370A, no.SPEC. ISS., p 719-724
    【199】Gao Yong, Liu Jing, Yang Yuan. Improvement of High Temperature Characteristics for SiGeC p-i-n Diodes with Carbon Incorporation. Chinese Physics Letters,2008, Vol.25, No.6, p2285-2288
    【200】M.Ahoujja, Y.K.Yeo and P.L.Hengehold. Electrical properties of boron-doped p- SiGeC grown on n--Si substrate. APPLIED PHYSICS LETTERS.2000, Vol.77(9):1327-1329.
    【201】Osten H J, Knoll D, Heinemann B, et al. Carbon Doped SiGe Heterojunction Bipolar Transistors for High Frequency Application. IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), Minneapolis USA,1999:109-116.
    【202】Miranda E, Compact modeling of the non-linear post-breakdown current in thin gate oxides using the generalized diode equation, MICROELECTRONICS RELIABILITY,2008, Vol.48(8-9): 1604-1607
    【203】维捷斯拉夫·本达,约翰·戈沃,邓肯A.格兰特著,功率半导体器件,化学工业出版社,2004:29-45
    【204】Jing Liu, Yong Gao, Yuan Yang. Research on SiGeC power diodes with fast and soft recovery. The 9th International Conference on Solid-State and Integrated-Circuit Technology,2008, Beijing, China, p180-130.
    【205】Liu Jing, Gao Yong, Yang Yuan, Wang Cailin. A Novel Ideal Ohmic Contact SiGeC/Si Power Diode with Gradual Changing Doping Concentration. Chinese Journal of Semiconductors,2007, Vol.28, No.3, p342-34
    【206】Vdovin V.I.; Torack T.A.; Fei Lu; Reznik V.Ya.; Mil'vidskii M.G.; Falster R., Formation of extended defects in SiGe/Si heterostructures with SiGeC intermediate layers, Solid State Physics, vol.4, no.8,,2007, p 3043-3047
    【207】Dutartre D.; Loubet N.; Brossard F.; Vandelle B.; Chevalier P.; Chantre A.; Monfray S.; Fenouillet-Beranger C.; Pouydebasque A.; Skotnicki T., Si/SiGe epitaxy:A ubiquitous process for advanced electronics, IEEE International Electron Devices Meeting, IEDM,2007, p 689-692
    【208】Duvernay Julien; Borot Gael; Chevalier Pascal; Dutartre Didier; Pantel Roland; Rubaldo Laurent; Schwartzmann Thierry; Vandelle Benoit; Chantre Alain, An experimental and simulation study of pnp Si/SiGeC HBTs using box-like Ge profiles,37th European Solid State Device Research Conference, 2008, p 346-349
    【209】Hallstedt J.; Parent A.; Zhang S.-L.; Ostling M.; Radamson H.H.; Strain and electrical characterization of boron-doped SiGeC layers grown by chemical vapor deposition, the 20th Nordic Semiconductor Meeting (NSM20),2004, p31-33
    【210】Deng Yongzhen; Kong Yuechan; Jiang Ning; Zheng Youdou; Zhu Shunmin; Han Ping; Shi Yi; Zhang Rong; Study on the strain in SiGeC alloy films grown on Si substrate by CVD, Research and Progress of Solid State Electronics, vol.25, no.4,2005, p 442-444
    【211】Laveant, P.; Werner, P.; Gerth, G.; Gosele, U.; Incorporation, diffusion and agglomeration of carbon in silicon Diffusion and Defect Data Pt.B:Solid State Phenomena, vol.82-84,2002, p 189-194
    【212】B. Jayant Baliga, Modern Power Devices, Wiley, New York, PWS Publication,1996, p414-419.
    【213】张海涛,张斌.新型大功率快速软恢复功率二极管:SIOD.半导体技术,1998,Vol.2,No23,p30-337.
    【214】郭林,李开成,张静等,Si1-xGex/Si多层异质结外延结构的研究,微电子学,2000,Vol.30(4):217-220.
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