Integration of InGaP/GaAs/Ge triple-junction solar cells on deeply patterned silicon substrates

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• 作者：Andrea Scaccabarozzi ; Simona Binetti ; Maurizio Acciarri ; Giovanni Isella ; Roberta Campesato ; Gabriele Gori ; Maria Cristina Casale ; Fulvio Mancarella ; Michael Noack ; Hans von Kä ; nel and Leo Miglio
• 刊名：Progress in Photovoltaics: Research and Applications
• 出版年：2016
• 出版时间：October 2016
• 年：2016
• 卷：24
• 期：10
• 页码：1368-1377
• 全文大小：655K
• ISSN：1099-159X

文摘

We report preliminary results on InGaP/InGaAs/Ge photovoltaic cells for concentrated terrestrial applications, monolithically integrated on engineered Si(001) substrates. Cells deposited on planar Ge/Si(001) epilayers, grown by plasma-enhanced chemical vapor deposition, provide good efficiency and spectral response, despite the small thickness of the Ge epilayers and a threading dislocation density as large as 10⁷/cm². The presence of microcracks generated by the thermal misfit is compensated by a dense collection grid that avoids insulated areas. In order to avoid the excessive shadowing introduced by the use of a dense grid, the crack density needs to be lowered. Here, we show that deep patterning of the Si substrate in blocks can be an option, provided that a continuous Ge layer is formed at the top, and it is suitably planarized before the metalorganic chemical vapor deposition. The crack density is effectively decreased, despite that the efficiency is also lowered with respect to unpatterned devices. The reasons of this efficiency reduction are discussed, and a strategy for improvement is proposed and explored. Full morphological analysis of the coalesced Ge blocks is reported, and the final devices are tested under concentrated AM1.5D spectrum. Copyright